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Journal of Materials Science: Materials in Electronics

Erschienen in:

24.10.2021

Influences of selenization temperature on the properties of CZTSSe thin films and CZTSSe/Mo interfaces

verfasst von: Xiaoshuai Wu, Jiaxiong Xu, Chunan Zhuang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 24/2021

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Abstract

Cu₂ZnSn(S,Se)₄ (CZTSSe) thin films were prepared on molybdenum foil substrate by sol–gel method. The effects of selenization temperature on the properties of CZTSSe thin films and CZTSSe/Mo interfaces were studied. The phase structures, elemental compositions, and morphologies of CZTSSe thin films and the morphologies and electrical properties of CZTSSe/Mo interfaces were characterized by X-ray diffraction, Raman spectroscopy, energy-dispersive spectrometer, scanning electron microscopy, and current–voltage (I–V) curve measurement. The experimental results show that CZTSSe phase with trace of secondary phases can be grown on Mo foil substrate. The CZTSSe thin films have enlarged grain size and enhanced crystallinity with the increase of selenization temperature. A thick Mo(S,Se)₂ interface layer forms between the CZTSSe thin film and Mo foil substrate. The thickness of Mo(S,Se)₂ layer increases with the rise of selenization temperature. When the selenization temperature is 550 °C, the slope of the I–V characteristic curve of CZTSSe/Mo(S,Se)₂/Mo structure reaches the maximum. Therefore, the properties of back contact of CZTSSe thin films can be adjusted by selenization temperature.

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Titel: Influences of selenization temperature on the properties of CZTSSe thin films and CZTSSe/Mo interfaces
verfasst von: Xiaoshuai Wu
Jiaxiong Xu
Chunan Zhuang
Publikationsdatum: 24.10.2021
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 24/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-021-07217-2

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