Skip to main content
Erschienen in: Journal of Electroceramics 1-4/2011

01.06.2011

High-temperature piezoelectric crystals and devices

verfasst von: Holger Fritze

Erschienen in: Journal of Electroceramics | Ausgabe 1-4/2011

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Conventional piezoelectric materials such as quartz are widely used as high precision transducers and sensors based on bulk acoustic waves. However, their operation temperature is limited by the intrinsic materials properties to about 500°C. High-temperature applications are feasible by applying materials that retain their piezoelectric properties up to higher temperatures. Here, langasite (La3Ga5SiO14) and compounds of the langasite family are the most promising candidates, since they are shown to exhibit bulk acoustic waves up to at least 1400°C. The mass sensitivity of langasite resonators at elevated temperatures is about as high as that of quartz at room temperature. Factors limiting potential use of those crystals include excessive conductive and viscous losses, deviations from stoichiometry and chemical instability. Therefore, the objective of this work is to identify the related microscopic mechanisms, to correlate electromechanical properties and defect chemistry and to improve the stability of the materials by e.g. appropriate dopants. Further application examples such as resonant gas sensors are given to demonstrate the capabilities of high-temperature stable piezoelectric materials. The electromechanical properties of langasite are determined and described by a one-dimensional physical model. Key properties relevant for stable operation of resonators are found to be shear modulus, density, electrical conductivity and effective viscosity. In order to quantify their impact on frequency and damping, a generalized Sauerbrey equation is given. Mass and charge transport in single crystalline langasite are correlated with langasite’s defect chemistry and electromechanical properties. First of all, the dominant charge carriers are identified. Undoped langasite shows predominant ionic conduction at elevated temperatures. As long as the atmosphere is nearly hydrogen-free, the transport is governed by oxygen movement. A dominant role of hydrogen is observed in hydrogenous atmospheres since the diffusion coefficient of hydrogen is orders of magnitude higher than that of oxygen. The loss in langasite is found to be governed up to about 650°C by viscoelastic damping related to the above mentioned movement of oxygen ions. Donor doping is shown to lower the loss contribution. Above 650°C the impact of the conductivity related loss becomes pronounced. Here, lowering the conductivity results generally in decreased losses. The evaluation of langasite’s applicability is focused on mapping the regimes of gas insensitive operation. The most relevant feature with respect to frequency fluctuations of resonator devices is the formation of oxygen vacancies. In nominally hydrogen free atmospheres the calculated frequency shift becomes pronounced below oxygen partial pressures of 10 − 17, 10 − 24 and 10 − 36 bar at 1000, 800 and 600°C, respectively. Water vapor is found to shift the resonance frequency at higher oxygen partial pressures. In the hydrogen containing atmospheres applied here, langasite can be regarded as a stable resonator material above 10 − 13 bar and 10 − 20 bar at 800 and 600°C, respectively. The incorporation of OH-groups determines the frequency shift.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Anhänge
Nur mit Berechtigung zugänglich
Fußnoten
1
The crystal cut designation follows [51].
 
2
In [57] the electromechanical coupling K 2 = ε 2/(ec) is considered instead of ε.
 
3
The situation is comparable to platinum electrodes applied here since their density is similar.
 
4
The property σ B reflects the bulk conductivity of polycrystalline or single crystalline langasite. In the latter case σ B equals σ R .
 
5
The amount of dopant is always given as molecular percentage of the target cation site. Strontium and praseodymium dopants refer to lanthanum. Niobium dopants are given with respect to gallium.
 
6
At 800°C the curves for p O2 = 1 and 10 − 10 bar are almost identical. At 800°C and \(p_{O2} = 10^{-20}\) bar the branch for \([A_C']-[D_C^\bullet]<0\) is not shown in order to avoid confusion because of overlapping curves. It is a nearly horizontal line at \(\sigma_B \approx 6\times 10^{-3}\) S/m.
 
7
The subscript of η R is skipped in this section.
 
8
In both publications, the inverse resonator quality factor is used to describe the loss.
 
9
The alignment of the left and right hand axis is done for data points in temperature range (2) where the viscosity dominates the loss solely (see also Fig. 37).
 
Literatur
1.
Zurück zum Zitat M. Pereira da Cunha, R.J. Lad, T. Moonlight, G. Bernhardt, D.J. Frankel, in High Temperature Stability of Langasite Surface Acoustic Wave Devices. Proc. IEEE Int. Ultras. Symp. (2008), pp. 205–208 M. Pereira da Cunha, R.J. Lad, T. Moonlight, G. Bernhardt, D.J. Frankel, in High Temperature Stability of Langasite Surface Acoustic Wave Devices. Proc. IEEE Int. Ultras. Symp. (2008), pp. 205–208
2.
Zurück zum Zitat I. Shrena, D. Eisele, E. Mayer, L.M. Reindl, J. Bardong, M. Schmitt, SAW-Relevant Material Properties of Langasite in the Temperature Range from 25 to 750°C: New Experimental Results. Proc. IEEE Int. Ultras. Symp. (2008), pp. 209–212 I. Shrena, D. Eisele, E. Mayer, L.M. Reindl, J. Bardong, M. Schmitt, SAW-Relevant Material Properties of Langasite in the Temperature Range from 25 to 750°C: New Experimental Results. Proc. IEEE Int. Ultras. Symp. (2008), pp. 209–212
3.
Zurück zum Zitat H. Fritze, High-temperature bulk acoustic wave sensors. Meas. Sci. Technol. 22, 12002 (2011). 28 pp H. Fritze, High-temperature bulk acoustic wave sensors. Meas. Sci. Technol. 22, 12002 (2011). 28 pp
4.
Zurück zum Zitat O. Knacke, O. Kubaschewski, H. Hesselmann, Thermochemical Properties of Inorganic Substances (Springer, New York, 1991) O. Knacke, O. Kubaschewski, H. Hesselmann, Thermochemical Properties of Inorganic Substances (Springer, New York, 1991)
5.
Zurück zum Zitat R.W. Cernosek, J.R. Bigbie, M.T. Anderson, J.H. Small, P.S. Sawyer, in High Temperature Hydrocarbon Gas Sensing with Mesoporous SiO 2 Thin Films on TSM Resonators. Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, 8–11 November 1998 R.W. Cernosek, J.R. Bigbie, M.T. Anderson, J.H. Small, P.S. Sawyer, in High Temperature Hydrocarbon Gas Sensing with Mesoporous SiO 2 Thin Films on TSM Resonators. Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, 8–11 November 1998
6.
Zurück zum Zitat D. Damjanovic, Materials for high temperature piezoelectric transducers. Curr. Opin. Solid State Mater. Sci. 3, 469–473 (1998)CrossRef D. Damjanovic, Materials for high temperature piezoelectric transducers. Curr. Opin. Solid State Mater. Sci. 3, 469–473 (1998)CrossRef
7.
Zurück zum Zitat L. Reindl, G. Scholl, T. Ostertag, H. Scherr, U. Wolff, F. Schmidt, Theory and application of passive SAW radio transponder as sensors. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 45, 1281–1292 (1998)CrossRef L. Reindl, G. Scholl, T. Ostertag, H. Scherr, U. Wolff, F. Schmidt, Theory and application of passive SAW radio transponder as sensors. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 45, 1281–1292 (1998)CrossRef
8.
Zurück zum Zitat R. Fachberger, G. Bruckner, G. Knoll, R. Hauser, J. Biniasch, L. Reindl, Applicability of LiNbO3, langasite and GaPO4 in high temperature SAW sensors operating at radio frequencies. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51(11), 1427–1431 (2004)CrossRef R. Fachberger, G. Bruckner, G. Knoll, R. Hauser, J. Biniasch, L. Reindl, Applicability of LiNbO3, langasite and GaPO4 in high temperature SAW sensors operating at radio frequencies. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51(11), 1427–1431 (2004)CrossRef
9.
Zurück zum Zitat D.P. Birnie III, Analysis of diffusion in lithium niobate. J. Mater. Sci. 28, 302–315 (1993)CrossRef D.P. Birnie III, Analysis of diffusion in lithium niobate. J. Mater. Sci. 28, 302–315 (1993)CrossRef
10.
Zurück zum Zitat M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, Z. Sitar, The growth and optical properties of large, high-quality AlN single crystals. J. Appl. Phys. 6, 5870–5876 (2004)CrossRef M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, Z. Sitar, The growth and optical properties of large, high-quality AlN single crystals. J. Appl. Phys. 6, 5870–5876 (2004)CrossRef
11.
Zurück zum Zitat A.D. Katnani, K.I. Papathomas, Kinetics and initial stages of oxidation of aluminum nitride: thermogravimetric analysis and x-ray photoelectron spectroscopy study. J. Vac. Sci. Technol. A5, 1335–1340 (1987) A.D. Katnani, K.I. Papathomas, Kinetics and initial stages of oxidation of aluminum nitride: thermogravimetric analysis and x-ray photoelectron spectroscopy study. J. Vac. Sci. Technol. A5, 1335–1340 (1987)
12.
Zurück zum Zitat A. Bellosi, E. Landi, A. Tampieri, Oxidation behavior of aluminum nitride. J. Mater. Res. 8, 565–572 (1993)CrossRef A. Bellosi, E. Landi, A. Tampieri, Oxidation behavior of aluminum nitride. J. Mater. Res. 8, 565–572 (1993)CrossRef
13.
Zurück zum Zitat O. Ambacher, M.S. Brandt, R. Dimitrov, R.A. Fischer, A. Miehr, T. Metzger, M. Stutzmann, Thermal stability and desorption of group III nitrides prepared by MOCVD. J. Vac. Sci. Technol. 14, 3532–3542 (1996)CrossRef O. Ambacher, M.S. Brandt, R. Dimitrov, R.A. Fischer, A. Miehr, T. Metzger, M. Stutzmann, Thermal stability and desorption of group III nitrides prepared by MOCVD. J. Vac. Sci. Technol. 14, 3532–3542 (1996)CrossRef
14.
Zurück zum Zitat K. Shimamura, H. Takeda, T. Kohno, T. Fukuda, Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications. J. Cryst. Growth 163, 388–392 (1996)CrossRef K. Shimamura, H. Takeda, T. Kohno, T. Fukuda, Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications. J. Cryst. Growth 163, 388–392 (1996)CrossRef
15.
Zurück zum Zitat B. Chai, J.L. Lefaucheur, Y.Y. Ji, H. Qiu, in Growth and Evaluation of Large Size LGS (La 3 Ga 5 SiO 14), LGN (La 3 Ga 5,5 Nb 0,5 O 14) and LGT (La 3 Ga 5,5 Ta 0,5 O 14) Single Crystals. IEEE Int. Freq. Contr. Symp. (1998), pp. 748–760 B. Chai, J.L. Lefaucheur, Y.Y. Ji, H. Qiu, in Growth and Evaluation of Large Size LGS (La 3 Ga 5 SiO 14), LGN (La 3 Ga 5,5 Nb 0,5 O 14) and LGT (La 3 Ga 5,5 Ta 0,5 O 14) Single Crystals. IEEE Int. Freq. Contr. Symp. (1998), pp. 748–760
16.
Zurück zum Zitat P.W. Krempl, Quartzhomeotypic gallium orthophosphate: a new high tech piezoelectric crystal. Ferroelectrics 202, 65–69 (1997)CrossRef P.W. Krempl, Quartzhomeotypic gallium orthophosphate: a new high tech piezoelectric crystal. Ferroelectrics 202, 65–69 (1997)CrossRef
17.
Zurück zum Zitat K. Jacobs, P. Hofmann, D. Klimm, J. Reichow, M. Schneider, Structural phase transformations in crystalline gallium orthophosphate. J. Solid State Chem. 149, 180–188 (2000)CrossRef K. Jacobs, P. Hofmann, D. Klimm, J. Reichow, M. Schneider, Structural phase transformations in crystalline gallium orthophosphate. J. Solid State Chem. 149, 180–188 (2000)CrossRef
18.
Zurück zum Zitat F. Krispel, C. Reiter, J. Neubig, F. Lenzenhuber, P.W. Krempl, W. Wallnöfer, P.M. Worsch, in Properties and Applications of Singly Rotated GaPO 4 Resonators. IEEE Int. Freq. Contr. Symp. (2003), pp. 668–673 F. Krispel, C. Reiter, J. Neubig, F. Lenzenhuber, P.W. Krempl, W. Wallnöfer, P.M. Worsch, in Properties and Applications of Singly Rotated GaPO 4 Resonators. IEEE Int. Freq. Contr. Symp. (2003), pp. 668–673
19.
Zurück zum Zitat S. Uda, S.Q. Wang, N. Konishi, H. Inaba, J. Harada, Growth habits of 3 and 4-inch langasite single crystals. J. Cryst. Growth 237–239, 707–713 (2002)CrossRef S. Uda, S.Q. Wang, N. Konishi, H. Inaba, J. Harada, Growth habits of 3 and 4-inch langasite single crystals. J. Cryst. Growth 237–239, 707–713 (2002)CrossRef
20.
Zurück zum Zitat P. Krempl, G. Schleinzer, W. Wallnöfer, Gallium phosphate, GaPO4: a new piezoelectric crystal material for high-temperature sensorics. Sens. Actuators, A 61, 361–363 (1997)CrossRef P. Krempl, G. Schleinzer, W. Wallnöfer, Gallium phosphate, GaPO4: a new piezoelectric crystal material for high-temperature sensorics. Sens. Actuators, A 61, 361–363 (1997)CrossRef
21.
Zurück zum Zitat F. Krispel, H. Thanner, P. Krempl, C. Reiter, P. Worsch, W. Wallnof̈er, in GaP0 4 Resonators With Q Factors of Some Millions in the Fundamental Mode. IEEE International Frequency Control Symposium (2002), pp. 342–346 F. Krispel, H. Thanner, P. Krempl, C. Reiter, P. Worsch, W. Wallnof̈er, in GaP0 4 Resonators With Q Factors of Some Millions in the Fundamental Mode. IEEE International Frequency Control Symposium (2002), pp. 342–346
22.
Zurück zum Zitat H. Fritze, O. Schneider, G. Borchardt, in High Temperature Bulk Acoustic Wave Properties of Gallium Orthophosphate and Langasite, Sensor 2003 Proceedings, (AMA Service GmbH) (2003) H. Fritze, O. Schneider, G. Borchardt, in High Temperature Bulk Acoustic Wave Properties of Gallium Orthophosphate and Langasite, Sensor 2003 Proceedings, (AMA Service GmbH) (2003)
23.
Zurück zum Zitat K. Jacobs, P. Hofmann, D. Klimm, OH impurities in GaPO4 crystals: correlation between infrared absorption and mass loss during thermal treatment. J. Cryst. Growth 237–239, 837–842 (2002)CrossRef K. Jacobs, P. Hofmann, D. Klimm, OH impurities in GaPO4 crystals: correlation between infrared absorption and mass loss during thermal treatment. J. Cryst. Growth 237–239, 837–842 (2002)CrossRef
24.
Zurück zum Zitat R.-U. Barz, M. Grassl, P. Gille, Study of anisotropic effects in hydrothermal growth of gallium orthophosphate single crystals. Ann. Chim. Sci. Mat. 26, 95–98 (2001)CrossRef R.-U. Barz, M. Grassl, P. Gille, Study of anisotropic effects in hydrothermal growth of gallium orthophosphate single crystals. Ann. Chim. Sci. Mat. 26, 95–98 (2001)CrossRef
25.
Zurück zum Zitat K. Jacobs, P. Hofmann, J. Reichow, Physico-chemical aspects of the hydrothermal growth of GaPO4. Ann. Chim. Sci. Mat. 26, 85–90 (2001)CrossRef K. Jacobs, P. Hofmann, J. Reichow, Physico-chemical aspects of the hydrothermal growth of GaPO4. Ann. Chim. Sci. Mat. 26, 85–90 (2001)CrossRef
26.
Zurück zum Zitat O. Cambon, P. Yot, D. Balitsky, A. Goiffon, E. Philippot, B. Capelle, J. Detaint, Crystal growth of GaPO4, a very promising material for manufacturing BAW devices. Ann. Chim. Sci. Mat. 26, 79–84 (2001)CrossRef O. Cambon, P. Yot, D. Balitsky, A. Goiffon, E. Philippot, B. Capelle, J. Detaint, Crystal growth of GaPO4, a very promising material for manufacturing BAW devices. Ann. Chim. Sci. Mat. 26, 79–84 (2001)CrossRef
27.
Zurück zum Zitat S. Zhang, Y. Fei, B.H.T. Chai, E. Frantz, D.W. Snyder, X. Jiang, T.R. Shrout, Characterization of piezoelectric single crystal YCa4O(BO3)3 for high temperature applications. Appl. Phys. Lett. 92, 202905 (2008)CrossRef S. Zhang, Y. Fei, B.H.T. Chai, E. Frantz, D.W. Snyder, X. Jiang, T.R. Shrout, Characterization of piezoelectric single crystal YCa4O(BO3)3 for high temperature applications. Appl. Phys. Lett. 92, 202905 (2008)CrossRef
28.
Zurück zum Zitat S. Zhang, E. Frantz, R. Xia, W. Everson, J. Randi, D.W. Snyder, T.R. Shrout, Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (>1000°C) applications. J. Appl. Phys. 104, 084103 (2008)CrossRef S. Zhang, E. Frantz, R. Xia, W. Everson, J. Randi, D.W. Snyder, T.R. Shrout, Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (>1000°C) applications. J. Appl. Phys. 104, 084103 (2008)CrossRef
29.
Zurück zum Zitat F. Yu, S. Zhang, X. Zhao, D. Yuan, Q. Wang, T.R. Shrout, High temperature piezoelectric properties of yttrium calcium oxyborate single crystals. Phys. Status Solidi - RRL 4, 103–105 (2010)CrossRef F. Yu, S. Zhang, X. Zhao, D. Yuan, Q. Wang, T.R. Shrout, High temperature piezoelectric properties of yttrium calcium oxyborate single crystals. Phys. Status Solidi - RRL 4, 103–105 (2010)CrossRef
30.
Zurück zum Zitat D. Cachau-Herreillat, J. Bennazha, A. Goiffon, A. Ibanez, E. Philippot, X-ray, DTA and crystal growth investigation on AlPO4-GaPO4 and AlPO4-AlAsO4 systems. Eur. J. Solid State Inorg. Chem. 29, 1295–1307 (1992) D. Cachau-Herreillat, J. Bennazha, A. Goiffon, A. Ibanez, E. Philippot, X-ray, DTA and crystal growth investigation on AlPO4-GaPO4 and AlPO4-AlAsO4 systems. Eur. J. Solid State Inorg. Chem. 29, 1295–1307 (1992)
31.
Zurück zum Zitat H. Fritze, High temperature piezoelectric materials: Defect chemistry and electro-mechanical properties. J. Electroceramics 17, 625–630 (2006)CrossRef H. Fritze, High temperature piezoelectric materials: Defect chemistry and electro-mechanical properties. J. Electroceramics 17, 625–630 (2006)CrossRef
32.
Zurück zum Zitat J. Sauerwald, H. Fritze, E. Ansorge, S. Schimpf, S. Hirsch, B. Schmidt, in Electromechanical Properties of Langasite Structures at High Temperatures. International Workshop on Integrated Electroceramic Functional Structures, Berchtesgaden, Germany, 6–8 June 2005 J. Sauerwald, H. Fritze, E. Ansorge, S. Schimpf, S. Hirsch, B. Schmidt, in Electromechanical Properties of Langasite Structures at High Temperatures. International Workshop on Integrated Electroceramic Functional Structures, Berchtesgaden, Germany, 6–8 June 2005
33.
Zurück zum Zitat B.V. Mill, Y.V. Pisarevsky, in Langasite-type Materials: From Dicovery to Present State. Proc. IEEE/EIA Int. Freq. Control Symp. (2000), pp. 133–144. B.V. Mill, Y.V. Pisarevsky, in Langasite-type Materials: From Dicovery to Present State. Proc. IEEE/EIA Int. Freq. Control Symp. (2000), pp. 133–144.
34.
Zurück zum Zitat A.N. Gotalskaya, D.I. Drezin, V.V. Bezdelkin, V.N. Stassevich, in Pecularities of Technology, Physical Properties and Applications of New Piezoelectric Material Langasite (La 3 Ga 5 SiO 14). IEEE Int. Freq. Contr. Symp. (1993), pp. 339–347. A.N. Gotalskaya, D.I. Drezin, V.V. Bezdelkin, V.N. Stassevich, in Pecularities of Technology, Physical Properties and Applications of New Piezoelectric Material Langasite (La 3 Ga 5 SiO 14). IEEE Int. Freq. Contr. Symp. (1993), pp. 339–347.
35.
Zurück zum Zitat J. Bohm, E. Chilla, C. Flannery, H.-J. Fröhlich, T. Hauke, R. Heimann, M. Hengst, U. Straube, Czochralski growth and characterization of piezoelectric single crystals with langasite structure: LGS, LGN and LGT. Part II: Piezoelectric and elastic properties. J. Cryst. Growth 216, 293–298 (2000)CrossRef J. Bohm, E. Chilla, C. Flannery, H.-J. Fröhlich, T. Hauke, R. Heimann, M. Hengst, U. Straube, Czochralski growth and characterization of piezoelectric single crystals with langasite structure: LGS, LGN and LGT. Part II: Piezoelectric and elastic properties. J. Cryst. Growth 216, 293–298 (2000)CrossRef
36.
Zurück zum Zitat J. Boy, R. Besson, E. Bigler, R. Bourquin, B. Dulmet, in Theoretical and Experimental Studies of the Force-Frequency Effect in BAW LGS and LGT Resonators. IEEE Int. Freq. Contr. Symp. (2001), pp. 223–226 J. Boy, R. Besson, E. Bigler, R. Bourquin, B. Dulmet, in Theoretical and Experimental Studies of the Force-Frequency Effect in BAW LGS and LGT Resonators. IEEE Int. Freq. Contr. Symp. (2001), pp. 223–226
37.
Zurück zum Zitat S. Ganschow, C. Cavalloni, P. Reiche, R. Uecker, Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application. Proc. SPIE 2373, 55–58 (1995)CrossRef S. Ganschow, C. Cavalloni, P. Reiche, R. Uecker, Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application. Proc. SPIE 2373, 55–58 (1995)CrossRef
38.
Zurück zum Zitat H. Takeda, S. Tanaka, S. Izukawa, H. Shimizu, T. Nishida, T. Shiosaki, in Effective Substitution of Aluminum for Gallium in Langasite-type Crystals for A Pressure Sensor Use at High Temperature. IEEE Ultras. Symp. (2005), pp. 560–563 H. Takeda, S. Tanaka, S. Izukawa, H. Shimizu, T. Nishida, T. Shiosaki, in Effective Substitution of Aluminum for Gallium in Langasite-type Crystals for A Pressure Sensor Use at High Temperature. IEEE Ultras. Symp. (2005), pp. 560–563
39.
Zurück zum Zitat E.N. Domoroshchina, A.B. Dubovskii, G.M. Kuz’micheva, G.V. Semenkovich, Influence of point defects on the electrical conductivity and dielectric properties of langasite. Inorg. Mater. 41, 1378–1381 (2005)CrossRef E.N. Domoroshchina, A.B. Dubovskii, G.M. Kuz’micheva, G.V. Semenkovich, Influence of point defects on the electrical conductivity and dielectric properties of langasite. Inorg. Mater. 41, 1378–1381 (2005)CrossRef
40.
Zurück zum Zitat H. Fritze, H.L. Tuller, G. Borchardt, T. Fukuda, High temperature properties of langasite. Mater. Res. Soc. Symp. Proc. 604, 65–70 (2000)CrossRef H. Fritze, H.L. Tuller, G. Borchardt, T. Fukuda, High temperature properties of langasite. Mater. Res. Soc. Symp. Proc. 604, 65–70 (2000)CrossRef
41.
Zurück zum Zitat H. Fritze, H.L. Tuller, Langasite for high temperature bulk acoustic wave applications. Appl. Phys. Lett. 78, 976–977 (2001)CrossRef H. Fritze, H.L. Tuller, Langasite for high temperature bulk acoustic wave applications. Appl. Phys. Lett. 78, 976–977 (2001)CrossRef
42.
Zurück zum Zitat H. Fritze, H. Seh, H.L. Tuller, G. Borchardt, Operation limits of langasite high temperature nanobalances. J. Eur. Ceram. Soc. 21, 1473–1477 (2001)CrossRef H. Fritze, H. Seh, H.L. Tuller, G. Borchardt, Operation limits of langasite high temperature nanobalances. J. Eur. Ceram. Soc. 21, 1473–1477 (2001)CrossRef
43.
Zurück zum Zitat J. Stade, L. Bohaty, M. Hengst, R.B. Heimann, Electro-optic, piezoelectric and dielectric properties of langasite (La3Ga5SiO14), langanite (La3Ga5.5Nb0.5O14) and langataite (La3Ga5.5Ta0.5O14). Cryst. Res. Technol. 37, 1113–1120 (2002)CrossRef J. Stade, L. Bohaty, M. Hengst, R.B. Heimann, Electro-optic, piezoelectric and dielectric properties of langasite (La3Ga5SiO14), langanite (La3Ga5.5Nb0.5O14) and langataite (La3Ga5.5Ta0.5O14). Cryst. Res. Technol. 37, 1113–1120 (2002)CrossRef
44.
Zurück zum Zitat D.R. Lide (ed.), CRC Handbook of Chemistry and Physics, 84th edn. (CRC Press, Boca Raton, 2003) D.R. Lide (ed.), CRC Handbook of Chemistry and Physics, 84th edn. (CRC Press, Boca Raton, 2003)
45.
Zurück zum Zitat C. Klemenz, M. Berkowski, B. Deveaud-Pledran, D.C. Malocha, in Defect Structure of Langasite-type Crystals: A Challange for Applications. IEEE Int. Freq. Contr. Symp. (2002), pp. 301–306 C. Klemenz, M. Berkowski, B. Deveaud-Pledran, D.C. Malocha, in Defect Structure of Langasite-type Crystals: A Challange for Applications. IEEE Int. Freq. Contr. Symp. (2002), pp. 301–306
46.
Zurück zum Zitat R. Fachberger, E. Riha, E. Born, W. Ruile, P. Pongratz, S. Kronholz, in Homogeneity of Langasite and Langatate Wafers. IEEE Int. Freq. Contr. Symp. (2002), pp. 311–319 R. Fachberger, E. Riha, E. Born, W. Ruile, P. Pongratz, S. Kronholz, in Homogeneity of Langasite and Langatate Wafers. IEEE Int. Freq. Contr. Symp. (2002), pp. 311–319
47.
Zurück zum Zitat G.M. Kuz’micheva, V.B. Rybakov, E.N. Domoroshchina, A.B. Dubovskii, X-ray diffraction study of an inhomogeneous langasite (La3Ga5SiO14) crystal. Inorg. Mater. 38, 1040–1047 (2002)CrossRef G.M. Kuz’micheva, V.B. Rybakov, E.N. Domoroshchina, A.B. Dubovskii, X-ray diffraction study of an inhomogeneous langasite (La3Ga5SiO14) crystal. Inorg. Mater. 38, 1040–1047 (2002)CrossRef
48.
Zurück zum Zitat G. Sauerbrey, Verwendung von Schwingquarzen zur Wägung dünner Schichten und zur Mikrowägung. Z. Phys. 155, 206–222 (1959)CrossRef G. Sauerbrey, Verwendung von Schwingquarzen zur Wägung dünner Schichten und zur Mikrowägung. Z. Phys. 155, 206–222 (1959)CrossRef
49.
Zurück zum Zitat E. Benes, Improved quartz microbalance technique. J. Appl. Phys. 56, 608–626 (1984)CrossRef E. Benes, Improved quartz microbalance technique. J. Appl. Phys. 56, 608–626 (1984)CrossRef
50.
Zurück zum Zitat S.S. Narine, A.J. Slavin, Use of the quartz crystal microbalance to measure the mass of submonolayer deposits: Measuring the stoichiometry of surface oxides. J. Vac. Sci. Technol. A16, 1857–1862 (1998) S.S. Narine, A.J. Slavin, Use of the quartz crystal microbalance to measure the mass of submonolayer deposits: Measuring the stoichiometry of surface oxides. J. Vac. Sci. Technol. A16, 1857–1862 (1998)
51.
Zurück zum Zitat IEEE Standard on Piezoelectricity, ANSI/IEEE Std. 176-1987 (The Institute of Electrical and Electronic Engineers, New York, 1988) IEEE Standard on Piezoelectricity, ANSI/IEEE Std. 176-1987 (The Institute of Electrical and Electronic Engineers, New York, 1988)
52.
Zurück zum Zitat D.A. Berlincourt, D. Curran, H. Jaffe, in Physical Acoustics, Principles and Methods. Piezoelectric and Piezomagnetic Materials and their Function in Transducers, vol. 1, part A. (Academic, New York, 1964), Ch. 3, pp. 169–270 D.A. Berlincourt, D. Curran, H. Jaffe, in Physical Acoustics, Principles and Methods. Piezoelectric and Piezomagnetic Materials and their Function in Transducers, vol. 1, part A. (Academic, New York, 1964), Ch. 3, pp. 169–270
53.
Zurück zum Zitat T. Ikeda, Fundamentals of Piezoelectricity (Oxford University Press, Oxford, 1990) T. Ikeda, Fundamentals of Piezoelectricity (Oxford University Press, Oxford, 1990)
55.
Zurück zum Zitat D. Salt, Hy-Q Handbook of Quartz Crystal Devices (Van Nostrand Reinhold, Wokingham, 1987) D. Salt, Hy-Q Handbook of Quartz Crystal Devices (Van Nostrand Reinhold, Wokingham, 1987)
56.
Zurück zum Zitat B. Zimmermann, R. Lucklum, P. Hauptmann, J. Rabe, S. Büttgenbach, Electrical characterisation of high-frequency thickness shear-mode resonators by impedance analysis. Sens. Actuators, B 76, 47–57 (2001)CrossRef B. Zimmermann, R. Lucklum, P. Hauptmann, J. Rabe, S. Büttgenbach, Electrical characterisation of high-frequency thickness shear-mode resonators by impedance analysis. Sens. Actuators, B 76, 47–57 (2001)CrossRef
57.
Zurück zum Zitat K.W. Kwok, H.L.W. Chan, C.L. Choy, Evaluation of the material parameters of piezoelectric materials by various methods. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44(4), 733–742 (1997)CrossRef K.W. Kwok, H.L.W. Chan, C.L. Choy, Evaluation of the material parameters of piezoelectric materials by various methods. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44(4), 733–742 (1997)CrossRef
58.
Zurück zum Zitat J.G. Smith, Influence of moving domain walls and jumping lattice defects on complex material coefficients of piezoelectrics. IEEE Trans. Sonics Ultrason. SU-23(3), 168–174 (1976) J.G. Smith, Influence of moving domain walls and jumping lattice defects on complex material coefficients of piezoelectrics. IEEE Trans. Sonics Ultrason. SU-23(3), 168–174 (1976)
59.
Zurück zum Zitat G. Arlt, The role of domain walls on the dielectric, elastic and piezoelectric properties of ferroelectric ceramics. Ferroelectrics 76, 451–458 (1987)CrossRef G. Arlt, The role of domain walls on the dielectric, elastic and piezoelectric properties of ferroelectric ceramics. Ferroelectrics 76, 451–458 (1987)CrossRef
60.
Zurück zum Zitat W. Göpel, J. Hesse, J.N. Zehmel, Sensors, a comprehensive survey, vol. 7 (VCH, Weinheim, 1994) W. Göpel, J. Hesse, J.N. Zehmel, Sensors, a comprehensive survey, vol. 7 (VCH, Weinheim, 1994)
61.
Zurück zum Zitat H.F. Tiersten, Linear Piezoelectric Plate Vibration (Plenum, New York, 1969) H.F. Tiersten, Linear Piezoelectric Plate Vibration (Plenum, New York, 1969)
62.
Zurück zum Zitat H. Fritze, M. Schulz, H. Seh, H.L. Tuller, Sensor application-related defect chemistry and electromechanical properties of langasite. Solid State Ion. 177, 2313–2316 (2006)CrossRef H. Fritze, M. Schulz, H. Seh, H.L. Tuller, Sensor application-related defect chemistry and electromechanical properties of langasite. Solid State Ion. 177, 2313–2316 (2006)CrossRef
63.
Zurück zum Zitat B.A. Martin, H.E. Hager, Velocity profile on quartz crystals oscillating in liquids. J. Appl. Phys. 65, 2630–2635 (1989)CrossRef B.A. Martin, H.E. Hager, Velocity profile on quartz crystals oscillating in liquids. J. Appl. Phys. 65, 2630–2635 (1989)CrossRef
64.
Zurück zum Zitat G. Sauerbrey, Messung von Plattenschwingungen sehr kleiner Amplitude durch Lichtmodulation. Z. Phys. 178, 457–471 (1964)CrossRef G. Sauerbrey, Messung von Plattenschwingungen sehr kleiner Amplitude durch Lichtmodulation. Z. Phys. 178, 457–471 (1964)CrossRef
65.
Zurück zum Zitat J. Schreuer, J. Rupp, C. Thybaut, J. Stade, in Temperature Dependence of Elastic, Piezoelectric and Dielectric Properties of La 3 Ga 5 SiO 14 and La 3 Ga 5.5 Ta 0.5 O 14 : An Application of Resonant Ultrasound Spectroscopy. IEEE Ultras. Symp. (2002), pp. 360–363 J. Schreuer, J. Rupp, C. Thybaut, J. Stade, in Temperature Dependence of Elastic, Piezoelectric and Dielectric Properties of La 3 Ga 5 SiO 14 and La 3 Ga 5.5 Ta 0.5 O 14 : An Application of Resonant Ultrasound Spectroscopy. IEEE Ultras. Symp. (2002), pp. 360–363
66.
Zurück zum Zitat T. Schneider, S. Doerner, P. Hauptmann, H. Fritze, D. Richter, Novel impedance interface for resonant high-temperature gas sensors. Sens. Actuators, B 111–112, 187–192 (2005)CrossRef T. Schneider, S. Doerner, P. Hauptmann, H. Fritze, D. Richter, Novel impedance interface for resonant high-temperature gas sensors. Sens. Actuators, B 111–112, 187–192 (2005)CrossRef
67.
Zurück zum Zitat C. Reiter, P.W. Krempl, H. Thanner, W. Wallnöfer, P.M. Worsch, Material properties of GaPO4 and their relevance for application. Ann. Chim. Sci. Mat. 26, 91–94 (2001)CrossRef C. Reiter, P.W. Krempl, H. Thanner, W. Wallnöfer, P.M. Worsch, Material properties of GaPO4 and their relevance for application. Ann. Chim. Sci. Mat. 26, 91–94 (2001)CrossRef
69.
Zurück zum Zitat M. Schulz, H. Fritze, U. Straube, in Determination of Material Parameters of Langasite (La 3 Ga 5 SiO 14) at Elevated Temperatures. 345th Wilhelm and Else Heraeus Seminar: “Acoustic Wave Based Sensors: Fundamentals, Concepts, New Applications,” Bad Honnef, Germany, 11–13 April 2005 M. Schulz, H. Fritze, U. Straube, in Determination of Material Parameters of Langasite (La 3 Ga 5 SiO 14) at Elevated Temperatures. 345th Wilhelm and Else Heraeus Seminar: “Acoustic Wave Based Sensors: Fundamentals, Concepts, New Applications,” Bad Honnef, Germany, 11–13 April 2005
70.
Zurück zum Zitat M. Schulz, Untersuchung der Eigenschaften von Langasit für Hochtemperaturanwendungen, Ph.D. thesis, Technische Unversität Clausthal, 2007 M. Schulz, Untersuchung der Eigenschaften von Langasit für Hochtemperaturanwendungen, Ph.D. thesis, Technische Unversität Clausthal, 2007
71.
Zurück zum Zitat J.J. Martin, in Acoustic Loss in Cultured Quartz. IEEE Int. Freq. Contr. Symp. (1996), pp. 170–178 J.J. Martin, in Acoustic Loss in Cultured Quartz. IEEE Int. Freq. Contr. Symp. (1996), pp. 170–178
72.
Zurück zum Zitat J.J. Martin, in High-temperature Acoustic Loss In Thickness-Shear Mode Quartz Resonators. IEEE/EIA Int. Freq. Contr. Symp. (2000), pp. 359–363 J.J. Martin, in High-temperature Acoustic Loss In Thickness-Shear Mode Quartz Resonators. IEEE/EIA Int. Freq. Contr. Symp. (2000), pp. 359–363
73.
Zurück zum Zitat T. Norby, Solid-state protonic conductors: principles, properties, progress and prospects. Solid State Ion. 125, 1–11 (1999)CrossRef T. Norby, Solid-state protonic conductors: principles, properties, progress and prospects. Solid State Ion. 125, 1–11 (1999)CrossRef
74.
Zurück zum Zitat J. Crank, The Mathematics of Diffusion (Oxford University Press, Oxford, 1975) J. Crank, The Mathematics of Diffusion (Oxford University Press, Oxford, 1975)
75.
Zurück zum Zitat T. Ishihara, H. Matsuda, Y. Takita, Oxide ion conductivity in doped NdAlO3 perovskite-type oxides. J. Electrochem. Soc. 141, 3444–3449 (1994)CrossRef T. Ishihara, H. Matsuda, Y. Takita, Oxide ion conductivity in doped NdAlO3 perovskite-type oxides. J. Electrochem. Soc. 141, 3444–3449 (1994)CrossRef
76.
Zurück zum Zitat N.J. Long, F. Lecarpentier, H.L. Tuller, Structure and electrical properties of Ni-substituted lanthanum gallate perovskites. J. Electroceram. 3(4), 399–407 (1999)CrossRef N.J. Long, F. Lecarpentier, H.L. Tuller, Structure and electrical properties of Ni-substituted lanthanum gallate perovskites. J. Electroceram. 3(4), 399–407 (1999)CrossRef
77.
Zurück zum Zitat C. Klemenz, High-quality La3Ga5.5Ta0.5O14 and La3Ga5.5Nb0.5O14 LPE films for oscillators and resonators. J. Cryst. Growth 250, 34–40 (2003)CrossRef C. Klemenz, High-quality La3Ga5.5Ta0.5O14 and La3Ga5.5Nb0.5O14 LPE films for oscillators and resonators. J. Cryst. Growth 250, 34–40 (2003)CrossRef
78.
Zurück zum Zitat D.P. Butt, Y. Park, T.N. Taylor, Thermal vaporization and deposition of gallium oxide in hydrogen. J. Nucl. Mater. 264, 71–77 (1999)CrossRef D.P. Butt, Y. Park, T.N. Taylor, Thermal vaporization and deposition of gallium oxide in hydrogen. J. Nucl. Mater. 264, 71–77 (1999)CrossRef
79.
Zurück zum Zitat B.A. Maksimov, S.S. Kazantsev, V.N. Molchanov, I.A. Verin, B.V. Mill, Crystal structure and microtwinning of monoclinic La3SbZn3Ge2O14 crystals of the langasite family. Crystallogr. Rep. 49, 585–590 (2004)CrossRef B.A. Maksimov, S.S. Kazantsev, V.N. Molchanov, I.A. Verin, B.V. Mill, Crystal structure and microtwinning of monoclinic La3SbZn3Ge2O14 crystals of the langasite family. Crystallogr. Rep. 49, 585–590 (2004)CrossRef
80.
Zurück zum Zitat H. Seh, H.L. Tuller, Defects and transport in langasite I: acceptor-doped (La3Ga5SiO14). J. Electroceram. 16, 115–125 (2006)CrossRef H. Seh, H.L. Tuller, Defects and transport in langasite I: acceptor-doped (La3Ga5SiO14). J. Electroceram. 16, 115–125 (2006)CrossRef
81.
Zurück zum Zitat H. Seh, H.L. Tuller, Defects and transport in langasite II: donor-doped La3Ga4.75Nb0.25SiO14. J. Electroceramics 15, 192–202 (2005)CrossRef H. Seh, H.L. Tuller, Defects and transport in langasite II: donor-doped La3Ga4.75Nb0.25SiO14. J. Electroceramics 15, 192–202 (2005)CrossRef
82.
Zurück zum Zitat H. Seh, H. Fritze, H.L. Tuller, Defect chemistry of langasite III: predictions of electrical and gravimetric properties and application to operation of high temperature crystal microbalance. J. Electroceramics 18, 130–147 (2007)CrossRef H. Seh, H. Fritze, H.L. Tuller, Defect chemistry of langasite III: predictions of electrical and gravimetric properties and application to operation of high temperature crystal microbalance. J. Electroceramics 18, 130–147 (2007)CrossRef
83.
Zurück zum Zitat H. Seh, Langasite bulk acoustic wave resonant sensor for high temperature applications. Ph.D. thesis, Department of Materials Science and Engineering, MIT, Cambridge, MA, USA, 2005 H. Seh, Langasite bulk acoustic wave resonant sensor for high temperature applications. Ph.D. thesis, Department of Materials Science and Engineering, MIT, Cambridge, MA, USA, 2005
84.
Zurück zum Zitat K. Schulgasser, Relationship between single-crystal and polycrystal electrical conductivity. J. Appl. Phys. 47, 1880–1886 (1976)CrossRef K. Schulgasser, Relationship between single-crystal and polycrystal electrical conductivity. J. Appl. Phys. 47, 1880–1886 (1976)CrossRef
85.
Zurück zum Zitat H. Kimura, S. Uda, X. Huang, S. Koh, in Equilibrium Phase diagram of Incongruent-Melting Langatate (La 3 Ta 0.5 Ga 5.5 O 14) and the Influence of Growth Atmosphere and Impurity Ir on the Resistivity of Langatate. 15th International Conference on Crystal Growth, Salt Lake City, USA, 12–17 August 2007 (preliminary abstract: http://www.crystalgrowth.us/iccg15) H. Kimura, S. Uda, X. Huang, S. Koh, in Equilibrium Phase diagram of Incongruent-Melting Langatate (La 3 Ta 0.5 Ga 5.5 O 14) and the Influence of Growth Atmosphere and Impurity Ir on the Resistivity of Langatate. 15th International Conference on Crystal Growth, Salt Lake City, USA, 12–17 August 2007 (preliminary abstract: http://​www.​crystalgrowth.​us/​iccg15)
86.
Zurück zum Zitat P.G. Shewmon, Diffusion in Solids (McGraw-Hill, New York, 1963) P.G. Shewmon, Diffusion in Solids (McGraw-Hill, New York, 1963)
87.
Zurück zum Zitat J. Maier, Mass transport in the presence of internal defect reactions-concept of conservative ensembles: IV tracer diffusion and intercorrelation with chemical diffusion and ion conductivity. J. Am. Ceram. Soc. 76, 1228–1232 (1993)CrossRef J. Maier, Mass transport in the presence of internal defect reactions-concept of conservative ensembles: IV tracer diffusion and intercorrelation with chemical diffusion and ion conductivity. J. Am. Ceram. Soc. 76, 1228–1232 (1993)CrossRef
88.
Zurück zum Zitat A. Kaminskii, B. Mill, G. Khodzhabagyan, A. Konstantinova, O.A.I., I. Silvestrova, Investigation of trigonal (La1 − x Nd x )3Ga5SiO14 crystals: I. Growth and optical properties. Phys. Stat. Sol. (A) 80, 387–398 (1983)CrossRef A. Kaminskii, B. Mill, G. Khodzhabagyan, A. Konstantinova, O.A.I., I. Silvestrova, Investigation of trigonal (La1 − x Nd x )3Ga5SiO14 crystals: I. Growth and optical properties. Phys. Stat. Sol. (A) 80, 387–398 (1983)CrossRef
89.
Zurück zum Zitat I.H. Jung, Y.H. Kang, K. Joo, A. Yoshikawa, T. Fukuda, K. Auh, Ca3Ga2Ge4O14 (CGG)-type Sr3Nb0.95Ga3.083Si2O14 single crystal grown by the Czochralski method for piezoelectric applications. Mater. Lett. 51, 129–134 (2001)CrossRef I.H. Jung, Y.H. Kang, K. Joo, A. Yoshikawa, T. Fukuda, K. Auh, Ca3Ga2Ge4O14 (CGG)-type Sr3Nb0.95Ga3.083Si2O14 single crystal grown by the Czochralski method for piezoelectric applications. Mater. Lett. 51, 129–134 (2001)CrossRef
90.
Zurück zum Zitat B.H.T. Chai, A.N.P. Bustamante, M.C. Chou, in A New Class of Ordered Langasite Structure Compounds. IEEE/EIA Int. Freq. Contr. Symp. (2000), pp. 163–168 B.H.T. Chai, A.N.P. Bustamante, M.C. Chou, in A New Class of Ordered Langasite Structure Compounds. IEEE/EIA Int. Freq. Contr. Symp. (2000), pp. 163–168
91.
Zurück zum Zitat F.A. Kröger, The Chemistry of Imperfect Crystals (North Holland, Amsterdam, 1964) F.A. Kröger, The Chemistry of Imperfect Crystals (North Holland, Amsterdam, 1964)
92.
Zurück zum Zitat Y.-M. Chiang, D.P. Birnie III, W.D. Kingery, Physical Ceramics (Wiley, New York, 1996) Y.-M. Chiang, D.P. Birnie III, W.D. Kingery, Physical Ceramics (Wiley, New York, 1996)
93.
Zurück zum Zitat R.H. Doremus, Diffusion of Reactive Molecules in Solids and Melts (Wiley, New York, 2002) R.H. Doremus, Diffusion of Reactive Molecules in Solids and Melts (Wiley, New York, 2002)
94.
Zurück zum Zitat R. Glöckner, A. Neiman, Y. Larring, T. Norby, Protons in Sr3(Sr1 + x Nb2 − x )O9 − 3x/2 perovskite. Solid State Ion. 125, 369–376 (1999)CrossRef R. Glöckner, A. Neiman, Y. Larring, T. Norby, Protons in Sr3(Sr1 + x Nb2 − x )O9 − 3x/2 perovskite. Solid State Ion. 125, 369–376 (1999)CrossRef
95.
Zurück zum Zitat S. Suzuki, S. Nakashima, In-situ IR measurements of OH species in quartz at high temperatures. Phys. Chem. Miner. 26, 217–225 (1999)CrossRef S. Suzuki, S. Nakashima, In-situ IR measurements of OH species in quartz at high temperatures. Phys. Chem. Miner. 26, 217–225 (1999)CrossRef
96.
Zurück zum Zitat F. Shimojo, K. Hoshino, H. Okazaki, Effects of doped acceptor ions on proton diffusion in perovskite oxides: a first-principles molecular dynamics simulation. J. Phys.: Condens. Matter 10, 285–294 (1998)CrossRef F. Shimojo, K. Hoshino, H. Okazaki, Effects of doped acceptor ions on proton diffusion in perovskite oxides: a first-principles molecular dynamics simulation. J. Phys.: Condens. Matter 10, 285–294 (1998)CrossRef
97.
Zurück zum Zitat I.E. Animitsa, A.Y. Neiman, A.R. Sharafutdinov, M.G. Kazakova, Strontium tantalates with a perovskite structure: their conductivity and high-temperature interaction with water. Russ. J. Electrochem. 37, 266–272 (2001)CrossRef I.E. Animitsa, A.Y. Neiman, A.R. Sharafutdinov, M.G. Kazakova, Strontium tantalates with a perovskite structure: their conductivity and high-temperature interaction with water. Russ. J. Electrochem. 37, 266–272 (2001)CrossRef
98.
Zurück zum Zitat J. Schreuer, C. Thybaut, M. Prestat, J. Stade, E. Haussuhl, in Towards an Understanding of the Anomalous Electromechanical Behaviour of Langasite and Related Compounds at High Temperatures. IEEE Ultras. Symp. (2003), pp. 196–199 J. Schreuer, C. Thybaut, M. Prestat, J. Stade, E. Haussuhl, in Towards an Understanding of the Anomalous Electromechanical Behaviour of Langasite and Related Compounds at High Temperatures. IEEE Ultras. Symp. (2003), pp. 196–199
99.
Zurück zum Zitat W. Johnson, S. Kim, S. Uda, in Acoustic Loss in Langasite and Langanite. Proc. IEEE Int. Freq. Contr. Symp. (2003), pp. 646–649 W. Johnson, S. Kim, S. Uda, in Acoustic Loss in Langasite and Langanite. Proc. IEEE Int. Freq. Contr. Symp. (2003), pp. 646–649
100.
Zurück zum Zitat E. Ansorge, S. Schimpf, S. Hirsch, J. Sauerwald, H. Fritze, B. Schmidt, Evaluation of langasite (La3Ga5SiO14) as a material for high temperature microsystems. Sens. Actuators A 130–131, 393–396 (2006) E. Ansorge, S. Schimpf, S. Hirsch, J. Sauerwald, H. Fritze, B. Schmidt, Evaluation of langasite (La3Ga5SiO14) as a material for high temperature microsystems. Sens. Actuators A 130–131, 393–396 (2006)
101.
Zurück zum Zitat E. Ansorge, B. Schmidt, J. Sauerwald, H. Fritze, Langasite for microelectro-mechanical systems. Phys. Status Solidi A 208, 377–389 (2011)CrossRef E. Ansorge, B. Schmidt, J. Sauerwald, H. Fritze, Langasite for microelectro-mechanical systems. Phys. Status Solidi A 208, 377–389 (2011)CrossRef
102.
Zurück zum Zitat J. Sauerwald, D. Richter, H. Fritze, Micromachined piezoelectric structures for high-temperature sensors. J. Electroceramics 22, 180–184 (2009)CrossRef J. Sauerwald, D. Richter, H. Fritze, Micromachined piezoelectric structures for high-temperature sensors. J. Electroceramics 22, 180–184 (2009)CrossRef
103.
Zurück zum Zitat J. Sauerwald, D. Richter, E. Ansorge, B. Schmidt, H. Fritze, Langasite based miniaturized functional structures—preparation, high-temperature properties and applications. Phys. Status Solidi A 208, 390–403 (2011)CrossRef J. Sauerwald, D. Richter, E. Ansorge, B. Schmidt, H. Fritze, Langasite based miniaturized functional structures—preparation, high-temperature properties and applications. Phys. Status Solidi A 208, 390–403 (2011)CrossRef
104.
Zurück zum Zitat H. Fritze, O. Schneider, H. Seh, H.L. Tuller, G. Borchardt, High temperature bulk acoustic wave properties of langasite. Phys. Chem. Chem. Phys. 5, 5207–5214 (2003)CrossRef H. Fritze, O. Schneider, H. Seh, H.L. Tuller, G. Borchardt, High temperature bulk acoustic wave properties of langasite. Phys. Chem. Chem. Phys. 5, 5207–5214 (2003)CrossRef
105.
Zurück zum Zitat S.L. Firebaugh, K.F. Jensen, M.A. Schmidt, Investigation of high-temperature degradation of platinum thin films with an in-situ resistance measurement apparatus. J. Microelectromech. Syst. 7, 128–135 (1998)CrossRef S.L. Firebaugh, K.F. Jensen, M.A. Schmidt, Investigation of high-temperature degradation of platinum thin films with an in-situ resistance measurement apparatus. J. Microelectromech. Syst. 7, 128–135 (1998)CrossRef
106.
Zurück zum Zitat K. Inoue, S. Katsuo, Propagation characteristics of surface acoustic waves on langasite. Jpn. J. Appl. Phys. 37, 2909–2913 (1998)CrossRef K. Inoue, S. Katsuo, Propagation characteristics of surface acoustic waves on langasite. Jpn. J. Appl. Phys. 37, 2909–2913 (1998)CrossRef
107.
Zurück zum Zitat R. Fowler, L. Nordheim, Electron emission in intense electric fields. Proc. R. Soc. Lond. A-Contain Pap. Biol. Character 119, 173–181 (1928) R. Fowler, L. Nordheim, Electron emission in intense electric fields. Proc. R. Soc. Lond. A-Contain Pap. Biol. Character 119, 173–181 (1928)
108.
Zurück zum Zitat C.A. Spindt, I. Brodie, L. Humphrey, E.R. Westerberg, Physical properties of thin-film field emission cathodes with molybdenum cones. J. Appl. Phys. 47, 5248–5263 (1976)CrossRef C.A. Spindt, I. Brodie, L. Humphrey, E.R. Westerberg, Physical properties of thin-film field emission cathodes with molybdenum cones. J. Appl. Phys. 47, 5248–5263 (1976)CrossRef
109.
Zurück zum Zitat H. Fritze, H.L. Tuller, Erfassen eines Umwelteinflusses durch Änderung der Leitfähigkeit der Sensorschicht eines piezoelektrischen Materials Europäisches Patent Nr. 1695074 H. Fritze, H.L. Tuller, Erfassen eines Umwelteinflusses durch Änderung der Leitfähigkeit der Sensorschicht eines piezoelektrischen Materials Europäisches Patent Nr. 1695074
110.
Zurück zum Zitat D. Richter, H. Fritze, T. Schneider, P. Hauptmann, in Selectivity Improvement of High Temperature Resonant Gas Sensors by Application of Different Electrode Layouts. Sensor, Internat. Conf. (Wunstorf: AMA Service), vol. 12, pp. 19–24 (2005) D. Richter, H. Fritze, T. Schneider, P. Hauptmann, in Selectivity Improvement of High Temperature Resonant Gas Sensors by Application of Different Electrode Layouts. Sensor, Internat. Conf. (Wunstorf: AMA Service), vol. 12, pp. 19–24 (2005)
111.
Zurück zum Zitat J.A. Kosinski, R.A. Pastore, Jr., E. Bigler, M. Pereira da Cunha, C.D. Malocha, J. Detaint, in A Review of Langasite Material Constants from BAW and SAW Data: Toward an Improved Data Set. IEEE Int. Freq. Contr. Symp. (2001), pp. 278–286 J.A. Kosinski, R.A. Pastore, Jr., E. Bigler, M. Pereira da Cunha, C.D. Malocha, J. Detaint, in A Review of Langasite Material Constants from BAW and SAW Data: Toward an Improved Data Set. IEEE Int. Freq. Contr. Symp. (2001), pp. 278–286
112.
Zurück zum Zitat J.A. Kilner, R.A. De Souza, I.C. Fullarton, Surface exchange of oxygen in mixed conducting perovskite oxides. Solid State Ion. 86–88, 703–709 (1996)CrossRef J.A. Kilner, R.A. De Souza, I.C. Fullarton, Surface exchange of oxygen in mixed conducting perovskite oxides. Solid State Ion. 86–88, 703–709 (1996)CrossRef
113.
Zurück zum Zitat A.D. Le Claire, The analysis of grain boundary diffusion measurement. Br. J. Appl. Phys. 14, 351–356 (1963)CrossRef A.D. Le Claire, The analysis of grain boundary diffusion measurement. Br. J. Appl. Phys. 14, 351–356 (1963)CrossRef
114.
Zurück zum Zitat P. Fielitz, G. Borchardt, M. Schmücker, H. Schneider, How to measure volume diffusivities and grain boundary diffusivities of oxygen in polycrystalline oxides. Solid State Ion. 160, 75–83 (2003)CrossRef P. Fielitz, G. Borchardt, M. Schmücker, H. Schneider, How to measure volume diffusivities and grain boundary diffusivities of oxygen in polycrystalline oxides. Solid State Ion. 160, 75–83 (2003)CrossRef
115.
Zurück zum Zitat M. Schulz, H. Fritze, H.L. Tuller, H. Seh, Diffusion related implications for langasite resonator operation. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51/11, 1381–1387 (2004)CrossRef M. Schulz, H. Fritze, H.L. Tuller, H. Seh, Diffusion related implications for langasite resonator operation. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51/11, 1381–1387 (2004)CrossRef
116.
Zurück zum Zitat W.H. Press, B.P. Flannery, S.A. Teukolsky, W.T. Vetterling, Numerical Recipes in Pascal. (Cambridge University Press, New York, 1994) W.H. Press, B.P. Flannery, S.A. Teukolsky, W.T. Vetterling, Numerical Recipes in Pascal. (Cambridge University Press, New York, 1994)
Metadaten
Titel
High-temperature piezoelectric crystals and devices
verfasst von
Holger Fritze
Publikationsdatum
01.06.2011
Verlag
Springer US
Erschienen in
Journal of Electroceramics / Ausgabe 1-4/2011
Print ISSN: 1385-3449
Elektronische ISSN: 1573-8663
DOI
https://doi.org/10.1007/s10832-011-9639-6

Weitere Artikel der Ausgabe 1-4/2011

Journal of Electroceramics 1-4/2011 Zur Ausgabe