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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 21/2018

23.08.2018

Bias voltage effect on the dielectric properties of organic–inorganic blend SiNWs elaborated via metal assisted chemical etching

verfasst von: Hamza Saidi, Walid Aloui, Abdelaziz Bouazizi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 21/2018

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Abstract

The electrical proprieties of poly (3-hexylthiophene): Silicon nanowires (P3HT: SiNWs) nanocomposite was investigated by impedance spectroscopy technique. The effect of bias voltage under and without illumination was discussed. Indeed, the imaginary part of the impedance shows a high relaxation frequency related to Maxwell–Wagner–Sillars (MWS) polarization. The relaxation time was found in the range of ms and it was shifted towards high frequency with increasing the bias voltage especially at 0.6 V At bias voltage equal to Vth and under illumination, the conductivity increases because the trapped charges acquire the necessary energy to escape from the interface and the hopping time found was reduced. This indicates a change of the conduction mechanism. The Cole–Cole diagram was excellently fitted through an equivalent circuit including a chemical capacitance Cµ, a contact electrical resistance Rs and recombination resistance Rp.
Vorheriger Artikel Luminous properties of skin–core structure new luminous fiber: SrAl2O4:Eu2+,Dy3+-PET/light conversion agent-PET
Nächster Artikel Construction of TiO2 NP@TiO2 NT double-layered structural photoanode to enhance photovoltaic performance of CdSe/CdS quantum dots sensitized solar cells

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Metadaten
Titel
Bias voltage effect on the dielectric properties of organic–inorganic blend SiNWs elaborated via metal assisted chemical etching
verfasst von
Hamza Saidi
Walid Aloui
Abdelaziz Bouazizi
Publikationsdatum
23.08.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 21/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9914-2

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