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2017 | OriginalPaper | Buchkapitel

3. In Situ High-Temperature X-ray Diffraction of Thin Films: Chemical Expansion and Kinetics

verfasst von : Jose Santiso, Roberto Moreno

Erschienen in: Electro-Chemo-Mechanics of Solids

Verlag: Springer International Publishing

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Abstract

This chapter reviews the use of in-situ X-ray diffraction analyses for exploring the chemical expansion produced by oxygen stoichiometry changes in thin oxide films during oxidation and reduction, as well as the kinetics of oxygen exchange at the surface of the films. This technique has demonstated to serve as a non-invasive and very selective complementary tool for fundamental studies on mixed ionic-electronic conducting materials.

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Fußnoten
1
The assumption that oxygen defects concentration profile is homogenous in the whole film thickness is not entirely true. In some cases the XRD peaks show a slight broadening after film oxidation, compared to a narrower peak attained after lower pO2 conditions. This is an indication that the film may develop a chemical expansion profile across the thickness depending on the strain imposed by the substrate mismatch.
 
2
In this heterostructure the GDC interlayer only acts as a barrier to prevent the chemical reaction between LSCF cathode and YSZ electrolyte.
 
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Metadaten
Titel
In Situ High-Temperature X-ray Diffraction of Thin Films: Chemical Expansion and Kinetics
verfasst von
Jose Santiso
Roberto Moreno
Copyright-Jahr
2017
DOI
https://doi.org/10.1007/978-3-319-51407-9_3

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