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Erschienen in: Journal of Nanoparticle Research 10/2011

01.10.2011 | Research Paper

From Si nanowire to SiC nanotube

verfasst von: Laurence Latu-Romain, Maelig Ollivier, Arnaud Mantoux, Geoffroy Auvert, Odette Chaix-Pluchery, Eirini Sarigiannidou, Edwige Bano, Bernard Pelissier, Charbel Roukoss, Hervé Roussel, Florian Dhalluin, Bassem Salem, Nikoletta Jegenyes, Gabriel Ferro, Didier Chaussende, Thierry Baron

Erschienen in: Journal of Nanoparticle Research | Ausgabe 10/2011

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Abstract

Si nanowires (NWs), with diameters of about 800 nm and lengths of about 10 μm, previously synthesized by the VLS method with gold catalyst, were carburized at 1,100 °C under methane for conversion into SiC nanostructures. These experiments have shown that Si NWs have been transformed into SiC nanotubes (NTs) with approximately the same sizes. Nanotubes’ sidewall thickness varies from 20 to 150 nm depending on the NTs’ height. These SiC nanotubes are hexagonal in shape and polycrystalline. A model of growth based on the out-diffusion of Si through the SiC layer was proposed to explain the transformation from Si nanowires to SiC nanotubes. This model was completed with thermodynamic calculations on the Si–H2–CH4–O2 system and with results from complementary experiment using propane precursor. Routes for obtaining crystalline SiC NTs using this reaction are proposed.

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Metadaten
Titel
From Si nanowire to SiC nanotube
verfasst von
Laurence Latu-Romain
Maelig Ollivier
Arnaud Mantoux
Geoffroy Auvert
Odette Chaix-Pluchery
Eirini Sarigiannidou
Edwige Bano
Bernard Pelissier
Charbel Roukoss
Hervé Roussel
Florian Dhalluin
Bassem Salem
Nikoletta Jegenyes
Gabriel Ferro
Didier Chaussende
Thierry Baron
Publikationsdatum
01.10.2011
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 10/2011
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-011-0530-9

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