Ausgabe 12/1999
Inhalt (32 Artikel)
The application of rapid thermal processing technology to the manufacture of integrated circuits—An overview
Alan Bratschun
Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions
Aditya Agarwal, Hans-J. Gossmann, Anthony T. Fiory
Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants
Daniel F. Downey, Scott W. Falk, Adam F. Bertuch, Steven D. Marcus
Secondary defect profile related to low energy implanted boron measured up to 3.5 µm depth into Si-substrates
L. Soliman, M. Benzohra, M. Masmoudi, K. Ketata, F. Boussaïd, A. Martinez, M. Ketata
The influence of vapor phase cleaning on the composition and the surface roughness of rapid thermal oxides and nitrided oxides
N. Sacher, B. Froeschle, F. Glowacki
Temperature Uniformity Optimization for a silicon implant anneal into GaAs using Opus ™ simulation software
Zaid Farukhi, Helmut Francz, Steven Marcus, Andreas Tillmann, Juergen Niess, Martin Drechsler
Wafer temperature measurement in a rapid thermal processor with modulated lamp power
B. Nguyenphu, A. T. Fiory
Calculation of emissivity of Si wafers
Bhushan Sopori, Wei Chen, Jamal Madjdpour, N. M. Ravindra
Evidence from spectral emissometry for conduction intraband transitions in the intrinsic regime for silicon
S. Abedrabbo, J. C. Hensel, A. T. Fiory, N. M. Ravindra
A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing
S. Venkataraman, R. Singh, V. Parihar, K. F. Poole, A. Rohatgi, V. Yeludur, A. Ebong
The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films
J. O. Olowolafe, I. Rau, K. M. Unruh, C. P. Swann, Z. Jawad, T. Alford
Optical properties of CdSxTe1−x polycrystalline thin films
D. A. Wood, D. W. Lane, K. D. Rogers, J. A. Coath
Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off
W. S. Wong, A. B. Wengrow, Y. Cho, A. Salleo, N. J. Quitoriano, N. W. Cheung, T. Sands
Preparation and properties of Ta2O5 film capacitors using TiSi2 bottom electrode
H. -S. Yang, Y. S. Choi, S. M. Cho
Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process
Oliver Breitschädel, Bertram Kuhn, Ferdinand Scholz, Heinz Schweizer
Growth and photoreflectance characterization of GaAs impact ionization avalanche transit time diodes
D. K. Gaskill, O. J. Glembocki, R. T. Holm, A. Giordana
Optimized electrolyte for electrochemical capacitance-voltage profiling of carrier concentration in In0.49Ga0.51P
A. Da Silva Filho, N. C. Frateschi
Zinc diffusion in InAsP/InGaAs heterostructures
Martin H. Ettenberg, Michael J. Lange, Alan R. Sugg, Marshall J. Cohen, Gregory H. Olsen
The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures
F. Huet, M-A. Di Forte-Poisson, M. Calligaro, J. Olivier, F. Wyczisk, J. Di Persio
Final polishing of Ga-polar GaN substrates using reactive ion etching
F. Karouta, J. L. Weyher, B. Jacobs, G. Nowak, A. Presz, I. Grzegory, L. M. F. Kaufmann
Optical characterization of hydrogenated amorphous silicon thin films deposited at high rate
S. H. Lin, Y. C. Chan, D. P. Webb, Y. W. Lam
Microstructure and corrosion resistance of room-temperature RF sputtered Ta2O5 thin films
A. K. Chu, M. J. Chuang, K. Y. Hsieh, H. L. Huang, Y. C. Yu, C. W. Wang, E. K. Lin
Characterization of amorphous Ni-Si binary alloy films by flash evaporation
Jun-Ichi Kodama, Takefumi Tsuboi, Nobuo Okamoto
Photoluminescence of Be implanted Si-doped GaAs
R. E. Kroon, J. R. Botha, J. H. Neethling, T. J. Drummond
Highly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films
Nae-in Lee, Jin-Woo Lee, Chul-Hi Han
Valence band discontinuity of the (0001) 2H-GaN / (111) 3C-SiC interface
S. W. King, R. F. Davis, C. Ronning, R. J. Nemanich
Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor
W. D. Sun, Fred H. Pollak, Patrick A. Folkes, Godfrey Gumbs
Shape stabilization and size equalization of InGaAs self-organized quantum dots
Qianghua Xie, J. L. Brown, R. L. Jones, J. E. Van Nostrand