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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 10/2018

01.10.2018

Transition from strong-field sequential to nonsequential double ionization at near-infrared wavelengths and low intensities

verfasst von: Kai Liu, Meiyan Qin, Qianguang Li, Qing Liao

Erschienen in: Optical and Quantum Electronics | Ausgabe 10/2018

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Abstract

Within a quantum-mechanical model, we investigate strong-field double ionization of a model helium atom by near-infrared, linearly polarized laser pulses at intensities far below the recollision threshold. The quantum simulations show a clear mechanism change from sequential to nonsequential double ionization (NSDI) as the laser intensity increases. For NSDI, the two-electron correlated momentum distribution exhibits a strong final-state Coulomb repulsion effect for high-energy photoelectrons, but absent for low-energy photoelectrons. This repulsion effect is ascribed to field double ionization from doubly-excited states populated by recollision of the first ionized electron when it returns to the parent ion. Such recollision-induced excited states are absent at ultraviolet wavelengths due to the very low returning kinetic energies, resulting to the absence of final-state repulsion effect in NSDI.
Vorheriger Artikel Self-healing properties of asymmetric Bessel beams
Nächster Artikel Application of entropies to the study of the decoherence of magnetopolaron in 0-D nanosystem

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Metadaten
Titel
Transition from strong-field sequential to nonsequential double ionization at near-infrared wavelengths and low intensities
verfasst von
Kai Liu
Meiyan Qin
Qianguang Li
Qing Liao
Publikationsdatum
01.10.2018
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 10/2018
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-018-1620-z

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