Ausgabe 4/2002
Inhalt (8 Artikel)
The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures
D. Vasileska, I. Knezevic, R. Akis, S. Ahmed, D.K. Ferry
Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling
H. Takeda, N. Mori, C. Hamaguchi
Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors
S. Wigger, M. Saraniti, S. Goodnick, A. Leitenstorfer
The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
A. Asenov, J.R. Watling, A.R. Brown, D.K. Ferry