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Tribology Letters

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01.03.2024 | Original Paper

Molecular Dynamics Study of Nano-Grinding Behavior for Silicon Wafer Workpieces with Nanoscale Roughness Under Diamond Abrasive Rotation and Translation

verfasst von: Bing Wu, Yunyun Sun, Shijing Wu

Erschienen in: Tribology Letters | Ausgabe 1/2024

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Abstract

This study aims to analyze the nano-grinding behavior of silicon wafer workpieces with nanoscale roughness by molecular dynamics simulations. The nano-grinding process of silicon wafer workpieces with varying root-mean-square roughness under different grinding depths is simulated, considering synchronous rotation and translation of the diamond abrasive. The material removal mechanism, thermodynamic properties and mechanical responses are revealed. The findings demonstrate that the material removal in the nano-grinding process can be influenced by surface roughness and grinding depth, leading to its classification into compression, ploughing and cutting regimes. Moreover, reducing the grinding depth and surface roughness also reduces temperature, von Mises stress and grinding force, thus mitigating surface damage to silicon wafer workpieces. However, a minimal initial root-mean-square roughness may result in reduced surface smoothness of silicon wafer workpieces after a single grinding.

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Huang, H., Li, X., et al.: Science and art of ductile grinding of brittle solids. Int. J. Mach. Tools Manuf. 161, 103675 (2021). https://doi.org/10.1016/j.ijmachtools.2020.103675CrossRef

Liu, Z., Lin, B., et al.: Study on the effect of laser-assisted machining on tool wear based on molecular dynamics simulation. Diam. Relat. Mater. 109, 108022 (2020). https://doi.org/10.1016/j.diamond.2020.108022ADSCrossRef

Huang, N., Zhou, P., Goel, S.: Microscopic stress analysis of nanoscratch induced sub-surface defects in a single-crystal silicon wafer. Precis. Eng. 82, 290–303 (2023). https://doi.org/10.1016/j.precisioneng.2023.04.006CrossRef

Zhao, B., Wu, W., et al.: Highly dynamic tempered in-mold thermocompression bonding of microfluidic chips: Process characteristics and bonding performances. J. Mater. Res. Technol. 24, 639–652 (2023). https://doi.org/10.1016/j.jmrt.2023.03.040CrossRef

Zhang, Y., Kang, R., et al.: Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding. Int. J. Mech. Sci. 257, 108544 (2023). https://doi.org/10.1016/j.ijmecsci.2023.108544CrossRef

Ma, Y., Dong, B., Lee, C.: Progress of infrared guided-wave nanophotonic sensors and devices. Nano Convergence. 7, 12 (2020). https://doi.org/10.1186/s40580-020-00222-xCrossRefPubMedPubMedCentral

Chaudhri, M.M.: Indentation hardness of diamond single crystals, nanopolycrystal, and nanotwinned diamonds: A critical review. Diam. Relat. Mater. 109, 108076 (2020). https://doi.org/10.1016/j.diamond.2020.108076ADSCrossRef

Ye, G., Zhang, P., Zhang, J., Zhang, Y., Huang, X.: Study on nanometer cutting mechanism of single crystal silicon at different temperatures. J. Manuf. Process. 93, 275–286 (2023). https://doi.org/10.1016/j.jmapro.2023.03.026CrossRef

Mohammadi, H., Ravindra, D., et al.: Experimental work on micro laser-assisted diamond turning of silicon (111). J. Manuf. Process. 19, 125–128 (2015). https://doi.org/10.1016/j.jmapro.2015.06.007CrossRef

10.

Lin, Z., Hu, H., et al.: High-efficiency chemical-mechanical magnetorheological finishing for ultra-smooth single-crystal silicon. Nanomaterials. 13, 398 (2023). https://doi.org/10.3390/nano13030398CrossRefPubMedPubMedCentral

11.

Liu, C.Y., Fu, W.E., et al.: Nanoscale surface roughness characterization by full field polarized light-scattering. Opt. Lasers Eng. 49, 145–151 (2011). https://doi.org/10.1016/j.optlaseng.2010.08.004ADSCrossRef

12.

Pei, Z.J., Billingsley, S.R., Miura, S.: Grinding induced subsurface cracks in silicon wafers. Int. J. Mach. Tools Manuf. 39, 1103–1116 (1999). https://doi.org/10.1016/S0890-6955(98)00079-0CrossRef

13.

Yan, J., Sakai, S., et al.: Recovery of microstructure and surface topography of grinding-damaged silicon wafers by nanosecond-pulsed laser irradiation. Semicond. Sci. Technol. 24, 105018 (2009). https://doi.org/10.1088/0268-1242/24/10/105018ADSCrossRef

14.

Li, Y., Lu, J., Xu, X.: Phase transformation of monocrystalline silicon induced by polishing with diamond abrasives. IEEE Trans. Semicond. Manuf. 28, 153–159 (2015). https://doi.org/10.1109/TSM.2015.2398511CrossRef

15.

Li, H.N., Yu, T.B., et al.: Analytical modeling of ground surface topography in monocrystalline silicon grinding considering the ductile-regime effect. Archives of Civil and Mechanical Engineering. 17, 880–893 (2017). https://doi.org/10.1016/j.acme.2017.03.010CrossRef

16.

Wang, T., Liu, H., et al.: Three-dimensional modeling and theoretical investigation of grinding marks on the surface in small ball-end diamond wheel grinding. Int. J. Mech. Sci. 173, 105467 (2020). https://doi.org/10.1016/j.ijmecsci.2020.105467CrossRef

17.

Liu, H., Yang, T., et al.: Iterative method for obtaining nonuniform grinding-induced residual stress distribution of silicon wafers based on global deformation. Mater. Sci. Semiconduct. Process. 150, 106971 (2022). https://doi.org/10.1016/j.mssp.2022.106971CrossRef

18.

Sun, J., Qin, F., et al.: A predictive model of grinding force in silicon wafer self-rotating grinding. Int. J. Mach. Tools Manuf. 109, 74–86 (2016). https://doi.org/10.1016/j.ijmachtools.2016.07.009CrossRef

19.

Yao, W., Kang, R., et al.: Effect of grinding residual height on the surface shape of ground wafer. J. Mater. Process. Technol. 299, 117390 (2022). https://doi.org/10.1016/j.jmatprotec.2021.117390CrossRef

20.

Schreijäg, S., Kaufmann, D., et al.: Size and microstructural effects in the mechanical response of α-Fe and low alloyed steel. Acta Mater. 97, 94–104 (2015). https://doi.org/10.1016/j.actamat.2015.06.038ADSCrossRef

21.

Zhu, X., Chen, X., et al.: An empirical equation for prediction of silicon wafer deformation. Mater. Res. Express. 4, 065904 (2017). https://doi.org/10.1088/2053-1591/aa71edADSCrossRef

22.

Zhang, X.H., Pei, Z.J., Fisher, G.R.: A grinding-based manufacturing method for silicon wafers: Generation mechanisms of central dimples on ground wafers. Int. J. Mach. Tools Manuf. 46, 397–403 (2006). https://doi.org/10.1016/j.ijmachtools.2005.05.008CrossRef

23.

Gao, S., Dong, Z., et al.: Warping of silicon wafers subjected to back-grinding process. Precis. Eng. 40, 87–93 (2015). https://doi.org/10.1016/j.precisioneng.2014.10.009CrossRef

24.

Luan, B., Robbins, M.O.: The breakdown of continuum models for mechanical contacts. Nature. 435, 929–932 (2005). https://doi.org/10.1038/nature03700ADSCrossRefPubMed

25.

Luan, B., Robbins, M.O.: Contact of single asperities with varying adhesion: Comparing continuum mechanics to atomistic simulations. Phys. Rev. E. 74, 026111 (2006). https://doi.org/10.1103/PhysRevE.74.026111ADSCrossRef

26.

Li, P., Guo, X., et al.: Effects of grinding speeds on the subsurface damage of single crystal silicon based on molecular dynamics simulations. Appl. Surf. Sci. 554, 149668 (2021). https://doi.org/10.1016/j.apsusc.2021.149668CrossRef

27.

Zhao, P., Zhao, B., et al.: Nano-grinding process of single-crystal silicon using molecular dynamics simulation: Nano-grinding parameters effect. Mater. Sci. Semiconduct. Process. 143, 106531 (2022). https://doi.org/10.1016/j.mssp.2022.106531CrossRef

28.

Zhao, B., Zhao, P., et al.: Investigation on surface generation mechanism of single-crystal silicon in grinding: Surface crystal orientation effect. Mater. Today Commun. 34, 105125 (2023). https://doi.org/10.1016/j.mtcomm.2022.105125CrossRef

29.

Bi, G., Li, Y., Lai, M., Fang, F.: Mechanism of polishing lutetium oxide single crystals with polyhedral diamond abrasive grains based on molecular dynamics simulation. Appl. Surf. Sci. 616, 156549 (2023). https://doi.org/10.1016/j.apsusc.2023.156549CrossRef

30.

Dai, H., Yue, H., Hu, Y., Li, P.: The removal mechanism of monocrystalline Si in the process of double diamond abrasive polishing by molecular dynamics simulation. Tribol. Lett. 69, 66 (2021). https://doi.org/10.1007/s11249-021-01445-7CrossRef

31.

Zhou, Y., Huang, Y., Li, J., Zhu, F.: The effect of contact types on SiC polishing process. Mater. Sci. Semiconduct. Process. 147, 106709 (2022). https://doi.org/10.1016/j.mssp.2022.106709CrossRef

32.

Persson, B.N.J., Albohr, O., Tartaglino, U., Volokitin, A.I., Tosatti, E.: On the nature of surface roughness with application to contact mechanics, sealing, rubber friction and adhesion. J. Phys.: Condens. Matter. 17, 1–62 (2005). https://doi.org/10.1088/0953-8984/17/1/R01ADSCrossRef

33.

Jacobs, T.D.B., Junge, T., Pastewka, L.: Quantitative characterization of surface topography using spectral analysis. Surf. Topogr: Metrol. And Prop. 5, 013001 (2017). https://doi.org/10.1088/2051-672X/aa51f8ADSCrossRef

34.

Wu, B., Sun, Y.: Normal contact analysis between two self-affine fractal surfaces at the nanoscale by molecular dynamics simulations. Tribol. Lett. 71, 30 (2023). https://doi.org/10.1007/s11249-023-01705-8CrossRef

35.

Li, J., Fang, Q., et al.: Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations. Appl. Surf. Sci. 324, 464–474 (2015). https://doi.org/10.1016/j.apsusc.2014.10.149ADSCrossRef

36.

Zhang, L., Tanaka, H.: Towards a deeper understanding of wear and friction on the atomic scale-a molecular dynamics analysis. Wear. 211, 44–53 (1997). https://doi.org/10.1016/S0043-1648(97)00073-2CrossRef

37.

Cai, M.B., Li, X.P., Rahman, M.: Characteristics of dynamic hard particles in nanoscale ductile mode cutting of monocrystalline silicon with diamond tools in relation to tool groove wear. Wear. 263, 1459–1466 (2007). https://doi.org/10.1016/j.wear.2006.11.030CrossRef

38.

Cai, M.B., Li, X.P., Rahman, M.: Study of the mechanism of nanoscale ductile mode cutting of silicon using molecular dynamics simulation. Int. J. Mach. Tools Manuf. 47, 75–80 (2007). https://doi.org/10.1016/j.ijmachtools.2006.02.016CrossRef

39.

Jackson, M.J., Davis, C.J., et al.: High-speed grinding with CBN grinding wheels–applications and future technology. J. Mater. Process. Technol. 110, 78–88 (2001). https://doi.org/10.1016/S0924-0136(00)00869-4CrossRef

40.

Choudhary, A., Paul, S.: Surface generation in high-speed grinding of brittle and tough ceramics. Ceram. Int. 47, 30546–30562 (2021). https://doi.org/10.1016/j.ceramint.2021.07.233CrossRef

41.

Zhang, J., Shang, X., et al.: Towards understanding the crack suppression mechanism in brittle materials with high grinding speed at different temperatures. Int. J. Mach. Tools Manuf. 193, 104088 (2023). https://doi.org/10.1016/j.ijmachtools.2023.104088CrossRef

42.

Nguyen, V.T., Fang, T.H.: Material removal and wear mechanism in abrasive polishing of SiO₂/SiC using molecular dynamics. Ceram. Int. 46, 21578–21595 (2020). https://doi.org/10.1016/j.ceramint.2020.05.263CrossRef

43.

Dai, H., Zhang, F., Chen, J.: A study of ultraprecision mechanical polishing of single-crystal silicon with laser nano-structured diamond abrasive by molecular dynamics simulation. Int. J. Mech. Sci. 157–158, 254–266 (2019). https://doi.org/10.1016/j.ijmecsci.2019.04.027CrossRef

44.

Stukowski, A.: Visualization and analysis of atomistic simulation data with OVITO-the Open visualization Tool. Modelling and Simulation. Mater. Sci. Eng. 18, 015012 (2010). https://doi.org/10.1088/0965-0393/18/1/015012CrossRef

45.

Goel, S., Luo, X., Reuben, R.L.: Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process. Tribol. Int. 57, 272–281 (2013). https://doi.org/10.1016/j.triboint.2012.06.027CrossRef

46.

Packham, D.E.: Surface energy, surface topography and adhesion. Int. J. Adhes. Adhes. 23, 437–448 (2003). https://doi.org/10.1016/S0143-7496(03)00068-XCrossRef

47.

Wang, X., Zhang, Q.: Role of surface roughness in the wettability, surface energy and flotation kinetics of calcite. Powder Technol. 371, 55–63 (2020). https://doi.org/10.1016/j.powtec.2020.05.081CrossRef

48.

Zhou, Y., Huang, Y., et al.: The effects of abrasive moving speed and motion mode on the thinning mechanism of SiC in three-body contact. Phys. Scr. 98, 115403 (2023). https://doi.org/10.1088/1402-4896/acfc6dADSCrossRef

49.

Yin, Z., Zhu, P., et al.: Atomic simulations of deformation mechanism of 3 C-SiC polishing process with a rolling abrasive. Tribol. Lett. 69, 146 (2021). https://doi.org/10.1007/s11249-021-01526-7CrossRef

50.

Wang, G., Feng, Z., et al.: Molecular dynamics simulation of nano-polishing of single crystal silicon on non-continuous surface. Mater. Sci. Semiconduct. Process. 118, 105168 (2020). https://doi.org/10.1016/j.mssp.2020.105168CrossRef

51.

Dai, H., Hu, Y., et al.: Molecular dynamics simulation of ultra-precision machining 3 C-SiC assisted by ion implantation. J. Manuf. Process. 69, 398–411 (2021). https://doi.org/10.1016/j.jmapro.2021.07.055CrossRef

Titel: Molecular Dynamics Study of Nano-Grinding Behavior for Silicon Wafer Workpieces with Nanoscale Roughness Under Diamond Abrasive Rotation and Translation
verfasst von: Bing Wu
Yunyun Sun
Shijing Wu
Publikationsdatum: 01.03.2024
Verlag: Springer US
Erschienen in: Tribology Letters / Ausgabe 1/2024
Print ISSN: 1023-8883
Elektronische ISSN: 1573-2711
DOI: https://doi.org/10.1007/s11249-024-01832-w

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