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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 8/2018

05.02.2018

Band alignment of In2Se3 multilayers/ZnO heterojunction measured by X-ray photoelectron spectroscopy

verfasst von: H. Zhang, S. S. Yan, S. T. Li, S. C. Su

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2018

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Abstract

X-ray photoelectron spectroscopy has been used to measure the band alignment the In2Se3 multilayers (MLs)/ZnO heterojunction. The MLs In2Se3 was fabricated by pulse laser deposition (PLD) on ZnO/Al2O3 substrates. The valence-band offset (ΔEv) of In2Se3 MLs/ZnO is determined to be 2.19 ± 0.1 eV, and the conduction-band offset (ΔEc) is deduced to be 0.96 ± 0.1 eV, indicating that In2Se3-MLs/ZnO heterojunction has a type-II band alignment.
Vorheriger Artikel Highly stable Si-N-doped BaMgAl10O17:Eu phosphor prepared by EuSi2O2N2 incorporation: structure and luminescence properties
Nächster Artikel Synthesis and characterization polymer nanocomposite of PANI/TiO2(np)-Fe+3 for microwave application

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Metadaten
Titel
Band alignment of In2Se3 multilayers/ZnO heterojunction measured by X-ray photoelectron spectroscopy
verfasst von
H. Zhang
S. S. Yan
S. T. Li
S. C. Su
Publikationsdatum
05.02.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 8/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8624-0

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