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Erschienen in:
2007 | OriginalPaper | Buchkapitel
Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism
verfasst von : T. Maruizumi, J. Ushio, Y. Shiraki
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
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To clarify the microscopic mechanism of Negative-Bias Temperature Instability (NBTI), which is one of serious reliability issues in CMOS technology, the transfer reaction of the positive fixed charge at the Si/SiO
2
interface accompanied by hydrogen migration was investigated using the ab initio molecular orbital method. Comparing the activation energies, we determined the most likely reaction path. We found that the reaction path can be stabilized more by migration of an electrically neutral H atom from a Si substrate to a positively charged O atom than by migration of a proton from a Si substrate to an electrically neutral O atom. The calculated Mulliken atomic charges and atomic spin densities also supported our conclusion.