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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 16/2017

28.04.2017

Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer

verfasst von: Muhammad Zharfan Mohd Halizan, Nur Adilah Roslan, Shahino Mah Abdullah, Nurain Abdul Halim, Thamil Selvi Velayutham, Kai Lin Woon, Azzuliani Supangat

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 16/2017

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Abstract

This work aims at improving the performance of vertical organic field effect transistor (VOFET) by synthesizing the different morphology of dielectric layer; porous and non-porous to be used in the fabrication of 3-dimensional (3D) VOFET. In this work, poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] 75/25 have been used as a dielectric layer in the fabrication of 3D VOFET. To produce the 3D VOFET, porous alumina template is applied as to allow the replicating process between the template and P(VDF-TrFE) to occur. It is found that the replicating process has generated the porous structure of P(VDF-TrFE). Two types of VOFET, one with the integration of porous and one without the porous have been fabricated and characterized. VOFET without the porous has the current of 3.5 × 10−4 A obtained at drain-source voltage (VDS) of 25 V with the turn-on voltage of 10 V. Meanwhile, the VOFET integrated with porous recorded a better current of 2.0 × 10−3 A at VDS of 25 V with the turn-on voltage of 7 V.
Vorheriger Artikel Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport
Nächster Artikel A study of microwave absorbing properties in Co–Gd doped M-type Ba–Sr hexaferrites prepared using ceramic method

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Metadaten
Titel
Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer
verfasst von
Muhammad Zharfan Mohd Halizan
Nur Adilah Roslan
Shahino Mah Abdullah
Nurain Abdul Halim
Thamil Selvi Velayutham
Kai Lin Woon
Azzuliani Supangat
Publikationsdatum
28.04.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 16/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7005-4

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