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Erschienen in:
01.01.2009
Photoresponse of n-ZnO/p-Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior
Erschienen in: Journal of Materials Science: Materials in Electronics | Sonderheft 1/2009
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Abstract
A series of n-ZnO/p-Si thin film heterojunctions have been fabricated by a low cost sol–gel technique for different ZnO film thicknesses and the dark as well as photo current–voltage (I–V) characteristics have been investigated in details. The heterojunction with ZnO thickness of 0.46 μm shows the best diode characteristics in terms of rectification ratio, I
F/I
R = 5.7 × 103 at 5 V and reverse leakage current density, J
R = 7.6 × 10−5 A cm−2 at −5 V. From the photo I–V curves and wavelength dependent photocurrent of the heterojunctions, it is found that the junction with 0.46 μm ZnO thickness shows the highest sensitivity towards both UV and visible lights.