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Erschienen in:
01.09.2007
Low-temperature sintering and microwave dielectric properties of MgTiO3 ceramics
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2007
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Abstract
The effects of CuO–Bi2O3–V2O5 additions on the sintering temperature and the microwave dielectric properties of MgTiO3 ceramics were investigated systematically. The CuO–Bi2O3–V2O5 (CuBiV) addition significantly lowered the densification temperature of MgTiO3 ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO4 and Cu3(VO4)2 during sintering. The saturated dielectric constant (εr) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τf) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO4. MgTiO3 ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε r= 18.1, Qf = 20300 GHz and τf = −57 ppm/ °C.