Skip to main content

2011 | OriginalPaper | Buchkapitel

4. In-Use Failures

verfasst von : Allyson L. Hartzell, Mark G. da Silva, Herbert R. Shea

Erschienen in: MEMS Reliability

Verlag: Springer US

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

This chapter addresses in-use failures of MEMS, with an emphasis on the physics of failure. Chapter 3 dealt with eliminating failures from a design and manufacturing perspective. In this chapter we focus on how a well-designed, fabricated and packaged device can fail in use. There is a tight link between the design, manufacturing and in-use failures. Understanding the physics of failure (e.g., creep, fatigue) and the properties of materials used and the link to the process flow (e.g., yield strength of poly-silicon following HF release) lead to improved design rules to ensure the device will operate reliably in the expected operating environment. A concurrent design of the package is often required, but is not addressed in this chapter.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Fußnoten
1
This procedure was developed by Subramanian Sundaram at the EPFL.
 
Literatur
3.
Zurück zum Zitat Gad-el-Hak, M. (ed) (2002) The MEMS Handbook. Boca Raton, FL: CRC Press.MATH Gad-el-Hak, M. (ed) (2002) The MEMS Handbook. Boca Raton, FL: CRC Press.MATH
5.
Zurück zum Zitat Boyce, B.L., Grazier, J.M., Buchheit, T.E., Shaw, M.J. (2007) Strength distributions in polycrystalline silicon MEMS. J. Microelectromech. Syst. 16(2), 179.CrossRef Boyce, B.L., Grazier, J.M., Buchheit, T.E., Shaw, M.J. (2007) Strength distributions in polycrystalline silicon MEMS. J. Microelectromech. Syst. 16(2), 179.CrossRef
6.
Zurück zum Zitat Chen, K.-S., Ayon, A., Spearing, S.M. (2000) Controlling and testing the fracture strength of silicon on the mesoscale. J. Am. Ceramic Soc. 83(6), 1476–1484.CrossRef Chen, K.-S., Ayon, A., Spearing, S.M. (2000) Controlling and testing the fracture strength of silicon on the mesoscale. J. Am. Ceramic Soc. 83(6), 1476–1484.CrossRef
7.
Zurück zum Zitat Sharpe, W.N., Bagdahn, J., Jackson, K., Coles, G. (2003) Tensile testing of MEMS materials—recent progress. J. Mater. Sci. 38, 4075–4079.CrossRef Sharpe, W.N., Bagdahn, J., Jackson, K., Coles, G. (2003) Tensile testing of MEMS materials—recent progress. J. Mater. Sci. 38, 4075–4079.CrossRef
8.
Zurück zum Zitat Bagdahn, J., Sharpe, W.N., Jadaan, O. (2003) Fracture strength of polysilicon at stress concentrations. J. Microelectromech. Syst. 12(3), 302–312.CrossRef Bagdahn, J., Sharpe, W.N., Jadaan, O. (2003) Fracture strength of polysilicon at stress concentrations. J. Microelectromech. Syst. 12(3), 302–312.CrossRef
9.
Zurück zum Zitat Tanner, D.M., Walraven, J.A., Helgesen, K., Irwin, L.W., Brown, F., Smith, N.F., Masters, N. (2000) MEMS reliability in shock environments. Proc. 38th IEEE Int. Reliability Phys. Symp. Tanner, D.M., Walraven, J.A., Helgesen, K., Irwin, L.W., Brown, F., Smith, N.F., Masters, N. (2000) MEMS reliability in shock environments. Proc. 38th IEEE Int. Reliability Phys. Symp.
11.
Zurück zum Zitat Srikar, V.T., Senturia, S.D. (2002) The reliability of microelectromechanical systems (MEMS) in shock environments. J. Microelectromech. Syst. 11(3), 206.CrossRef Srikar, V.T., Senturia, S.D. (2002) The reliability of microelectromechanical systems (MEMS) in shock environments. J. Microelectromech. Syst. 11(3), 206.CrossRef
12.
Zurück zum Zitat Sundaram, S. private communication. subramanian.s88@gmail.com Sundaram, S. private communication. subramanian.s88@gmail.com
13.
Zurück zum Zitat Greek, S., Ericson, F., Johansson, S., Fürtsch, M., Rump, A. (1999) Mechanical characterization of thick polysilicon films: Young’s modulus and fracture strength evaluated with microstructures. J. Micromech. Microeng. 9, 245–251.CrossRef Greek, S., Ericson, F., Johansson, S., Fürtsch, M., Rump, A. (1999) Mechanical characterization of thick polysilicon films: Young’s modulus and fracture strength evaluated with microstructures. J. Micromech. Microeng. 9, 245–251.CrossRef
14.
Zurück zum Zitat Wagner, U., Muller-Fiedler, R., Bagdahn, J., Michel, B., Paul, O. (2003) Mechanical reliability of epipoly MEMS structures under shock load. TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, vol. 1. Wagner, U., Muller-Fiedler, R., Bagdahn, J., Michel, B., Paul, O. (2003) Mechanical reliability of epipoly MEMS structures under shock load. TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, vol. 1.
15.
Zurück zum Zitat Sang, W.Y., Yazdi, N., Perkins, N.C., Najafi, K. (2005) Novel integrated shock protection for MEMS. Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers. TRANSDUCERS ’05. The 13th International Conference on, vol.1. Sang, W.Y., Yazdi, N., Perkins, N.C., Najafi, K. (2005) Novel integrated shock protection for MEMS. Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers. TRANSDUCERS ’05. The 13th International Conference on, vol.1.
16.
Zurück zum Zitat Liu, H., Bhushan, B. (2004) Nanotribological characterization of digital micromirror devices using an atomic force microscope. Ultramicroscopy 100, 391–412.CrossRef Liu, H., Bhushan, B. (2004) Nanotribological characterization of digital micromirror devices using an atomic force microscope. Ultramicroscopy 100, 391–412.CrossRef
17.
Zurück zum Zitat Hartzell, A., Woodilla, D. (1999) Reliability methodology for prediction of micromachined accelerometer stiction. 37th International Reliability Physics Symposium (IRPS), San Diego, California, 202 Hartzell, A., Woodilla, D. (1999) Reliability methodology for prediction of micromachined accelerometer stiction. 37th International Reliability Physics Symposium (IRPS), San Diego, California, 202
18.
Zurück zum Zitat Swiler, T.P., Krishnamoorthy, U., Clews, P.J., Baker, M.S., Tanner, D.M. (2008) Challenges of designing and processing extreme low-G microelectromechanical system (MEMS) accelerometers, Proc. SPIE 6884, 68840O, DOI: 10.1117/12.77. Swiler, T.P., Krishnamoorthy, U., Clews, P.J., Baker, M.S., Tanner, D.M. (2008) Challenges of designing and processing extreme low-G microelectromechanical system (MEMS) accelerometers, Proc. SPIE 6884, 68840O, DOI: 10.1117/12.77.
20.
Zurück zum Zitat Stauffer, J.-M., Dutoit, B., Arbab, B. (2006) Standard MEMS sensor technologies for harsh environment. IET Digest 2006, (11367), 91–96, DOI: 10.1049/ic:20060450. Stauffer, J.-M., Dutoit, B., Arbab, B. (2006) Standard MEMS sensor technologies for harsh environment. IET Digest 2006, (11367), 91–96, DOI: 10.1049/ic:20060450.
21.
Zurück zum Zitat Stauffer, J.-M. (2006) Standard MEMS capacitive accelerometers for harsh environment. Paper CANEUS2006-11070, Proceedings of CANEUS2006, August 27–September 1, Toulouse, France Stauffer, J.-M. (2006) Standard MEMS capacitive accelerometers for harsh environment. Paper CANEUS2006-11070, Proceedings of CANEUS2006, August 27–September 1, Toulouse, France
22.
Zurück zum Zitat Habibi, S., Cooper,S.J., Stauffer, J.-M., Dutoit, B. (2008) Gun hard inertial measurement unit based on MEMS capacitive accelerometer and rate sensor. IEEE/ION Position Location and Navigation System (PLANS) Conference. Habibi, S., Cooper,S.J., Stauffer, J.-M., Dutoit, B. (2008) Gun hard inertial measurement unit based on MEMS capacitive accelerometer and rate sensor. IEEE/ION Position Location and Navigation System (PLANS) Conference.
23.
Zurück zum Zitat Ghose, K., Shea, H.R. (2009) Fabrication and testing of a MEMS based Earth sensor. Transducers 2009, Denver, CO, USA, June 21–25, paper M3P.077. Ghose, K., Shea, H.R. (2009) Fabrication and testing of a MEMS based Earth sensor. Transducers 2009, Denver, CO, USA, June 21–25, paper M3P.077.
24.
Zurück zum Zitat Suhir, E. (1997) Is the maximum acceleration an adequate criterion of the dynamic strength of a structural element in an electronic product? IEEE Trans. Components Packaging Manuf. Technol.—Part A, 20(4), December 1997. Suhir, E. (1997) Is the maximum acceleration an adequate criterion of the dynamic strength of a structural element in an electronic product? IEEE Trans. Components Packaging Manuf. Technol.—Part A, 20(4), December 1997.
25.
Zurück zum Zitat Harris C.M. (ed) (2002) Harris’ Shock and Vibration Handbook, 5th edn. New York: McGraw-Hill. Harris C.M. (ed) (2002) Harris’ Shock and Vibration Handbook, 5th edn. New York: McGraw-Hill.
26.
Zurück zum Zitat Young, W.C. Roark’s Formulas for Stress And Strain, 6th edn. New York: McGraw Hill. Young, W.C. Roark’s Formulas for Stress And Strain, 6th edn. New York: McGraw Hill.
27.
Zurück zum Zitat Muhlstein, C. L., Brown, S. B., Ritchie, R. O. (2001) High-cycle fatigue of single-crystal silicon thin films. J. Microelectromech. Syst. 10, 593.CrossRef Muhlstein, C. L., Brown, S. B., Ritchie, R. O. (2001) High-cycle fatigue of single-crystal silicon thin films. J. Microelectromech. Syst. 10, 593.CrossRef
28.
Zurück zum Zitat Gasparyan, A., Shea, H., Arney, S., Aksyuk, V., Simon, M.E., Pardo, F., Chan, H.B., Kim, J., Gates, J., Kraus, J.S., Goyal, S., Carr, D., Kleiman, R. Drift-Free, 1000G Mechanical Shock Tolerant Single-Crystal Silicon Two-Axis MEMS Tilting Mirrors in a 1000×1000-Port Optical Crossconnect, Post deadline paper PD36-1, Optical Fiber Communication Conference and Exhibit 2003, OFC 2003, March 2003 Atlanta, GA. DOI: 10.1109/OFC.2003.1248617 Gasparyan, A., Shea, H., Arney, S., Aksyuk, V., Simon, M.E., Pardo, F., Chan, H.B., Kim, J., Gates, J., Kraus, J.S., Goyal, S., Carr, D., Kleiman, R. Drift-Free, 1000G Mechanical Shock Tolerant Single-Crystal Silicon Two-Axis MEMS Tilting Mirrors in a 1000×1000-Port Optical Crossconnect, Post deadline paper PD36-1, Optical Fiber Communication Conference and Exhibit 2003, OFC 2003, March 2003 Atlanta, GA. DOI: 10.1109/OFC.2003.1248617
29.
Zurück zum Zitat Kahn, H., Deeb, C., Chasiotis, I., Heuer, A.H. (2005) Anodic oxidation during MEMS processing of silicon and polysilicon: native oxides can be thicker than you think. J. Microelectromech. Syst. 14, 914–923.CrossRef Kahn, H., Deeb, C., Chasiotis, I., Heuer, A.H. (2005) Anodic oxidation during MEMS processing of silicon and polysilicon: native oxides can be thicker than you think. J. Microelectromech. Syst. 14, 914–923.CrossRef
30.
Zurück zum Zitat Miller, D., Gall, K., Stoldt, C. (2005) Galvanic corrosion of miniaturized polysilicon structures: morphological, electrical, and mechanical effects. Electrochem. Solid-State Lett. 8, G223–G226.CrossRef Miller, D., Gall, K., Stoldt, C. (2005) Galvanic corrosion of miniaturized polysilicon structures: morphological, electrical, and mechanical effects. Electrochem. Solid-State Lett. 8, G223–G226.CrossRef
31.
Zurück zum Zitat Modlinski, R., Ratchev, P., Witvrouw, A., Puers, R., DeWolf, I. (2005) Creep-resistant aluminum alloys for use in MEMS. J. Micromech. Microeng. 15, S165–S170, doi:10.1088/0960-1317/15/7/023CrossRef Modlinski, R., Ratchev, P., Witvrouw, A., Puers, R., DeWolf, I. (2005) Creep-resistant aluminum alloys for use in MEMS. J. Micromech. Microeng. 15, S165–S170, doi:10.1088/0960-1317/15/7/023CrossRef
32.
Zurück zum Zitat Douglass, M.R. (1998) Lifetime estimates and unique failure mechanisms of the digital micromirror device (DMD). 36th Annual International Reliability Physics Symposium, Reno, Nevada. Douglass, M.R. (1998) Lifetime estimates and unique failure mechanisms of the digital micromirror device (DMD). 36th Annual International Reliability Physics Symposium, Reno, Nevada.
33.
Zurück zum Zitat Modlinski, R., Witvrouw, A., Ratchev, P., Puers, R., den Toonder, J.M.J., De Wolf, I. (2004) Creep characterization of Al alloy thin films for use in MEMS applications. Microelectron. Eng. 76, 272–278.CrossRef Modlinski, R., Witvrouw, A., Ratchev, P., Puers, R., den Toonder, J.M.J., De Wolf, I. (2004) Creep characterization of Al alloy thin films for use in MEMS applications. Microelectron. Eng. 76, 272–278.CrossRef
34.
Zurück zum Zitat Ritchie, R.O., Dauskardt, R.H. (1991) J. Ceram. Soc. Jpn. 99, 1047–1062.CrossRef Ritchie, R.O., Dauskardt, R.H. (1991) J. Ceram. Soc. Jpn. 99, 1047–1062.CrossRef
35.
Zurück zum Zitat Ritchie, R.O. (1999) Mechanisms of fatigue-crack propagation in ductile and brittle solids. Int. J. Fracture 100, 55–83.CrossRef Ritchie, R.O. (1999) Mechanisms of fatigue-crack propagation in ductile and brittle solids. Int. J. Fracture 100, 55–83.CrossRef
36.
Zurück zum Zitat Van Arsdell, W.W., Brown, S.B. (1999) Subcritical crack growth in silicon MEMS. J. Microelectromech. Syst. 8, 319.CrossRef Van Arsdell, W.W., Brown, S.B. (1999) Subcritical crack growth in silicon MEMS. J. Microelectromech. Syst. 8, 319.CrossRef
37.
Zurück zum Zitat Muhlstein, C.L., Stach, E.A., Ritchie, R.O. (2002) Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems. Appl. Phys. Lett. 80, 1532.CrossRef Muhlstein, C.L., Stach, E.A., Ritchie, R.O. (2002) Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems. Appl. Phys. Lett. 80, 1532.CrossRef
38.
Zurück zum Zitat Muhlstein, C.L., Stach, E.A., Ritchie, R.O. (2002) A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading. Acta Mater. 50, 3579.CrossRef Muhlstein, C.L., Stach, E.A., Ritchie, R.O. (2002) A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading. Acta Mater. 50, 3579.CrossRef
39.
Zurück zum Zitat Kahn, H., Chen, L., Ballerini, R., Heuer, A.H. (2006) Acta Mater. 54, 667CrossRef Kahn, H., Chen, L., Ballerini, R., Heuer, A.H. (2006) Acta Mater. 54, 667CrossRef
40.
Zurück zum Zitat Kahn, H., Ballerini, R., Bellante, J.J., Heuer, A.H. (2002) Fatigue failure in polysilicon not due to simple stress corrosion cracking. Science 298, 1215. Kahn, H., Ballerini, R., Bellante, J.J., Heuer, A.H. (2002) Fatigue failure in polysilicon not due to simple stress corrosion cracking. Science 298, 1215.
41.
Zurück zum Zitat Alsem, D.H. et al. (2007) Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: effects of environment and surface oxide thickness. J. Appl. Phys. 101, 013515.CrossRef Alsem, D.H. et al. (2007) Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: effects of environment and surface oxide thickness. J. Appl. Phys. 101, 013515.CrossRef
42.
Zurück zum Zitat Douglass, M.R. (2003) DMD reliability: a MEMS success story. In R. Ramesham, D. Tanner (eds) Proceedings of the Reliability, Testing, and Characterization of MEMS/ MOMES II, SPIE, Bellingham, WA, Vol. 4980, 1–11.CrossRef Douglass, M.R. (2003) DMD reliability: a MEMS success story. In R. Ramesham, D. Tanner (eds) Proceedings of the Reliability, Testing, and Characterization of MEMS/ MOMES II, SPIE, Bellingham, WA, Vol. 4980, 1–11.CrossRef
43.
Zurück zum Zitat Yang, Y., Allameh, S., Lou, J., Imasogie, B., Boyce, B.L., Soboyejo, W.O. (2007) Fatigue of LIGA Ni micro-electro-mechanical system thin films. Metallurgical Mater. Trans. A 38A, 2340. Yang, Y., Allameh, S., Lou, J., Imasogie, B., Boyce, B.L., Soboyejo, W.O. (2007) Fatigue of LIGA Ni micro-electro-mechanical system thin films. Metallurgical Mater. Trans. A 38A, 2340.
44.
Zurück zum Zitat Cho, H.S., Hemker, K.J., Lian, K., Goettert, J., Dirras, G. (2003) Sens. Actuat. A: Phys. 103(1–2), 59–63.CrossRef Cho, H.S., Hemker, K.J., Lian, K., Goettert, J., Dirras, G. (2003) Sens. Actuat. A: Phys. 103(1–2), 59–63.CrossRef
45.
Zurück zum Zitat Son, D. et al. (2005) Tensile properties and fatigue crack growth in LIGA nickel MEMS structures. Mater. Sci. Eng. A 406, 274–278.CrossRef Son, D. et al. (2005) Tensile properties and fatigue crack growth in LIGA nickel MEMS structures. Mater. Sci. Eng. A 406, 274–278.CrossRef
46.
Zurück zum Zitat Allameh, M., Lou, J., Kavishe, F., Buchheit, T.E., Soboyejo, W.O. (2004) Mater. Sci. Eng. A 371, 256–66.CrossRef Allameh, M., Lou, J., Kavishe, F., Buchheit, T.E., Soboyejo, W.O. (2004) Mater. Sci. Eng. A 371, 256–66.CrossRef
47.
Zurück zum Zitat Reid, J.R., Webster, R.T. (2002) Measurements of charging in capacitive microelectromechanical switches. Electron. Lett. 38(24), 1544–1545.CrossRef Reid, J.R., Webster, R.T. (2002) Measurements of charging in capacitive microelectromechanical switches. Electron. Lett. 38(24), 1544–1545.CrossRef
48.
Zurück zum Zitat De Groot, W.A., Webster, J.R., Felnhofer, D., Gusev, E.P. (2009) Review of device and reliability physics of dielectrics in electrostatically driven MEMS devices. IEEE Trans. Dev. Mater. Reliability 9(2), art. no. 4813209, 190–202. De Groot, W.A., Webster, J.R., Felnhofer, D., Gusev, E.P. (2009) Review of device and reliability physics of dielectrics in electrostatically driven MEMS devices. IEEE Trans. Dev. Mater. Reliability 9(2), art. no. 4813209, 190–202.
49.
Zurück zum Zitat Shea, H.R., Gasparyan, A., Chan, H.B., Arney, S., Frahm, R.E., López, D., Jin, S., McConnell, R.P. (2004) Effects of electrical leakage currents on MEMS reliability and performance. IEEE Trans Dev. Mater. Reliability 4(2), 198–207. Shea, H.R., Gasparyan, A., Chan, H.B., Arney, S., Frahm, R.E., López, D., Jin, S., McConnell, R.P. (2004) Effects of electrical leakage currents on MEMS reliability and performance. IEEE Trans Dev. Mater. Reliability 4(2), 198–207.
50.
Zurück zum Zitat Crank, J. (1997) The mathematics of diffusion, 2nd edn. Oxford: Clarendon Press, 47–51. Crank, J. (1997) The mathematics of diffusion, 2nd edn. Oxford: Clarendon Press, 47–51.
51.
Zurück zum Zitat Lewis, T.J. (1978) In D.T. Clark and W.J. Feast (eds) The Movement of Electrical Charge Along Polymer Surfaces in Polymer Surfaces. New York: John Wiley & Sons. Lewis, T.J. (1978) In D.T. Clark and W.J. Feast (eds) The Movement of Electrical Charge Along Polymer Surfaces in Polymer Surfaces. New York: John Wiley & Sons.
52.
Zurück zum Zitat Ehmke, J., Goldsmith, C., Yao, Z., Eshelman, S. (2002) Method and apparatus for switching high frequency signals. Raytheon Co., United States patent 6,391,675; May 21. Ehmke, J., Goldsmith, C., Yao, Z., Eshelman, S. (2002) Method and apparatus for switching high frequency signals. Raytheon Co., United States patent 6,391,675; May 21.
53.
Zurück zum Zitat Ohring, M. (1998) Reliability and Failure of Electronic Materials and Devices. New York: Academic Press, 310–325 and references therein. Ohring, M. (1998) Reliability and Failure of Electronic Materials and Devices. New York: Academic Press, 310–325 and references therein.
54.
Zurück zum Zitat Rebeiz, G.M., Muldavin, J.B. (2001) RF MEMS switches and switch circuits. in IEEE Microwave Magazine 2(4), 59–71.CrossRef Rebeiz, G.M., Muldavin, J.B. (2001) RF MEMS switches and switch circuits. in IEEE Microwave Magazine 2(4), 59–71.CrossRef
55.
Zurück zum Zitat Rebeiz, G.M. (2003) RF MEMS: Theory, Design and Technology. New York: John Wiley and Sons.CrossRef Rebeiz, G.M. (2003) RF MEMS: Theory, Design and Technology. New York: John Wiley and Sons.CrossRef
56.
Zurück zum Zitat Goldsmith, C.L., Forehand, D., Scarbrough, D., Peng, Z., Palego, C., Hwang, J.C.M., Clevenger, J. (2008) Understanding and improving longevity in RF MEMS capacitive switches. Proc. Int. Soc. Opt. Eng. 6884(03), Feb 2008. Goldsmith, C.L., Forehand, D., Scarbrough, D., Peng, Z., Palego, C., Hwang, J.C.M., Clevenger, J. (2008) Understanding and improving longevity in RF MEMS capacitive switches. Proc. Int. Soc. Opt. Eng. 6884(03), Feb 2008.
57.
Zurück zum Zitat Peng, Z., Palego, C., Hwang, J.C.M., Moody, C., Malczewski, A., Pillans, B., Forehand, D., Goldsmith, C. (2009) Effect of packaging on dielectric charging in RF MEMS capacitive switches. IEEE Int. Microwave Symp. Dig. 1637–1640, June 2009. Peng, Z., Palego, C., Hwang, J.C.M., Moody, C., Malczewski, A., Pillans, B., Forehand, D., Goldsmith, C. (2009) Effect of packaging on dielectric charging in RF MEMS capacitive switches. IEEE Int. Microwave Symp. Dig. 1637–1640, June 2009.
58.
Zurück zum Zitat Wibbeler, J., Pfeifer, G., Hietschold, M. (1998) Sens. Actuators A 71, 74–80.CrossRef Wibbeler, J., Pfeifer, G., Hietschold, M. (1998) Sens. Actuators A 71, 74–80.CrossRef
59.
Zurück zum Zitat Van Spengen, W.M., Puers, R., Mertens, R., De Wolf, I. (2004) A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches. J. Micromechan. Microeng. 14(4), 514–521.CrossRef Van Spengen, W.M., Puers, R., Mertens, R., De Wolf, I. (2004) A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches. J. Micromechan. Microeng. 14(4), 514–521.CrossRef
60.
Zurück zum Zitat Goldsmith, C.L., Ehmke, J., Malczewski, A., Pillans, B., Eshelman, S., Yao, Z., Brank. J., Eberly, M. (2001) Lifetime characterization of capacitive RF MEMS switches. IEEE MTT-S Int. Microwave Symp. Digest 3, 227–230. Goldsmith, C.L., Ehmke, J., Malczewski, A., Pillans, B., Eshelman, S., Yao, Z., Brank. J., Eberly, M. (2001) Lifetime characterization of capacitive RF MEMS switches. IEEE MTT-S Int. Microwave Symp. Digest 3, 227–230.
61.
Zurück zum Zitat Peng, Z., Palego, C., Hwang, J.C.M., Forehand, D., Goldsmith, C., Moody, C., Malczewski, A., Pillans, B., Daigler, R., Papapolymerou, J. (2009) Impact of humidity on dielectric charging in RF MEMS capacitive switches. IEEE Microwave Wireless Comp. Lett. vol. 1. Peng, Z., Palego, C., Hwang, J.C.M., Forehand, D., Goldsmith, C., Moody, C., Malczewski, A., Pillans, B., Daigler, R., Papapolymerou, J. (2009) Impact of humidity on dielectric charging in RF MEMS capacitive switches. IEEE Microwave Wireless Comp. Lett. vol. 1.
62.
Zurück zum Zitat Schönhuber, M.J. (1969) Breakdown of gases below paschen minimum: basic design data of high-voltage equipment. IEEE Trans. Power Apparatus Syst. vol. PAS-88, 100, Feb 1969 Schönhuber, M.J. (1969) Breakdown of gases below paschen minimum: basic design data of high-voltage equipment. IEEE Trans. Power Apparatus Syst. vol. PAS-88, 100, Feb 1969
63.
Zurück zum Zitat Dhariwal, R.S., Torres, J.M., Desmulliez, M.P.Y. (2000) Electric field breakdown at micrometre separations in air and nitrogen at atmospheric pressure. IEE Proc. Sci. Meas. Technol. 147(5), 261–265.CrossRef Dhariwal, R.S., Torres, J.M., Desmulliez, M.P.Y. (2000) Electric field breakdown at micrometre separations in air and nitrogen at atmospheric pressure. IEE Proc. Sci. Meas. Technol. 147(5), 261–265.CrossRef
64.
Zurück zum Zitat Torres, J.-M., Dhariwal, R.S. (1999) Electric field breakdown at micrometre separations. Nanotechnology 10, 102–107.CrossRef Torres, J.-M., Dhariwal, R.S. (1999) Electric field breakdown at micrometre separations. Nanotechnology 10, 102–107.CrossRef
65.
Zurück zum Zitat Slade, P.G., Taylor, E.D. (2002) Electrical breakdown in atmospheric air between closely spaced (0.2 μm–40 μm) electrical contacts. IEEE Trans. Comp. Packaging Technol. 25 (3), 390–396.CrossRef Slade, P.G., Taylor, E.D. (2002) Electrical breakdown in atmospheric air between closely spaced (0.2 μm–40 μm) electrical contacts. IEEE Trans. Comp. Packaging Technol. 25 (3), 390–396.CrossRef
66.
Zurück zum Zitat Wallash, A., Levit, L. (2003) Electrical breakdown and ESD phenomena for devices with nanometer-to-micron gaps. Proc. of SPIE 4980, 87–96.CrossRef Wallash, A., Levit, L. (2003) Electrical breakdown and ESD phenomena for devices with nanometer-to-micron gaps. Proc. of SPIE 4980, 87–96.CrossRef
67.
Zurück zum Zitat Chen, C.-H., Yeh, J.A., Wang, P.-J. (2006) Electrical breakdown phenomena for devices with micron separations. J. Micromech. Microeng. 16, 1366–1373.CrossRef Chen, C.-H., Yeh, J.A., Wang, P.-J. (2006) Electrical breakdown phenomena for devices with micron separations. J. Micromech. Microeng. 16, 1366–1373.CrossRef
68.
Zurück zum Zitat Strong, F.W., Skinner, J.L., Tien, N.C. (2008) Electrical discharge across micrometer-scale gaps for planar MEMS structures in air at atmospheric pressure. J. Micromech. Microeng. 18, 075025.CrossRef Strong, F.W., Skinner, J.L., Tien, N.C. (2008) Electrical discharge across micrometer-scale gaps for planar MEMS structures in air at atmospheric pressure. J. Micromech. Microeng. 18, 075025.CrossRef
69.
Zurück zum Zitat Paschen, F. (1889) Über die zum Funkenübergang in Luft, Wasserstoff und Kohlensäure bei verschiedenen Drucken erforderliche Potentialdifferenz. Annalen der Physik 273(5), 69–96.CrossRef Paschen, F. (1889) Über die zum Funkenübergang in Luft, Wasserstoff und Kohlensäure bei verschiedenen Drucken erforderliche Potentialdifferenz. Annalen der Physik 273(5), 69–96.CrossRef
70.
Zurück zum Zitat Townsend, J. (1915) Electricity in Gases. New York: Oxford University Press. Townsend, J. (1915) Electricity in Gases. New York: Oxford University Press.
71.
Zurück zum Zitat Braithwaite, N.St.J. (2000) Introduction to gas discharges. Plasma Sources Sci. Technol. 9, 517–527. Braithwaite, N.St.J. (2000) Introduction to gas discharges. Plasma Sources Sci. Technol. 9, 517–527.
72.
Zurück zum Zitat Osmokrovic, P., Vujisic, M., Stankovic, K., Vasic, A., Loncar, B. (2007) Mechanism of electrical breakdown of gases for pressures from 10-9 to 1 bar and inter-electrode gaps from 0.1 to 0.5 mm. Plasma Sources Sci. Technol. 16, 643–655. Osmokrovic, P., Vujisic, M., Stankovic, K., Vasic, A., Loncar, B. (2007) Mechanism of electrical breakdown of gases for pressures from 10-9 to 1 bar and inter-electrode gaps from 0.1 to 0.5 mm. Plasma Sources Sci. Technol. 16, 643–655.
73.
Zurück zum Zitat Torres, J.-M., Dhariwal, R.S. (1999) Electric field breakdown at micrometre separations in air and vacuum. Microsyst. Technol. 6(1), November, 6–10, DOI 10.1007/s005420050166. Torres, J.-M., Dhariwal, R.S. (1999) Electric field breakdown at micrometre separations in air and vacuum. Microsyst. Technol. 6(1), November, 6–10, DOI 10.1007/s005420050166.
74.
Zurück zum Zitat Carazzetti, P., Shea, H.R. (2009) Electrical breakdown at low pressure for planar MEMS devices with 10 to 500 micrometer gaps. J. Micro/Nanolithography, MEMS, and MOEMS 8(3), 031305. Carazzetti, P., Shea, H.R. (2009) Electrical breakdown at low pressure for planar MEMS devices with 10 to 500 micrometer gaps. J. Micro/Nanolithography, MEMS, and MOEMS 8(3), 031305.
75.
Zurück zum Zitat Habermehl, S., Apodaca, R.T., Kaplar, R.J. (2009) On dielectric breakdown in silicon-rich silicon nitride thin films. Appl. Phys. Lett. 94, 012905.CrossRef Habermehl, S., Apodaca, R.T., Kaplar, R.J. (2009) On dielectric breakdown in silicon-rich silicon nitride thin films. Appl. Phys. Lett. 94, 012905.CrossRef
76.
Zurück zum Zitat Amerasekera, A., Duvvury, C. (2002) ESD in Silicon Integrated Circuits, 2nd edn. New York: John Wiley and Sons.CrossRef Amerasekera, A., Duvvury, C. (2002) ESD in Silicon Integrated Circuits, 2nd edn. New York: John Wiley and Sons.CrossRef
77.
Zurück zum Zitat Walraven, J.A., Soden, J.M., Tanner, D.M., Tangyunyong, P., Cole Jr., E.I., Anderson, R.E., Irwin, L.W. (2000) Electrostatic discharge/electrical overstress susceptibility in MEMS: A new failure mode. Proceedings. Walraven, J.A., Soden, J.M., Tanner, D.M., Tangyunyong, P., Cole Jr., E.I., Anderson, R.E., Irwin, L.W. (2000) Electrostatic discharge/electrical overstress susceptibility in MEMS: A new failure mode. Proceedings.
78.
Zurück zum Zitat Ruan, J., Nolhier, N., Papaioannou, G.J., Trémouilles, D., Puyal, V., Villeneuve, C., Idda, T., Coccetti, F., Plana, R. Accelerated lifetime test of RF-MEMS switches under ESD stress. Microelectron. Reliability 49(9–11), 125. Ruan, J., Nolhier, N., Papaioannou, G.J., Trémouilles, D., Puyal, V., Villeneuve, C., Idda, T., Coccetti, F., Plana, R. Accelerated lifetime test of RF-MEMS switches under ESD stress. Microelectron. Reliability 49(9–11), 125.
79.
Zurück zum Zitat Tazzoli, A., Peretti, V., Meneghesso, G. (2007) Electrostatic discharge and cycling effects on ohmic and capacitive RF-MEMS switches. IEEE Trans. Dev. Mater. Reliability 7(3), 429–436.CrossRef Tazzoli, A., Peretti, V., Meneghesso, G. (2007) Electrostatic discharge and cycling effects on ohmic and capacitive RF-MEMS switches. IEEE Trans. Dev. Mater. Reliability 7(3), 429–436.CrossRef
80.
Zurück zum Zitat Sangameswaran, S., Coster, J.D., Linten, D., Scholz, M., Thijs, S., Haspeslagh, L., Witvrouw, A., Hoof, C.V., Groeseneken, G., Wolf, I.D. (2008) ESD reliability issues in microelectromechanical systems (MEMS): A case study on micromirrors. Electric. Sangameswaran, S., Coster, J.D., Linten, D., Scholz, M., Thijs, S., Haspeslagh, L., Witvrouw, A., Hoof, C.V., Groeseneken, G., Wolf, I.D. (2008) ESD reliability issues in microelectromechanical systems (MEMS): A case study on micromirrors. Electric.
82.
Zurück zum Zitat Black, J.R. (1969) IEEE Trans. Electron Dev. ED-16, 338. Black, J.R. (1969) IEEE Trans. Electron Dev. ED-16, 338.
83.
Zurück zum Zitat Courbat, J., Briand, D., de Rooij, N.F. (2008) Sens. Actuators A 142, 284–291.CrossRef Courbat, J., Briand, D., de Rooij, N.F. (2008) Sens. Actuators A 142, 284–291.CrossRef
84.
Zurück zum Zitat Hon, M., DelRio, F.W., White, J.T., Kendig, M., Carraro, C., Maboudian, R. (2008) Cathodic corrosion of polycrystalline silicon MEMS. Sens. Actuators A: Phys. 145–146, July–August 2008, 323–329, DOI: 10.1016/j.sna.20 Hon, M., DelRio, F.W., White, J.T., Kendig, M., Carraro, C., Maboudian, R. (2008) Cathodic corrosion of polycrystalline silicon MEMS. Sens. Actuators A: Phys. 145–146, July–August 2008, 323–329, DOI: 10.1016/j.sna.20
86.
Zurück zum Zitat Shea, H. (2006) Reliability of MEMS for space applications. Proc. of SPIE Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V, Vol. 6111, 61110A. DOI:10.1117/12.651008. Shea, H. (2006) Reliability of MEMS for space applications. Proc. of SPIE Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V, Vol. 6111, 61110A. DOI:10.1117/12.651008.
87.
Zurück zum Zitat “Handbook of radiation effects”, by A. Holmes-Siedle and L. Adams, Oxford University press, 2nd edition, 2002 “Handbook of radiation effects”, by A. Holmes-Siedle and L. Adams, Oxford University press, 2nd edition, 2002
91.
Zurück zum Zitat Shea, H. (2009) Radiation sensitivity of microelectromechanical system devices. J. Micro/Nanolith. MEMS MOEMS 8(3), 031303, Jul–Sep 2009. Shea, H. (2009) Radiation sensitivity of microelectromechanical system devices. J. Micro/Nanolith. MEMS MOEMS 8(3), 031303, Jul–Sep 2009.
94.
Zurück zum Zitat Beasley, M. et al. (2004) MEMS thermal switch for spacecraft thermal control. Proc. SPIE 5344(98), DOI:10.1117/12.530906. Beasley, M. et al. (2004) MEMS thermal switch for spacecraft thermal control. Proc. SPIE 5344(98), DOI:10.1117/12.530906.
95.
Zurück zum Zitat Pierron, O.N., Macdonald, D.D., Muhlstein, C.L. (2005) Galvanic effects in Si-based microelectromechanical systems: thick oxide formation and its implications for fatigue reliability. Appl. Phys. Lett. 86, 211919.CrossRef Pierron, O.N., Macdonald, D.D., Muhlstein, C.L. (2005) Galvanic effects in Si-based microelectromechanical systems: thick oxide formation and its implications for fatigue reliability. Appl. Phys. Lett. 86, 211919.CrossRef
96.
Zurück zum Zitat Miller, D.C., Hughes, W.L., Wang, Z.L., Gall, K., Stoldt, C.R. (2006) Galvanic corrosion: a microsystems device integrity and reliability concern. Proc. SPIE 6111, 611105, DOI:10.1117/12.644932. Miller, D.C., Hughes, W.L., Wang, Z.L., Gall, K., Stoldt, C.R. (2006) Galvanic corrosion: a microsystems device integrity and reliability concern. Proc. SPIE 6111, 611105, DOI:10.1117/12.644932.
97.
Zurück zum Zitat Coumar, O., Poirot, P., Gaillard, R., Miller, F., Buard, N., Marchand, L. Total dose effects and SEE screening on MEMS COTS accelerometers. Radiation Effects Data Workshop, 2004 IEEE 22 July 2004, 125–129. Coumar, O., Poirot, P., Gaillard, R., Miller, F., Buard, N., Marchand, L. Total dose effects and SEE screening on MEMS COTS accelerometers. Radiation Effects Data Workshop, 2004 IEEE 22 July 2004, 125–129.
98.
Zurück zum Zitat Lee, C.I., Johnston, A.H., Tang, W.C., Barnes, C.E. (1996) Total dose effects on micromechanical systems (MEMS): accelerometers. IEEE Trans. Nucl. Sci. 43, 3127–3132.CrossRef Lee, C.I., Johnston, A.H., Tang, W.C., Barnes, C.E. (1996) Total dose effects on micromechanical systems (MEMS): accelerometers. IEEE Trans. Nucl. Sci. 43, 3127–3132.CrossRef
99.
Zurück zum Zitat Knudson, A.R., Buchner, S., McDonald, P., Stapor, W.J., Campbell, A.B., Grabowski, K.S., Knies, D.L. (1996) The effects of radiation on MEMS accelerometers. IEEE Trans. Nucl. Sci. 43, 3122–3126.CrossRef Knudson, A.R., Buchner, S., McDonald, P., Stapor, W.J., Campbell, A.B., Grabowski, K.S., Knies, D.L. (1996) The effects of radiation on MEMS accelerometers. IEEE Trans. Nucl. Sci. 43, 3122–3126.CrossRef
100.
Zurück zum Zitat Edmonds, L.D., Swift, G.M., Lee, C.I. (1998) Radiation response of a MEMS accelerometers: an electrostatic force. IEEE Trans. Nucl. Sci. 45, 2779–2788.CrossRef Edmonds, L.D., Swift, G.M., Lee, C.I. (1998) Radiation response of a MEMS accelerometers: an electrostatic force. IEEE Trans. Nucl. Sci. 45, 2779–2788.CrossRef
101.
Zurück zum Zitat Schanwald, L.P. et al. (1998) Radiation effects on surface micromachined comb drives and microengines. IEEE Trans. Nucl. Sci. 45(6), 2789–2798.CrossRef Schanwald, L.P. et al. (1998) Radiation effects on surface micromachined comb drives and microengines. IEEE Trans. Nucl. Sci. 45(6), 2789–2798.CrossRef
102.
Zurück zum Zitat Holbert, K.E., Nessel, J.A., McCready, S.S., Heger, A.S., Harlow, T.H. (2003) Response of piezoresistive MEMS accelerometers and pressure transducers to high gamma dose. Nuclear Sci. IEEE Trans. 50(6), Part 1, Dec. 2003, 18. Holbert, K.E., Nessel, J.A., McCready, S.S., Heger, A.S., Harlow, T.H. (2003) Response of piezoresistive MEMS accelerometers and pressure transducers to high gamma dose. Nuclear Sci. IEEE Trans. 50(6), Part 1, Dec. 2003, 18.
103.
Zurück zum Zitat McCready, S.S. et al. (2002) Piezoresistive micromechanical transducer operation in a pulsed neutron and gamma ray environment. IEEE Radiation Effects Data Workshop, 181–186. McCready, S.S. et al. (2002) Piezoresistive micromechanical transducer operation in a pulsed neutron and gamma ray environment. IEEE Radiation Effects Data Workshop, 181–186.
104.
Zurück zum Zitat Marinaro, D. et al. (2008) Proton radiation effects on MEMS silicon strain gauges. IEEE Trans. Nuclear Sci. 55(3), 1714.CrossRef Marinaro, D. et al. (2008) Proton radiation effects on MEMS silicon strain gauges. IEEE Trans. Nuclear Sci. 55(3), 1714.CrossRef
105.
Zurück zum Zitat Quadri, G., Nicot, J.M., Guibaud, G., Gilard, O. (2005) Optomechanical microswitch behavior in a space radiation environment. IEEE Trans. Nuclear Sci. 52(5), 1795.CrossRef Quadri, G., Nicot, J.M., Guibaud, G., Gilard, O. (2005) Optomechanical microswitch behavior in a space radiation environment. IEEE Trans. Nuclear Sci. 52(5), 1795.CrossRef
106.
Zurück zum Zitat Miyahira, T.F. et al. (2003 ) Total dose degradation of MEMS optical mirrors. IEEE Trans. Nuclear Sci. 50(6), Part 1, Dec. 2003, 1860–1866. Miyahira, T.F. et al. (2003 ) Total dose degradation of MEMS optical mirrors. IEEE Trans. Nuclear Sci. 50(6), Part 1, Dec. 2003, 1860–1866.
107.
Zurück zum Zitat McClure, S., Edmonds, L., Mihailovich, R., Johnston, A., Alonzo, P., DeNatale, J., Lehman, J., Yui, C. (2002) Radiation effects in microelectromechanical systems (MEMS): RF relays. IEEE Trans. Nucl. Sci. 49, 3197–3202, Dec. 2002.CrossRef McClure, S., Edmonds, L., Mihailovich, R., Johnston, A., Alonzo, P., DeNatale, J., Lehman, J., Yui, C. (2002) Radiation effects in microelectromechanical systems (MEMS): RF relays. IEEE Trans. Nucl. Sci. 49, 3197–3202, Dec. 2002.CrossRef
108.
Zurück zum Zitat Tazzoli, A., Cellere, G., Peretti, V., Paccagnella, A., Meneghesso, G. (2009) Radiation sensitivity of OHMIC RF-MEMS switches for spatial applications. Proc. IEEE Int. Conference Micro Electro Mechanical Syst. (MEMS). Tazzoli, A., Cellere, G., Peretti, V., Paccagnella, A., Meneghesso, G. (2009) Radiation sensitivity of OHMIC RF-MEMS switches for spatial applications. Proc. IEEE Int. Conference Micro Electro Mechanical Syst. (MEMS).
109.
Zurück zum Zitat Buchner, S. et al. (2007) Response of a MEMS microshutter operating at 60 K to ionizing radiation. IEEE Trans. Nuclear Sci. 54(6), 2463.CrossRef Buchner, S. et al. (2007) Response of a MEMS microshutter operating at 60 K to ionizing radiation. IEEE Trans. Nuclear Sci. 54(6), 2463.CrossRef
110.
Zurück zum Zitat Caffey, J.R., Kladitis, P.E. (2004) The effects of ionizing radiation on microelectromechanical systems (MEMS) actuators: electrostatic, electrothermal, and bimorph. Micro Electro Mech. Syst. 17th IEEE Int. Conference MEMS. Caffey, J.R., Kladitis, P.E. (2004) The effects of ionizing radiation on microelectromechanical systems (MEMS) actuators: electrostatic, electrothermal, and bimorph. Micro Electro Mech. Syst. 17th IEEE Int. Conference MEMS.
111.
Zurück zum Zitat Son, C., Ziaie, B. (2008) An implantable wireless microdosimeter for radiation oncology. Proc. IEEE Conference Micro Electro Mech. Syst. (MEMS 2008), 256. Son, C., Ziaie, B. (2008) An implantable wireless microdosimeter for radiation oncology. Proc. IEEE Conference Micro Electro Mech. Syst. (MEMS 2008), 256.
112.
Zurück zum Zitat Schwartz, R.N. et al. (2000) Gamma-ray radiation effects on RF MEMS switches. Proc. 2000 IEEE Microelectron. Reliability Qualification Workshop, Oct. 2000, IV.6. Schwartz, R.N. et al. (2000) Gamma-ray radiation effects on RF MEMS switches. Proc. 2000 IEEE Microelectron. Reliability Qualification Workshop, Oct. 2000, IV.6.
113.
Zurück zum Zitat Zhu, S.-Y. et al. (2001) Total dose radiation effects of pressure sensors fabricated on Unibond-SOI materials. Nucl. Sci. Tech. 12, 209–214. Zhu, S.-Y. et al. (2001) Total dose radiation effects of pressure sensors fabricated on Unibond-SOI materials. Nucl. Sci. Tech. 12, 209–214.
114.
Zurück zum Zitat Lamhamdi, M. et al. (2006) Characterization of dielectric-charging effects in PECVD nitrides for use in RF MEMS capacitive switches. Proc of 7th International conference on RF MEMS and RF microsystems (MEMSWAVE) 2006. Lamhamdi, M. et al. (2006) Characterization of dielectric-charging effects in PECVD nitrides for use in RF MEMS capacitive switches. Proc of 7th International conference on RF MEMS and RF microsystems (MEMSWAVE) 2006.
115.
Zurück zum Zitat Comizzoli, R.B. (1991) Surface Conductance on Insulators in the Presence of Water Vapor, in Materials Developments in Microelectronic Packaging: Performance and Reliability. Proceedings of the Fourth Electronic Materials and Processing Congress, 311 Comizzoli, R.B. (1991) Surface Conductance on Insulators in the Presence of Water Vapor, in Materials Developments in Microelectronic Packaging: Performance and Reliability. Proceedings of the Fourth Electronic Materials and Processing Congress, 311
116.
Zurück zum Zitat Lewerenz, H.J. (1992) Anodic oxides on silicon. Electrochimica Acta 37, 847–864.CrossRef Lewerenz, H.J. (1992) Anodic oxides on silicon. Electrochimica Acta 37, 847–864.CrossRef
117.
Zurück zum Zitat Perregaux, G., Gonseth, S., Debergh, P., Thiebaud, J.-P., Vuilliomenet, H. “Arrays of addressable high-speed optical microshutters” MEMS 2001. The 14th IEEE International Conference on MEMS, Jan 2001, 232–235. Perregaux, G., Gonseth, S., Debergh, P., Thiebaud, J.-P., Vuilliomenet, H. “Arrays of addressable high-speed optical microshutters” MEMS 2001. The 14th IEEE International Conference on MEMS, Jan 2001, 232–235.
118.
Zurück zum Zitat Plass, R.A., Walraven, J.A., Tanner, D.M., Sexton, F.W. Anodic oxidation-induced delamination of the SUMMiT poly 0 to Silicon Nitride Interface. In R. Ramesham, D.M. Tanner (eds) Reliability, Testing, and Characterization of MEMS/MOEMS II; Proc. SPIE V. Plass, R.A., Walraven, J.A., Tanner, D.M., Sexton, F.W. Anodic oxidation-induced delamination of the SUMMiT poly 0 to Silicon Nitride Interface. In R. Ramesham, D.M. Tanner (eds) Reliability, Testing, and Characterization of MEMS/MOEMS II; Proc. SPIE V.
119.
Zurück zum Zitat Shea, H.R., White, C., Gasparyan, A., Comizzoli, R.B., Abusch-Magder, D., Arney, S. (2000) Anodic oxidation and reliability of poly-Si MEMS electrodes at high voltages and in high relative humidity, in MEMS Reliability for Critical Applications, R.A. Lawton Proc. SPIE, 4180, 117–122. DOI: 10.1117/12.395700 Shea, H.R., White, C., Gasparyan, A., Comizzoli, R.B., Abusch-Magder, D., Arney, S. (2000) Anodic oxidation and reliability of poly-Si MEMS electrodes at high voltages and in high relative humidity, in MEMS Reliability for Critical Applications, R.A. Lawton Proc. SPIE, 4180, 117–122. DOI: 10.1117/12.395700
120.
Zurück zum Zitat Plass, R., Walraven, J., Tanner, D., Sexton, F. (2003) Anodic oxidation-induced delamination of the SUMMiT poly 0 to silicon nitride interface. In Proc. SPIE, 4980, 81–86.CrossRef Plass, R., Walraven, J., Tanner, D., Sexton, F. (2003) Anodic oxidation-induced delamination of the SUMMiT poly 0 to silicon nitride interface. In Proc. SPIE, 4980, 81–86.CrossRef
121.
Zurück zum Zitat Walker, J.A., Gabriel, K.J., Mehregany, M. (1990) Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutions. In: Proceedings from IEEE MEMS, Napa Valley, CA, February 11–14, 56–60. Walker, J.A., Gabriel, K.J., Mehregany, M. (1990) Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutions. In: Proceedings from IEEE MEMS, Napa Valley, CA, February 11–14, 56–60.
122.
Zurück zum Zitat Chasiotis, I., Knauss, W.G. (2003) The mechanical strength of polysilicon films: part 1. The influence of fabrication governed surface conditions. J. Mech. Phys. Solids 51, 1533–1550.CrossRef Chasiotis, I., Knauss, W.G. (2003) The mechanical strength of polysilicon films: part 1. The influence of fabrication governed surface conditions. J. Mech. Phys. Solids 51, 1533–1550.CrossRef
123.
Zurück zum Zitat Sharpe, W.N., Brown, J.S., Johnson, G.C., Knauss W.G. (1998) Round-robin tests of modulus and strength of polysilicon. Materials Research Society Proceedings, Vol. 518, San Francisco, CA, pp. 57–65. Sharpe, W.N., Brown, J.S., Johnson, G.C., Knauss W.G. (1998) Round-robin tests of modulus and strength of polysilicon. Materials Research Society Proceedings, Vol. 518, San Francisco, CA, pp. 57–65.
124.
Zurück zum Zitat LaVan, D.A., Tsuchiya, T., Coles, G., Knauss, W.G., Chasiotis, I., Read, D. (2001) Cross comparison of direct strength testing techniques on polysilicon films. In Muhlstein, C., Brown, S.B. (eds) Mechanical Properties of Structural Films, ASTM STP. LaVan, D.A., Tsuchiya, T., Coles, G., Knauss, W.G., Chasiotis, I., Read, D. (2001) Cross comparison of direct strength testing techniques on polysilicon films. In Muhlstein, C., Brown, S.B. (eds) Mechanical Properties of Structural Films, ASTM STP.
125.
Zurück zum Zitat Sinclair, J.D. (1988) Corrosion of electronics, the role of ionic substances. J. Electrochem. Soc. March 1988, p. 89C. Sinclair, J.D. (1988) Corrosion of electronics, the role of ionic substances. J. Electrochem. Soc. March 1988, p. 89C.
126.
Zurück zum Zitat Yan, B.D., Meilink, S.L., Warren, G.W., Wynblatt, P. (1986) Proc. Electron. Components Conf., 36, 95. Yan, B.D., Meilink, S.L., Warren, G.W., Wynblatt, P. (1986) Proc. Electron. Components Conf., 36, 95.
127.
Zurück zum Zitat Peck, D.S. (1986) Comprehensive model for humidity testing correlation. Annual Proceedings – Reliability Physics (Symposium), 44–50. Peck, D.S. (1986) Comprehensive model for humidity testing correlation. Annual Proceedings – Reliability Physics (Symposium), 44–50.
128.
Zurück zum Zitat Bitko, G., Monk, D.J., Maudie, T., Stanerson, D., Wertz, J., Matkin, J., Petrovic, S. Analytical techniques for examining reliability and failure mechanisms of barrier-coated encapsulated silicon pressure sensors exposed. Bitko, G., Monk, D.J., Maudie, T., Stanerson, D., Wertz, J., Matkin, J., Petrovic, S. Analytical techniques for examining reliability and failure mechanisms of barrier-coated encapsulated silicon pressure sensors exposed.
129.
Zurück zum Zitat Hamzah, A.A., Husaini, Y., Majlis, B.Y., Ahmad, I. (2008) Selection of high strength encapsulant for MEMS devices undergoing high-pressure packaging. Microsyst.Technol. 14(6), 766.CrossRef Hamzah, A.A., Husaini, Y., Majlis, B.Y., Ahmad, I. (2008) Selection of high strength encapsulant for MEMS devices undergoing high-pressure packaging. Microsyst.Technol. 14(6), 766.CrossRef
130.
Zurück zum Zitat Forehand, D.I., Goldsmith, C.L. (2005) Wafer Level Micropackaging for RF MEMS Switches. 2005 ASME InterPACK ‘05 Tech Conf, San Francisco, CA, July 2005. Forehand, D.I., Goldsmith, C.L. (2005) Wafer Level Micropackaging for RF MEMS Switches. 2005 ASME InterPACK ‘05 Tech Conf, San Francisco, CA, July 2005.
131.
Zurück zum Zitat Rebeiz, G.M. (2003) RF MEMS switches: status of the technology. Proceedings of Transducers 2003, The 12th International Conference on Solid State Sensors, Actuators and Microsystems, Boston, June 8–12, 1726. Rebeiz, G.M. (2003) RF MEMS switches: status of the technology. Proceedings of Transducers 2003, The 12th International Conference on Solid State Sensors, Actuators and Microsystems, Boston, June 8–12, 1726.
132.
Zurück zum Zitat Koons, H.C., Mazur, J.E., Selesnick, R.S., Blake, J.B., Fennell, J.F., Roeder, J.L., Anderson, P.C. (1670) The impact of the space environment on space systems. Aerospace Corp. report no. TR-99 (1670)-1, 20 July 1999. Koons, H.C., Mazur, J.E., Selesnick, R.S., Blake, J.B., Fennell, J.F., Roeder, J.L., Anderson, P.C. (1670) The impact of the space environment on space systems. Aerospace Corp. report no. TR-99 (1670)-1, 20 July 1999.
133.
Zurück zum Zitat George, T. (2003) Overview of MEMS/NEMS technology development for space applications at NASA/JPL. Proceedings of SPIE, Proc. SPIE Int. Soc. Opt. Eng. 5116, 136. George, T. (2003) Overview of MEMS/NEMS technology development for space applications at NASA/JPL. Proceedings of SPIE, Proc. SPIE Int. Soc. Opt. Eng. 5116, 136.
134.
Zurück zum Zitat Eberl, C. et al. (2006) Ultra high-cycle fatigue in pure Al thin films and line structures. Mater. Sci. Eng. A, 421(1–2), 15 April 2006, 68–76. Eberl, C. et al. (2006) Ultra high-cycle fatigue in pure Al thin films and line structures. Mater. Sci. Eng. A, 421(1–2), 15 April 2006, 68–76.
135.
Zurück zum Zitat Greywall, D. et al. (2003) Crystalline silicon tilting mirrors for optical cross-connect switches. IEEE/ASME Journal of Microelectromechanical Systems 12(5), 708 Greywall, D. et al. (2003) Crystalline silicon tilting mirrors for optical cross-connect switches. IEEE/ASME Journal of Microelectromechanical Systems 12(5), 708
136.
Zurück zum Zitat Arney, A., Gasparyan, A., Shea, H., SPIE Short course 434, Designing MEMS for reliability, presented at SemiCon West 2003, San Francisco, CA, USA Arney, A., Gasparyan, A., Shea, H., SPIE Short course 434, Designing MEMS for reliability, presented at SemiCon West 2003, San Francisco, CA, USA
Metadaten
Titel
In-Use Failures
verfasst von
Allyson L. Hartzell
Mark G. da Silva
Herbert R. Shea
Copyright-Jahr
2011
Verlag
Springer US
DOI
https://doi.org/10.1007/978-1-4419-6018-4_4

Neuer Inhalt