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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 3/2018

26.10.2017

Low temperature sintering and microwave dielectric properties of Zn3Mo2O9 ceramic

verfasst von: Chunchun Li, Wangxi Wen, Huaicheng Xiang, Liang Fang, Yihua Sun

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 3/2018

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Abstract

Crystal structure and dielectric properties of Zn3Mo2O9 ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn3Mo2O9 crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε r ) of 8.7, a quality factor (Q × f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ f ) of around − 79 ppm/°C. With 5 wt% B2O3 addition, the sintering temperature of Zn3Mo2O9 ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε r  = 11.8, Q × f = 20,000 GHz, and τ f = − 79.5 ppm/°C were achieved.
Vorheriger Artikel Properties of nickel doped In2S3 thin films deposited by spray pyrolysis technique
Nächster Artikel Enhanced photoluminescence of CoWO4 in CoWO4/PbWO4 nanocomposites

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Metadaten
Titel
Low temperature sintering and microwave dielectric properties of Zn3Mo2O9 ceramic
verfasst von
Chunchun Li
Wangxi Wen
Huaicheng Xiang
Liang Fang
Yihua Sun
Publikationsdatum
26.10.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 3/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-8100-2

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