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Erschienen in:
01.04.2007
Iron and gold related defects in water quenched silicon
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2007
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Abstract
Thermally induced defects in heat-treated and then quenched in water n-silicon samples have been studied using deep level transient spectroscopy. Two deep levels at energies E
c – 0.48 eV and E
c – 0.25 eV are observed in high concentration. The emission rate signatures and annealing characteristics showed the DLTS signal due to level at energy position E
c – 0.48 eV is not only due to Au(A) but some other level also contributes to this signal. The energy state at E
c – 0.25 eV is identified to be pinned with E
c – 0.48 eV. The annealing characteristics also revealed the contribution of Au–Fe complex in DLTS signal of E
c – 0.25 eV level. A complementary behavior of these two levels in annealing characteristics has also been observed.