Anzeige
Erschienen in:
01.08.2009
Effect of air annealing on structural, optical, microscopic, electrical properties of cadmium selenide thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2009
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Cadmium selenide films have been deposited on glass substrate dip method. The resultant films were annealed upto 473 K temperature. The structural properties of cadmium selenide thin films have been investigated by X-ray diffraction techniques. The X-ray diffraction spectra showed that cadmium selenide thin films are polycrystalline. As deposited sample shows cubic phase whereas sample annealed at 473 K shows hexagonal phase. The optical properties showed direct band gap values were found to be in the region of 1.82–1.55 eV. The electrical studies shows conductivity increases with increase in annealing temperature. The optoelectric and structural data are discussed from the point of applications based on achieving high performance devices.