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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 21/2020

15.09.2020

Improvement of dielectric properties of ZnO nanoparticles by Cu doping for tunable microwave devices

verfasst von: A. Selmi, A. Fkiri, J. Bouslimi, H. Besbes

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 21/2020

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Abstract

We report a facile chemical polyol method to synthesize Cu-doped ZnO nanoparticles with various levels of Cu. X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV–Visible diffuse reflectance spectroscopy techniques were used to analyze the structural and optical properties of Zn1−xCuxO nanoparticles. The crystallite size varies between 9.8 and 18.9 nm and decreased with the increase of Cu doping. The band energy gaps of pure and Cu-doped ZnO samples are in the range 2.5–3.1 eV. The dielectric properties, ac conductivity and impedance analysis of Zn1−xCuxO nanoparticles were systematically investigated. It was revealed that the doping of ZnO by Cu (with low Cu molar content) leads to obtain high dielectric constant and low tangent loss, which are very encouraging for microwave semiconductor devices.
Vorheriger Artikel Enhanced gas sensing properties for ethanol of Ag@ZnSnO3 nano-composites
Nächster Artikel Electric and ferroelectric properties of high-energy ball milling-assisted (1 − x) Sr0.2Ba0.8TiO3 + (x) Ni0.1Cu0.2Zn0.15Mg0.55Fe2O4 composite

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Metadaten
Titel
Improvement of dielectric properties of ZnO nanoparticles by Cu doping for tunable microwave devices
verfasst von
A. Selmi
A. Fkiri
J. Bouslimi
H. Besbes
Publikationsdatum
15.09.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 21/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04408-1

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