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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 2/2014

01.06.2014

On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects

verfasst von: Guanyu Wang, Heming Zhang, Wei Wang, Jun Yuan, Zhen Wang

Erschienen in: Journal of Computational Electronics | Ausgabe 2/2014

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Abstract

Due to the large electron mobility gain cased by uniaxial stress along the [110] directions on (001) silicon substrate, in this paper, the impact of [110]/(001) uniaxial strain and quantum mechanical effects (QMEs) on the threshold voltage of strained-Silicon nMOSFETs is studied by developing a physically-based model. The impact of [110]/(001) stress on the band structure parameters such as density-of-state (DOS) in the conduction and valance band, band-gap and intrinsic carrier concentration is quantized first. Based on a modified threshold surface potential, the threshold voltage model is then proposed by solving the 2-D Poisson’s equation and also by taking short channel effects, quantum effects and other secondary effects into consideration. Our analytical results agree with both TCAD and experimental data. The threshold voltage with the stress along arbitrary orientation can be analyzed analogously. This model can also be used for the design of nanoscale strained-Si nMOSFETs.
Vorheriger Artikel Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory
Nächster Artikel Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET

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Metadaten
Titel
On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects
verfasst von
Guanyu Wang
Heming Zhang
Wei Wang
Jun Yuan
Zhen Wang
Publikationsdatum
01.06.2014
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 2/2014
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-013-0553-9

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