Anzeige
Erschienen in:
01.03.2015
Effect of annealing temperature on dielectric and pyroelectric property of highly (111)-oriented (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 3/2015
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Highly (111)-oriented lanthanum modified lead zirconate titanate (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films with the thickness of 300 nm were fabricated by a sol–gel method. Electrical measurements were conducted on (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films. Well-saturated hysteresis loops were achieved with an applied voltage of 19 V. Dielectric constant and dielectric loss as a function of frequency for (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films annealed at 670 °C were measured. Dc bias field dependence of dielectric constant and dielectric loss were conducted at room temperature; the dielectric tunability of (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin film annealed at 670 °C was 20.3 %. The pyroelectric coefficient of films was measured by a dynamic technique. The pyroelectric coefficients of (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films annealed at 570, 620 and 670 °C were 208, 244 and 192 μC/m2 K, respectively. It was found that the pyroelectric property was highly depended on the annealing temperature.