Ausgabe 1/1998
Inhalt (11 Artikel)
Regular Issue Paper
Colossal magnetoresistance in Sol-Gel derived epitaxial thin film of Co-doped La1−xCaxMnOx
Seung-Young Bae, D. Jefferey Snyder, Shan Xiang Wang
Regular Issue Paper
Fabrication of undoped semi-insulating InP by multiple-step wafer annealing
M. Uchida, K. Kainosho, M. Ohta, O. Oda
Regular Issue Paper
Refractory metal boride ohmic contacts to P-type 6H-SiC
T. N. Oder, J. R. Williams, S. E. Mohney, J. Crofton
Regular Issue Paper
Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors
H. K. Yow, P. A. Houston, C. C. Button, J. P. R. David, C. M. S. Ng
Regular Issue Paper
Growth of oriented diamond film on single crystalline 6H-SiC substrates
Xi Li, Y. Hayashi, S. K. Lilov, S. Nishino
Regular Issue Paper
Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays
Richard Nötzel, Manfred Ramsteiner, Zhichuan Niu, Achim Trampert, Lutz Däweritz, Klaus H. Ploog
Regular Issue Paper
Diamond-like carbon protective films for organic photoconductors
Y. C. Chan, X. S. Miao, X. M. He, S. T. Lee
Regular Issue Paper
The influence of rf induced bias on the properties of diamond-like carbon films prepared using ECR-CVD
S. F. Yoon, H. Yang, Rusli, J. Ahn, Q. Zhang
Letters Section
Sidewall spacer defined resonant interband tunneling diodes
K. Shiralagi, R. Tsui, H. Goronkin, S. Pendharkar, J. Tresek, S. Allen
Letters Section
The Al/Ni interfacial reactions under the influence of electric current
Wen-Chyuarn Liu, Sinn-Wen Chen, Chih-Ming Chen