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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2013

01.10.2013

Microstructure and energy-storage performance of BaO–B2O3–SiO2 glass added (Na0.5Bi0.5)TiO3 thick films

verfasst von: Le Zhang, Xihong Hao, Liwen Zhang, Jichun Yang, Shengli An

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2013

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Abstract

(Na0.5Bi0.5)TiO3 lead-free thick films were successfully fabricated on alumina substrates via a screen printing method with 0–10 wt% BaO–B2O3–SiO2 glass addition. Microstructure, dielectric properties and energy-storage performance of the thick films were systematically investigated. The results show that the denser thick films were obtained by addition of glass. Thus, the breakdown strength, the energy-storage density and efficiency were greatly improved. The maximum recoverable energy-storage density and efficiency of sample with 1 wt% glass were 2.0 J/cm3 and 44.1 %, respectively. Meanwhile, a low leakage current density of about 10−6 A/cm2 was obtained for all samples at 100 kV/cm.
Vorheriger Artikel Porous nano-structured VO2 films with different surfactants: synthesis mechanisms, characterization, and applications
Nächster Artikel Microstructure, dielectric and piezoelectric properties of La-modified Bi0.5(Na0.84K0.16)0.5TiO3 lead-free ceramics

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Metadaten
Titel
Microstructure and energy-storage performance of BaO–B2O3–SiO2 glass added (Na0.5Bi0.5)TiO3 thick films
verfasst von
Le Zhang
Xihong Hao
Liwen Zhang
Jichun Yang
Shengli An
Publikationsdatum
01.10.2013
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2013
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1325-9

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