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Erschienen in: Journal of Computational Electronics 2/2014

01.06.2014

1 Tb/s high quality factor NAND gate using quantum-dot semiconductor optical amplifiers in Mach–Zehnder interferometer

verfasst von: A. Kotb, K. E. Zoiros

Erschienen in: Journal of Computational Electronics | Ausgabe 2/2014

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Abstract

The performance of all-optical logic NAND gate realized by employing quantum-dot semiconductor optical amplifiers (QD-SOAs)-based Mach–Zehnder interferometers (MZI) is numerically simulated. Boolean NAND operation is achieved by a series combination of properly configured and driven QD-SOAs-MZIs. The theoretical study is carried out by taking into account the effect of amplified spontaneous emission. The dependence of the output \(Q\)-factor on data signals and QD-SOA parameters is investigated and discussed. The obtained results indicate that the NAND gate is capable of operating at 1 Tb/s with high output quality factor (\(Q\)-factor) provided that these parameters are properly optimized.

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Metadaten
Titel
1 Tb/s high quality factor NAND gate using quantum-dot semiconductor optical amplifiers in Mach–Zehnder interferometer
verfasst von
A. Kotb
K. E. Zoiros
Publikationsdatum
01.06.2014
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 2/2014
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-014-0567-y

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