Ausgabe 2/1999
Inhalt (9 Artikel)
Regular Issue Paper
Strain relaxation mechanisms in Si1−xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature
A. Rodríguez, T. Rodríguez, A. Kling, J. C. Soares, M. F. Da Silva, C. Ballesteros
Regular Issue Paper
Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique
S. Kerboeuf, M. Bettiati, J. L. Gentner, C. Belouet, J. Perrière, J. Jimenez, E. Martin
Regular Issue Paper
Transient behavior of Hg1−xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport
Yu-Ru Ge, Heribert Wiedemeier
Regular Issue Paper
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGex for MOS applications
L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki, C. K. Maiti
Regular Issue Paper
Interfacial reactions between liquid indium and nickel substrate
Y. H. Tseng, M. S. Yeh, T. H. Chuang
Regular Issue Paper
SIMS analysis of nitrided oxides grown on 4H-SiC
P. Tanner, S. Dimitrijev, H-F. Li, D. Sweatman, K. E. Prince, H. B. Harrison
Regular Issue Paper
The structural changes in CdS-CdTe thin films due to annealing
K. D. Rogers, J. D. Painter, D. W. Lane, M. Healy
Regular Issue Paper
New plasma chemistries for etching III–V compound semiconductors: Bl3 and BBr3
Takeshi Maeda, Hyun Cho, Jin Hong, S. J. Pearton
Regular Issue Paper
Impurity incorporation and the surface morphology of MOVPE grown GaAs
Jiang Li, T. F. Kuech