The effects of preparation temperature on the main electrical parameters of Al/TiO₂/p-Si (MIS) structures by using sol–gel method

In this study, the forward bias current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Al/TiO₂/p-Si (MIS) structures derived using the sol–gel method have been investigated and compared at various preparation temperatures. Experimental results show that the preparation temperatures strongly affect the electrical characteristics, such as ideality factor (n), zero-bias barrier height (\( \phi_{b0} \)), series resistance (R _s ) and interface states (N _ss ). The MIS structures show non-ideal behavior of I–V characteristics with an n varying between 2.17 and 4.61. We have found that the \( \phi_{b0} \) and R _s increase as the n decrease with increasing preparation temperature. The energy distribution profile of N _ss of the Al/TiO₂/p-Si (MIS) structures was obtained from the forward bias I–V characteristics by taking into account both the bias dependence of the effective barrier height (\( \phi_{e} \)) and R _s for various preparation temperatures. The values of N _ss increase from the midgap towards the top of valance band for various preparation temperatures.