Effect of copper doping on physical properties of nanocrystallized SnS zinc blend thin films grown by chemical bath deposition

SnS: Cu thin films have been successfully prepared on Pyrex substrates using low cost chemical bath deposition (CBD) technique with different copper doped concentration (y = [Cu]/[Sn] = 5%, 6%, 8%, 9% and 10%). The structure, the surface morphology and the optical properties of the SnS:Cu films were studied by X-ray diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer measurements, respectively. To obtain a thickness of the order of 780 ± 31 nm for absorber material in solar cell devices, a system of multilayer has been prepared. It is found that the physical properties of tin sulphide are affected by Cu-doped concentration. In fact, X-ray diffraction study showed that better cristallinity in zinc blend structure with preferential orientations (111)^ZB and (200)^ZB, was obtained for y equal to 6%. According to the AFM analysis we can remark that low average surface roughness (RMS)value of SnS(ZB) thin film obtained with Cu-doped concentrations equal to y = 6%, is about of 54 nm. Energy dispersive spectroscopy (EDS) showed the existence of Cu in the films. Optical analyses by means of transmission T(λ) and reflection R(λ) measurements show 1.51 eV as a band gap value of SnS:Cu(6%) which is nearly equal to the theoretical optimum value of 1.50 eV for efficient light absorption. On the other hand, Cu-doped tin sulphide exhibits a high absorption coefficient up to 2 × 10⁶ cm⁻¹, indicating that SnS:Cu can be used as an absorber thin layer in photovoltaic structure such as SnS:Cu/ZnS/SnO₂:F and SnS:Cu/In₂S₃/SnO₂:F, where ZnS and In₂S₃ are chemically deposited in a previous studies.