Chemical vapor deposition growth and transport properties of MoS₂–2H thin layers using molybdenum and sulfur as precursors

This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition (CVD) method, with molybdenum thin film and solid sulfur as precursors. And some improvements were made to reduce the amount of metastable MoS₂–3R. The morphology of the acquired MoS₂ layers, existing as triangular flakes or large-area continuous films, can be controlled by adjusting the synthesis time and reacting temperature. The characterization results show that the monolayer MoS₂ flakes reveal a (002)-oriented growth on SiO₂/Si substrates, and its crystalline domain size is approximately 30 μm, and the thickness is 0.65 nm. Since the synthesis of MoS₂–3R is restrained, the electronic transport properties of MoS₂ with different layers were investigated, revealing that those properties equal with those of MoS₂ samples prepared by exfoliation methods.