1 Introduction
2 Test Method
3 Test Materials
Test material | Form | Nominal thermal conductivity (W/mK) | Ref. |
---|---|---|---|
AISI 52100 (steel) | MTM ball | 46.6, 46 | |
AISI 52100 (steel) | MTM disc | 46.6 | [19] |
Tungsten carbide (WC) | MTM ball | 110, 80–100, 40, 84 | |
Tungsten carbide (WC) | MTM disc | 110, 80–100, 40, 84 | |
Zirconia (ZrO2) | MTM ball | 2.0, 1.9 (stabilised) | |
Silicon nitride (Si3N4) | MTM ball | 30 (1% MgO) | [23] |
Single crystal sapphire | MTM disc | 23, 24, 42 | |
Silicon (Si) | undoped wafer | 145 | [29] |
Germanium (Ge) | undoped wafer | 55 | [29] |
4 Results
Test material | Thermal conductivity (W/mK) | Specific heat × 103 kJ/m3K | |
---|---|---|---|
AISI 52100 (steel) | Ball | 21 ± 1 | 3.44 ± 0.17 |
AISI 52100 (steel) | Disc | 21 ± 1 | 4.14 ± 0.20 |
Tungsten carbide (WC) | Ball | 58 ± 2 | 1.46 ± 0.44 |
Tungsten carbide (WC) | Disc | 65 ± 5 | 2.50 ± 0.34 |
Zirconia (ZrO2) | Ball | 2.4 ± 0.5 | 2.40 ± 0.14 |
Silicon nitride (Si3N4) | Ball | 18.2 ± 0.7 | 1.63 ± 0.08 |
Single crystal sapphire | K┴ 30.8 ± 2.5 K ║ 35.0 ± 2.5 | ||
Silicon (Si) | Undoped wafer | 141 ± 4 | 1.61 ± 0.04 |
Germanium (Ge) | Undoped wafer | 55 ± 2 | 1.75 ± 0.05 |
5 Discussion
5.1 Thermal Conductivity Measurements
5.2 Thermal Conductivity of AISI 52100 Steel
Disc hardness | Thermal conductivity (W/mK) | Density (kg/m3) | Specific heat (kJ/kgK) | Specific heat × 103 kJ/m3K |
---|---|---|---|---|
196 VPN | 41 ± 1 | 7723 | 0.446 | 3.445 |
772 VPN | 26.1 ± 0.2 | 7704 | 0.446 | 3.436 |