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Journal of Materials Science: Materials in Electronics

Ausgabe 2/1998

Inhalt (14 Artikel)

Metallization studies on Ti3SiC2-based contacts on 6H-SiC

F Goesmann, R Wenzel, R Schmid-FETZER

Thermal etching of GaAs (1 1 3) surfaces

S. M Scholz, C Setzer, K Jacobi, F Schabert, J. P Rabe

Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

YONGQIANG Ning, TIANMING Zhou, BAOLIN Zhang, HONG Jiang, SHUWEI Li, GUANG Yuan, YUAN Tian, YIXIN Jin

Adsorption of diborane and hydrogen selenide on porous alumina and silica

TADAHARU Watanabe, TAKASHI Suzuki, NOBUKAZU Kinomura

Electrical properties of the SnO2-based varistor

S. A Pianaro, P. R Bueno, P Olivi, E Longo, J.A Varela

Initial permeability studies on A13+ and Cr3+ substituted Ni–Zn ferrites

A. M Sankpal, S. V Kakatkar, N. D Chaudhari, R. S Patil, S. R Sawant, S. S Suryavanshi

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