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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 9/2018

28.02.2018

Preparation of Cu2ZnSnS4 thin films with high carrier concentration and high carrier mobility by optimized annealing

verfasst von: Aiyue Tang, Zhilin Li, Feng Wang, Meiling Dou, Weiwu Mao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2018

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Abstract

The Cu2ZnSnS4 (CZTS) thin film with both high carrier concentration of 3.10 × 1020 cm−3 and high mobility of 19.8 cm2/V/s was prepared with optimization of heat treatment technique. In this work, different heat treatment techniques have been applied for the as-deposited CZTS by electrodeposition method. The as-deposited CZTS thin films have suitable Cu-poor and Zn-rich chemical composition, determining the high carrier concentration. The grain boundaries were designed for enhancement of carrier mobility of the CZTS thin films. Multi-step annealing refined the grains and increased the area of the grain boundaries in the films, resulting in the slight decrease of carrier mobility. Based on multi-step annealing, long and narrow particles and the preferential orientation of the grain boundaries formed by the decrease of Ar flow rate in 550 °C annealing. With such structure, the direct transportation of the holes along the vicinity of the grain boundaries increased carrier mobility.
Vorheriger Artikel Electrical and optical properties of pure and zirconium added dysprosium titanates
Nächster Artikel Impact of C5+ ion beam on Dy activated Sr2B5O9Cl TL phosphor

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Metadaten
Titel
Preparation of Cu2ZnSnS4 thin films with high carrier concentration and high carrier mobility by optimized annealing
verfasst von
Aiyue Tang
Zhilin Li
Feng Wang
Meiling Dou
Weiwu Mao
Publikationsdatum
28.02.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8753-5

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