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Erschienen in: Journal of Materials Science: Materials in Electronics 6/2017

09.12.2016

Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering

verfasst von: H. Mahdhi, J. L. Gauffier, K. Djessas, Z. Ben Ayadi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2017

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Abstract

In this work, we studied gallium doped zinc oxide (ZnO:Ga) thin films deposited by rf-magnetron sputtering at room temperature using gallium doped nanocrystalline powder synthesized by sol–gel method. The effect of the thickness, on the physical properties of the GZO thin films was analyzed. The influence of the thickness, on structure, surface morphologies, chemical atomic composition, electrical and optical properties was investigated by XRD, SEM, TEM, AFM, Hall measurement and UV Vis–NIR spectrophotometer, respectively. X-ray diffraction (XRD) results revealed the polycrystalline nature of the films with hexagonal wurtzite structure having preferential orientation along [002] direction normal to the substrate. The lowest resistivity obtained from electrical studies was 10−4 Ω cm. Optical transmittance measurement results show a good transparency within the visible wavelength range for all the films.

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Metadaten
Titel
Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering
verfasst von
H. Mahdhi
J. L. Gauffier
K. Djessas
Z. Ben Ayadi
Publikationsdatum
09.12.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 6/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-6158-x

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