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Microsystem Technologies
Erschienen in: Microsystem Technologies 5/2015

01.05.2015 | Technical Paper

Laser welding of sapphire wafers using a thin-film fresnoite glass solder

verfasst von: Araceli de Pablos-Martín, M. Ebert, C. Patzig, M. Krause, M. Dyrba, P. Miclea, M. Lorenz, M. Grundmann, Th. Höche

Erschienen in: Microsystem Technologies | Ausgabe 5/2015

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Abstract

Two sapphire substrates are tightly bonded through a fresnoite-glass thin film, by irradiation with a 1,064 nm nanosecond laser. The composition of the glass solder at the bond interface changes, due to incorporation of Al from the upper substrate. The oxidic solder remains amorphous after laser irradiation, but after annealing (850 °C for 1 h) crystalline structures are observed in different morphologies, which are attributed not only to fresnoite, but also to Ba–Ti–Al–O phases, which lead to a strong luminescence of the laser irradiated region under UV excitation.
Vorheriger Artikel Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient
Nächster Artikel Design of compact and wide bandwidth SPDT with anti-stiction torsional RF MEMS series capacitive switch

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Metadaten
Titel
Laser welding of sapphire wafers using a thin-film fresnoite glass solder
verfasst von
Araceli de Pablos-Martín
M. Ebert
C. Patzig
M. Krause
M. Dyrba
P. Miclea
M. Lorenz
M. Grundmann
Th. Höche
Publikationsdatum
01.05.2015
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 5/2015
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-014-2398-y

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