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2014 | Buch

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Silicon Carbide Nanostructures

Fabrication, Structure, and Properties

verfasst von: Jiyang Fan, Paul K. Chu

Verlag: Springer International Publishing

Buchreihe : Engineering Materials and Processes

Enthalten in: Springer Professional "Wirtschaft+Technik" , Springer Professional "Technik"

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Über dieses Buch

This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals.

SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications.

Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.

Inhaltsverzeichnis

Frontmatter

Chapter 1. Introduction

Abstract

The constituents of the earth are simple in that there are only about 118 elements that make up all the materials around us. However, our world is also very complex because almost unlimited types of matters (especially crystals and molecules) can be formed by combining these elements in different structural arrangements. In this respect, silicon carbide is unique as it has over two hundred crystalline forms and some polytypes of silicon carbide have been identified from presolar grains in meteorites. Silicon carbide is a wide bandgap semiconductor with excellent electronic characteristics that bode well for application to high-temperature, high-frequency, and high-power electronic devices. Moreover, silicon carbide is a superhard ceramic having a small density as well as superior thermal and mechanical properties.

Jiyang Fan, Paul K. Chu

Chapter 2. General Properties of Bulk SiC

Abstract

The fabrication and properties of silicon carbide crystals have been extensively studied because as a wide bandgap semiconductor, silicon carbide is ideal for electronic applications requiring high temperature, high frequency, and high power.

Jiyang Fan, Paul K. Chu

Chapter 3. Porous SiC

Abstract

There are three motives to investigate surface etching of silicon carbide (SiC). The first is the creation of patterns on SiC for electronic applications, and the second is that porous SiC obtained by etching yields stronger luminescence than the bulk materials. Last but not least, porous SiC has promising applications in sensing.

Jiyang Fan, Paul K. Chu

Chapter 4. Separate SiC Nanoparticles

Abstract

Silicon carbide nanoparticles generally refer to particles about 1–100 nm in size and single crystal in most cases. Silicon carbide nanocrystals smaller than 10 nm are also called SiC quantum dots; in this size regime, on account of the strong spatial confinement of the carriers, SiC nanocrystals exhibit obvious quantum size effects, especially the quantum confinement effect. As a result, the energy gap of the silicon carbide nanocrystals widens and luminescence shifts toward smaller wavelengths (blueshift) gradually as they become smaller. In addition, the quantum yield may be improved by several orders of magnitude relative to that of the bulk materials. Since the dimensions of the nanoparticles are very small, the surface strongly affects their properties. Silicon carbide is a compound semiconductor, and its surface has multiple bonding structures involving Si, C, O, H, and other atoms and so a variety of surface defects can form, consequently resulting in complex luminescence properties. In this chapter, the preparation methods, electronic structures, luminescence properties, and application of silicon carbide nanoparticles are discussed.

Ji-Yang Fan, Paul Kim-Ho Chu

Chapter 5. SiC Nanowires

Abstract

There have been a large amount of studies concerning the fabrication and properties of silicon carbide nanowires. In fact, much more knowledge has been learnt about SiC nanowires than other low-dimensional SiC nanostructures.

Jiyang Fan, Paul K. Chu

Chapter 6. SiC Nanotubes

Abstract

In most cases, the silicon carbide nanotubes have been fabricated with assistance of some templates. Unlike carbon nanotubes, the silicon carbide nanotubes contain two types of elements, silicon, and carbon; therefore, the structure of the SiC nanotube is basically different from that of the carbon nanotube.

Jiyang Fan, Paul K. Chu

Chapter 7. SiC Nanostructured Films

Abstract

Silicon carbide films have been intensively investigated concerning their fabrications and properties. In general, the thickness of the fabricated silicon carbide films can range from many micrometers to many nanometers. In this chapter, however, we shall focus on the nanostructured SiC films including the films with thickness on the nanoscale and the films comprising SiC nanocrystals.

Jiyang Fan, Paul K. Chu

Chapter 8. Biological Applications

Abstract

Silicon carbide is a well-known semiconductor with excellent biocompatibility and at least two factors contribute to this favorable characteristic. The first one is that the compound does not contain heavy metals which tend to be detrimental to the human body, and the second one is that neither silicon nor carbon causes deleterious effects such as cytotoxicity.

Jiyang Fan, Paul K. Chu

Titel: Silicon Carbide Nanostructures
verfasst von: Jiyang Fan
Paul K. Chu
Verlag: Springer International Publishing
Electronic ISBN: 978-3-319-08726-9
Print ISBN: 978-3-319-08725-2
DOI: https://doi.org/10.1007/978-3-319-08726-9

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