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Journal of Materials Science
Erschienen in: Journal of Materials Science 21/2014

01.11.2014

Secondary crystalline phases identification in Cu\(_2\)ZnSnSe\(_4\) thin films: contributions from Raman scattering and photoluminescence

verfasst von: Pedro M. P. Salomé, Paulo A. Fernandes, Joaquim P. Leitão, Marta G. Sousa, Jennifer P. Teixeira, António F. da Cunha

Erschienen in: Journal of Materials Science | Ausgabe 21/2014

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Abstract

In this work, we present the Raman peak positions of the quaternary pure selenide compound Cu\(_2\)ZnSnSe\(_4\) (CZTSe) and related secondary phases that were grown and studied under the same conditions. A vast discussion about the position of the X-ray diffraction (XRD) reflections of these compounds is presented. It is known that by using XRD only, CZTSe can be identified but nothing can be said about the presence of some secondary phases. Thin films of CZTSe, Cu\(_2\)SnSe\(_3\), ZnSe, SnSe, SnSe\(_2\), MoSe\(_2\) and a-Se were grown, which allowed their investigation by Raman spectroscopy (RS). Here we present all the Raman spectra of these phases and discuss the similarities with the spectra of CZTSe. The effective analysis depth for the common back-scattering geometry commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were estimated for different wavelength values. The observed asymmetric PL band on a CZTSe film is compatible with the presence of CZTSe single-phase and is discussed in the scope of the fluctuating potentials' model. The estimated bandgap energy is close to the values obtained from absorption measurements. In general, the phase identification of CZTSe benefits from the contributions of RS and PL along with the XRD discussion.
Vorheriger Artikel Toward p-type conduction in Cs-doped ZnO: an eco-friendly synthesis method
Nächster Artikel From normal ferroelectric transition to relaxor behavior in Aurivillius ferroelectric ceramics

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Metadaten
Titel
Secondary crystalline phases identification in CuZnSnSe thin films: contributions from Raman scattering and photoluminescence
verfasst von
Pedro M. P. Salomé
Paulo A. Fernandes
Joaquim P. Leitão
Marta G. Sousa
Jennifer P. Teixeira
António F. da Cunha
Publikationsdatum
01.11.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 21/2014
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-014-8446-2

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