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Journal of Materials Science
Erschienen in: Journal of Materials Science 27/2020

17.06.2020 | Boundaries

Methods for Gibbs triple junction excess determination: Ti segregation in \(\hbox {CoSi}_2\) thin film

verfasst von: Hannes Zschiesche, Ahmed Charai, Claude Alfonso, Dominique Mangelinck

Erschienen in: Journal of Materials Science | Ausgabe 27/2020

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Abstract

Methods are presented determining the Gibbs triple junction excess (\({\varGamma }^{\text{TJ}}\)) of solute segregation in polycrystalline materials from single atom counting in 3D volumes. One method bases on cumulative profile analysis, while two further methods use radial integration of solute atoms. The methods are demonstrated and compared on simulated model volumes which include three grain boundaries joining together at a triple junction with set values for Gibbs grain boundary and triple junction excess. An experimental technique that provides 3D volumes with single atom detection and spatial resolution close to atomic scale is atom probe tomography. An atom probe tomography volume of a \(\hbox {CoSi}_2\) thin film that contains three grain boundaries and a triple junction has been acquired. Ti segregation is found qualitatively at the grain boundaries and triple junction. The quantification of the Ti excess at the investigated \(\hbox {CoSi}_2\) triple junction reveals for the three introduced methods positive Gibbs triple junction excess values. It demonstrates that there is an excess of Ti at \(\hbox {CoSi}_2\) triple junctions and provides opportunities for its quantification.
Vorheriger Artikel Preparation and electrochemical performance of LiNi0.5Mn1.5O4 spinels with different particle sizes and surface orientations as cathode materials for lithium-ion battery
Nächster Artikel Metal–organic frameworks based on β-cyclodextrin: design and selective entrapment of non-steroidal anti-inflammatory drugs

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Metadaten
Titel
Methods for Gibbs triple junction excess determination: Ti segregation in thin film
verfasst von
Hannes Zschiesche
Ahmed Charai
Claude Alfonso
Dominique Mangelinck
Publikationsdatum
17.06.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 27/2020
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-020-04856-4

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