Ausgabe 2/2014
Inhalt (26 Artikel)
Continuity equation based nonquasi-static charge model for independent double gate MOSFET
Neha Sharan, Santanu Mahapatra
Crosstalk analysis of CMOS buffer driven interconnects for ultra-low power applications
Rohit Dhiman, Rajeevan Chandel
Band structure effect on the electron current oscillation in ultra-scaled GaSb Schottky MOSFET: tight-binding approach
Zahra Ahangari, Morteza Fathipour
Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism
Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano
Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs
Aritra Acharyya, Suranjana Banerjee, J. P. Banerjee
A quantitative approach to study solid state phase coarsening in solder alloys using combined phase-field modeling and experimental observation
Mohammad Mahdi Tavakoli, Rouhollah Tavakoli, Parviz Davami, Hossein Aashuri
Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory
Pengxiao Sun, Ling Li, Nianduan Lu, Yingtao Li, Ming Wang, Hongwei Xie, Su Liu, Ming Liu
On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects
Guanyu Wang, Heming Zhang, Wei Wang, Jun Yuan, Zhen Wang
Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
P. Suveetha Dhanaselvam, N. B. Balamurugan
Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs
Gopi Krishna Saramekala, Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, Satyabrata Jit, Pramod Kumar Tiwari
Band-gap properties of 2D photonic crystal made by silica matrix doped with magnetic nanoparticles
Ahmed Kahlouche, Abdesselam Hocini, Djamel Khedrouche
An impact of bias and structure dependent L variation on the performance of GaN HEMTs based biosensor
Niketa Sharma, Diksha Joshi, Nidhi Chaturvedi
Simulation study on deep nanoscale short channel junctionless SOI FinFETs with triple-gate or double-gate structures
Xi Liu, Meile Wu, Xiaoshi Jin, Rongyan Chuai, Jong-Ho Lee
New approaches for modeling and simulation of quantum-dot cellular automata
Mohsen Hayati, Abbas Rezaei
A novel SOI MESFET by -shaped gate for improving the driving current
Hadi Shahnazarisani, Ali A. Orouji, Mohammad K. Anvarifard