InP based semiconductor structures for radiation detection

We report the preparation of semi-insulating InP single crystals of p-type conductivity and intentionally undoped p-type epitaxial layers for radiation detection. We focus on (i) the growth of InP single crystals doped with copper by the Czochralski technique and their subsequent temperature annealing to convert them to a semi-insulating (SI) state of p-type conductivity, and (ii) the growth of thick (>10 μm) p-type InP layers by liquid phase epitaxy with an admixture of Pr and Dy. Grown layers and single crystals were examined by low-temperature photoluminescence spectroscopy, capacitance-voltage and temperature dependent Hall measurements. An efficient purification due to rare earth (RE) admixture has been observed and layers grown with the addition of Pr and Dy exhibit the change of electrical conductivity from n to p at certain RE concentration in the melt. Dominant acceptors responsible for conductivity conversion have been identified. Three types of detection structures exploiting the Schottky or Schottky like contacts on pure and SI p-type InP or exploiting the p–n junction were designed.