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Journal of Materials Science: Materials in Electronics

Erschienen in:

01.02.2015

La-doping content effect on the optical and electrical properties of La-doped ZnO thin films

verfasst von: H.-Y. He, J.-F. Huang, J. Fei, J. Lu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2015

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Abstract

La-doped ZnO films with a series of La content were deposited by a chemical solution deposition and characterized by X-ray diffraction, field emission scanning electron microscopy, X-ray energy dispersion spectrometry, ultraviolet–visible and luminescent spectrophotometries, and electrical resistance measurement. The transmittance and electrical conductivity of the films increased and then decreased with increasing La content. The film with actual La content of 0.14 at.% showed a lowest optical absorbance, a widest bandgap of 4.08 eV, and a minimal resistance of 3.3 × 10⁻¹ Ω cm. The films showed a strong near band gap emission and some weak emissions related to intrinsic defects, implying near perfect crystal structure. The refractive index, extinction coefficient, optical conductivity, dielectric constant of the films were calculated with the transmittance and reflectance spectra.

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Titel: La-doping content effect on the optical and electrical properties of La-doped ZnO thin films
verfasst von: H.-Y. He
J.-F. Huang
J. Fei
J. Lu
Publikationsdatum: 01.02.2015
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 2/2015
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-014-2526-6

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