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22.03.2023 | Original Research Article

Effect of La₂O₃ Concentration on the Structural, Optical and Radiation-Shielding Behaviors of Titanate Borosilicate Glasses

verfasst von: Kh. S. Shaaban, B. M. Alotaibi, El Sayed Yousef

Erschienen in: Journal of Electronic Materials | Ausgabe 6/2023

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Abstract

In this investigation, many aspects of the structural, optical, and radiation-shielding effectiveness of glasses with the formula xLa₂O₃-(20 − x) TiO₂-23SiO₂-57B₂O₃ were assessed. The XRD patterns of the as-quenched sample demonstrated their glassy nature. With the addition of La₂O₃ content, the density, refractive index, ion concentration, and field strength increased significantly. Due to the interchanging dominance of bridging oxygen (BO) in the glass network, optical spectroscopy showed that the indirect optical band gap (E_opt) decreased from 3.79 eV to 3.41 eV as the La₂O₃ content increased, whereas the Urbach energy (E_u) increased from 0.281 eV to 0.311 eV. The structural modifications to the glass network were explored in relation to this change. The conversion of BO₃ into BO₄ tetrahedral units in the glasses was detected by FTIR spectra. Phy-X/PSD software was used to estimate the radiation-shielding characteristics of the glass sample for the 15 keV–15 MeV photon energy range. In comparison to other glasses, the current glass technology demonstrated superior gamma radiation- and neutron-shielding performance.

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Vorheriger Artikel Recent Advances in MXene Nanocomposites as Electromagnetic Radiation Absorbing Materials

Nächster Artikel Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications

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Titel: Effect of La2O3 Concentration on the Structural, Optical and Radiation-Shielding Behaviors of Titanate Borosilicate Glasses
verfasst von: Kh. S. Shaaban
B. M. Alotaibi
El Sayed Yousef
Publikationsdatum: 22.03.2023
Verlag: Springer US
Erschienen in: Journal of Electronic Materials / Ausgabe 6/2023
Print ISSN: 0361-5235
Elektronische ISSN: 1543-186X
DOI: https://doi.org/10.1007/s11664-023-10347-4

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A Technology for Bonding Cu Wires with Cu Pads: Structure and Electrical Fatigue Mechanism of Fine Micro-alloyed Cu Wires

Design of High Baliga’s Figure-of-Merit P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with P-AlGaN Field Plates

Li-Doped Layered Na1.0Cu0.22Fe0.30Mn0.48O2 Cathode with Enhanced Electrochemical Performance for Sodium-Ion Batteries