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Journal of Materials Science
Erschienen in: Journal of Materials Science 5/2018

09.11.2017 | Electronic materials

Improving the high-frequency magnetic properties of as-deposited CoFe films by ultra-low gas pressure

verfasst von: XiaoLi Tang, You Yu, Hua Su, HuaiWu Zhang, ZhiYong Zhong, YuLan Jing

Erschienen in: Journal of Materials Science | Ausgabe 5/2018

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Abstract

CoFe films without buffer layers were deposited at different ultra-low argon pressures ranging from 0.085 to 0.847 mTorr. This pressure range was one to two orders lower than the normal sputtering pressure. As a consequence, the static magnetic properties, including coercivity and magnetic anisotropy field, were improved with decrease argon pressure. The high-frequency permeability spectra showed that the resonance frequency and the damping factor of the films also reached optimal values at ultra-low pressure. Basing on atomic force microscopy observations, we attributed the excellent properties to the improved morphologies of the films and released internal stress.
Vorheriger Artikel Ion imprinting approach for the fabrication of an electrochemical sensor and sorbent for lead ions in real samples using modified multiwalled carbon nanotubes
Nächster Artikel Synthesis and characterization of CuFeMnO4 prepared by co-precipitation method

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Metadaten
Titel
Improving the high-frequency magnetic properties of as-deposited CoFe films by ultra-low gas pressure
verfasst von
XiaoLi Tang
You Yu
Hua Su
HuaiWu Zhang
ZhiYong Zhong
YuLan Jing
Publikationsdatum
09.11.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 5/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1794-y

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