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Erschienen in:
01.05.2012
Band gap modified Al-doped Zn1−x Mg x O and Zn1−y Cd y O transparent conducting thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2012
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Abstract
Al-doped Zn1−x
Mg
x
O and Zn1−y
Cd
y
O thin films were prepared on glass substrates by sol–gel method. The codoping thin films showed preferential c-axis orientation, and the lattice constant c evaluated from the shift of the position of (002) peak displayed an increasing evolution from x = 8 at.% to y = 8 at.%, indicating a roughly statistical substitution of Mg2+ and Cd2+ for Zn2+ in their solid solution. The effects of narrowing and widening band gap (E
g) on conductivity of (Cd, Al) and (Mg, Al) codoped ZnO thin films were simultaneously investigated using transmission spectra and electrical measurements. The transmittances of these films are obviously decreased by vacuum annealing to 50–60%. However, the carrier concentration and Hall mobility both increase, and resistivity decreases with narrowing band gap in 1 at.% Al-doped Zn1−x
Mg
x
O and Zn1−y
Cd
y
O thin films from x = 8 at.% to y = 8 at.%. It is revealed that the conductivity of Al-doped ZnO thin films could be enhanced by this simple band gap modification.