Anzeige
Erschienen in:
01.02.2019 | MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS
Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides
Erschienen in: Semiconductors | Ausgabe 2/2019
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
The results of investigating the thermoelectric properties of the bulk р-type oxyselenides Bi1 –xPrxCuSeO (x = 0, 0.04, 0.08) and Bi0.96La0.04CuSeO obtained by the solid-state reaction technique are presented. The temperature dependences of the thermopower, electrical resistivity, and thermal conductivity are measured at temperatures from room temperature to 800 K. Over the whole temperature range, a decrease in the electrical resistivity and thermopower is observed with increasing substitution level, while the thermal conductivity is almost unaffected by the substitution of rare-earth elements for bismuth. Despite the nominal valence of Bi, La, and Pr being the same, the replacement of bismuth by rare-earth ions leads to an increase in the charge-carrier concentration, which may be caused by a difference in the electronic configurations of ions, resulting in a shift of the Fermi level to the valence band.