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Journal of Materials Science: Materials in Electronics

Erschienen in:

18.11.2019

Laser sintering method induced c-axis growth of Mg_0.2Zn_0.8O nano-film for ultraviolet photodetector

verfasst von: Hongbin Wang, Quansheng Liu, Xiaochun Wang, He Tang, Jiangbing Yan, Puxian Gao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2020

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Abstract

Ultraviolet (UV) photodetector was fabricated on Mg_0.2Zn_0.8O nano-rod film synthesized by laser sintering method. The X-ray diffraction pattern shows that Mg_0.2Zn_0.8O film grows along c-axis orientation with a wurtzite structure. Absorption edge locates at 351 nm and the band gap is determined to − 3.53 eV. The UV photodetector has a response peak at − 328 nm corresponding to a saturation responsivity of 0.196 A·W⁻¹ at 20 V bias. The UV/visible rejection ratio of the photodetector is close to 2 orders of magnitude. The super perfect photo-electronic performance of the detector illustrates that laser sintering method has a vital advantage to synthesized Mg_0.2Zn_0.8O nano-film for UV photodetector.

Vorheriger Artikel White-light/tunable emissions in single-phased BaLa2Si3O10:Eu3+, Bi3+ phosphor for the simultaneous applications in white light-emitting diodes and luminous cement

Nächster Artikel Interplay between the ferrimagnetic and ferroelectric phases on the large magnetoelectric coupling of xLi0.1Ni0.2Mn0.6Fe2.1O4–(1 − x)Bi0.8Dy0.2FeO3 composites

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Titel: Laser sintering method induced c-axis growth of Mg0.2Zn0.8O nano-film for ultraviolet photodetector
verfasst von: Hongbin Wang
Quansheng Liu
Xiaochun Wang
He Tang
Jiangbing Yan
Puxian Gao
Publikationsdatum: 18.11.2019
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 1/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-02555-8

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