Journal of Computational Electronics

Editorial

Paolo Lugli, Aldo Di Carlo

Scaling MOSFETs to the Limit: A Physicists's Perspective

M.V. Fischetti

Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs

F.M. Bufler, A. Schenk, W. Fichtner

Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation

Gulzar A. Kathawala, Mohamed Mohamed, Umberto Ravaioli

Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs

Hideaki Tsuchiya, Motoki Horino, Tanroku Miyoshi

Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

Tatsuya Ezaki, Philipp Werner, Masami Hane

Does Circulation in Individual Current States Survive in the Total Current Density?

S.E. Laux, A. Kumar, M.V. Fischetti

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

Hiroshi Nakatsuji, Yoshinari Kamakura, Kenji Taniguchi

An Effective Potential Approach to Modeling 25 nm MOSFET Devices

S. Ahmed, C. Ringhofer, D. Vasileska

Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs

H. Takeda, N. Mori, C. Hamaguchi

“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs

G. Fiori, G. Iannaccone

Numerical Analysis of Tunneling Between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities

L. Bonci, M. Macucci, D. Guan, U. Ravaioli

Quantum Corrected Monte Carlo Simulation of Semiconductor Devices Using the Effective Conduction-Band Edge Method

Ting-Wei Tang, Bo Wu

Proximity Effect of the Contacts on Electron Transport in Mesoscopic Devices

Andrea Bertoni, Paolo Bordone, Giulio Ferrari, Nicoletta Giacobbi, Carlo Jacoboni

Microscopic Modelling of Quantum Open Systems: A Generalized Wigner-Function Approach

Remo Proietti Zaccaria, Rita C. Iotti, Fausto Rossi

A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations

H. Kosina, M. Nedjalkov, S. Selberherr

Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices

John R. Barker

A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

M. Boriçi, J.R. Watling, R. Wilkins, L. Yang, J.R. Barker

High Electron Mobility Limited by Remote Impurity Scattering

C. Hamaguchi

Gauge-Invariant Formulation of Fermi's Golden Rule and Its Application to High-Field Transport in Semiconductors

Emanuele Ciancio, Rita C. Iotti, Fausto Rossi

Quantum and Semi-Classical Transport in NEMO 1-D

Gerhard Klimeck

Coupling Maxwell's Equations to Full Band Particle-Based Simulators

J.S. Ayubi-Moak, S.M. Goodnick, S.J. Aboud, M. Saraniti, S. El-Ghazaly

Microscopic Modelling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool

Rita C. Iotti, Fausto Rossi

First Principles Calculations of Auger Recombination and Impact Ionization Rates in Semiconductors

S. Picozzi, R. Asahi, A.J. Freeman

Simulation of Lag Phenomena and Pulsed I-V Curves of Compound Semiconductor FETs as Affected by Impact Ionization

Y. Kazami, D. Kasai, Y. Mitani, K. Horio

Electrothermal Monte Carlo Simulations of InGaAs/AlGaAs HEMTs

N.J. Pilgrim, W. Batty, R.W. Kelsall

Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

J. Branlard, S. Aboud, S. Goodnick, M. Saraniti

Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method

A. Gehring, H. Kosina, S. Selberherr

Restoration of Magnetization Distributions from Joint Magnetic Force Microscopy Measurements and Micromagnetic Simulations

G. Csaba, W. Porod

BioMOCA: A Transport Monte Carlo Model for Ion Channels

T. van der Straaten, G. Kathawala, U. Ravaioli

Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations

S. Aboud, M. Saraniti, R. Eisenberg

Ion Channels as Devices

Bob Eisenberg

Coherent Phonon Scattering in Molecular Devices

A. Pecchia, M. Gheorghe, L. Latessa, A. Di Carlo

Brownian Ionic Channel Simulation

C. Millar, A. Asenov, S. Roy

Quantum Control of Capture Processes into Localized States of a Quantum Dot

T. Kuhn, M. Glanemann, V.M. Axt

Efficient Computational Method for Ballistic Currents and Application to Single Quantum Dots

M. Sabathil, S. Birner, D. Mamaluy, P. Vogl

Microscopic Description of Nanostructures Grown on (N11) Surfaces

Michael Povolotskyi, Jérôme Gleize, Aldo Di Carlo, Paolo Lugli, Stefan Birner, Peter Vogl

Signatures of a Discrete Level Spectrum and Dynamical Tunneling in the Conductance of a Large Open Quantum Dot

R. Akis, A. Ramamoorthy, D.K. Ferry, J.P. Bird

Mobility Variations in Ultra Small Devices due to Random Discrete Dopants

Craig Alexander, Jeremy R. Watling, Asen Asenov

Simulation of Electron Decoherence Induced by Carrier-Carrier Scattering

Andrea Bertoni

Influence of Carrier Mobility and Interface Trap States on the Transfer and Output Characteristics of Organic Thin Film Transistors

A. Bolognesi, A. Di Carlo

Advanced Simulation of Semiconductor Devices by Artificial Neural Networks

A. Caddemi, N. Donato, M.G. Xibilia

Ballistic Transport in SiGe and Strained-Si MOSFETs

G. Curatola, G. Iannaccone

Splitting-Scheme Solution of the Collisionless Wigner Equation with Non-Parabolic Band Profile

Lucio Demeio

Modeling Hot-Electron Injection in pFET's

Chris Duffy, Paul Hasler

Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations

Gareth Roy, Andrew R. Brown, Asen Asenov, Scott Roy

Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices

M.J. Gilbert, R. Akis, D.K. Ferry

Comparison Between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure

D. Guan, A. Godoy, U. Ravaioli, F. Gamiz

Simulation Study of High Performance III-V MOSFETs for Digital Applications

K. Kalna, L. Yang, A. Asenov

Study of RF Linearity in sub-50 nm MOSFETs Using Simulations

Wei Ma, Savas Kaya, Asen Asenov

Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters

Z. Ikonić, P. Harrison, R.W. Kelsall

Physics-Based Correction of Extracted Conductance Parameters of Nonlinear Microwave Semiconductor Devices

G. Leuzzi, A. Mencattini, M. Salmeri

Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

L. Yang, J.R. Watling, M. Boriçi, R.C.W. Wilkins, A. Asenov, J.R. Barker, S. Roy

3D Parallel Simulations of Fluctuation Effects in pHEMTs

A.J. García-Loureiro, K. Kalna, A. Asenov

A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes

José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi-Wang Shu

Two-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires

Alex Marchi, Susanna Reggiani, Andrea Bertoni, Massimo Rudan

Numerical Techniques for the Evaluation of Conductance and Noise in the Presence of a Perpendicular Magnetic Field

P. Marconcini, M. Macucci

Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices

M.G. Pala, G. Iannaccone

Modelling Photonic Band-Gap Structures having Multiple Defects

Agostino Giorgio, Anna Gina Perri

Design and Modelling of Photonic Band-Gap Resonance Cavity

Agostino Giorgio, Anna Gina Perri

Schottky Barrier Height at Organic/Metal Junctions from First-Principles

S. Picozzi, A. Pecchia, M. Gheorghe, A. Di Carlo, P. Lugli, B. Delley, M. Elstner

Modeling Nonlinear Propagation of Optical Signals in Semiconductor Optical Amplifiers

Andrea Reale, Paolo Lugli

Semiclassical and Quantum Transport in Si/SiO2 Superlattices

M. Rosini, C. Jacoboni, S. Ossicini

Applicability of Quasi-3D and 3D MOSFET Simulations in the ‘Atomistic’ Regime

S. Roy, A. Lee, A.R. Brown, A. Asenov

A Methodology for Quantitatively Introducing ‘Atomistic’ Fluctuations into Compact Device Models for Circuit Analysis

S. Roy, B. Cheng, G. Roy, A. Asenov

Monte Carlo Simulations of THz Quantum-Cascade Lasers

M. Manenti, F. Compagnone, A. Di Carlo, P. Lugli

Full-Band Tunneling Currents in Nanometer-Scale MOS Structures

F. Sacconi, A. Di Carlo, P. Lugli, M. Städele

Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs

Santhosh Krishnan, Dragica Vasileska

Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots

J. Sée, P. Dollfus, S. Galdin-Retailleau, P. Hesto

Monte Carlo Simulation of Electronic Noise in Semiconductor Materials and Devices Operating under Cyclostationary Conditions

P. Shiktorov, E. Starikov, V. Gružinskis, L. Reggiani, L. Varani, J.C. Vaissière, S. Pérez, T. González

The Density of States and the Pertinent Electronic Properties of the Quasi 2DEG in Simple and DMS Structures Subjected to an In-Plane Magnetic Field

Constantinos Simserides

Terahertz Generation from Dynamic Free-Carrier Superlattice in n + nn + InN Structures

E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J.C. Vaissière

Advanced Electromagnetic Modelling of Multilayer Monolithic Microwave Integrated Circuit

Alessandro Toscano, Lucio Vegni

Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs

J.R. Watling, L. Yang, M. Boriçi, J.R. Barker, A. Asenov

Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method

Shinya Yamakawa, Shela Aboud, Marco Saraniti, Stephen M. Goodnick

Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings

Yiming Li, Hsiao-Mei Lu

A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

Yiming Li, Ting-Wei Tang, Shao-Ming Yu

Kinetic Lattice Monte Carlo Simulations of Ad-Dimer Diffusion on the Silicon (100) Surface

R. Akis, D.K. Ferry

Volume Contents