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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 2/2016

02.11.2015

Dielectric, ferroelectric and conduction behavior of tungsten modified SrBi4Ti4O15 ceramic

verfasst von: P. Nayak, T. Badapanda, S. Panigrahi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2016

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Abstract

The effect of Tungsten (W) modification of the structural, dielectric, ferroelectric and conduction behavior of SrBi4Ti4O15 ceramic with general formula SrBi4−2x/3Ti4−xWxO15 (x = 0.0, 0.02, 0.04, 0.06, 0.08, 0.1) was investigated. The ceramic samples were synthesized by the conventional solid-state reaction method. X-ray diffraction (XRD) and Raman scattering techniques have been employed to characterize the structural property which demonstrated that all the compositions were single phase four layered crystalline structure, involving slight reduction of lattice distortion with an increase in W doping level. The temperature dependent dielectric study revealed that the dielectric constant and the transition temperature decreases with increase in W content. The temperature dependent Ac conductivity was studied and the activation energy was calculated for all the compositions. The ferroelectric and piezoelectric properties enhanced with Tungsten content, which may be attributed to the decrease of oxygen vacancies. Among all the compositions, x = 0.1 showed improved ferroelectric and piezoelectric properties.
Vorheriger Artikel Structural, dielectric and magnetic characteristics of Bi(Ni0.25Ti0.25Fe0.50)O3 ceramics
Nächster Artikel Electrospinning synthesis, characterization and luminescence properties of La2W2O9: Eu3+ nanofibers

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Metadaten
Titel
Dielectric, ferroelectric and conduction behavior of tungsten modified SrBi4Ti4O15 ceramic
verfasst von
P. Nayak
T. Badapanda
S. Panigrahi
Publikationsdatum
02.11.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 2/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3878-2

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