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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 1/2017

25.08.2016

Optical properties and UV photoresponse of Na2x Zn1−x O thin film

verfasst von: Jianguo Lv, Wenhao Wang, Min Zhao, Yuebing Cheng, Weili Zhu, Gang He, Miao Zhang, Zhaoqi Sun, Xiaoshuang Chen

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2017

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Abstract

Na2x Zn1−x O thin films were successfully synthesized on quartz glass substrates by sol–gel method. The effect of Na content on the microstructure, optical properties and UV photoresponse of the thin films was investigated using X-ray diffraction, optical absorbance, photoluminescence, and conductivity measurements. The results indicate that the Na0.04Zn0.98O thin film exhibits the strongest preferential c-axis orientation with a polycrystalline hexagonal wurtzite structure and has the largest optical band gap. An obvious decrease in crystal size has been observed with the increasing of Na content. A weak ultraviolet emission band at about 381 nm and a strong visible emission band have been observed in the photoluminescence spectra. The Na0.04Zn0.98O thin film has the shortest growth and decay time (45 and 18 s, respectively) and the largest photoresponse. The results indicate that the photoresponse can be effectively improved by means of moderate Na doping.
Vorheriger Artikel Preparation and characterization of persistent luminescence of regenerated cellulose fiber
Nächster Artikel The effect of ZnO, Fe3O4 and graphene oxide nanostructures on the microwave absorbing properties of polystyrene composites

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Metadaten
Titel
Optical properties and UV photoresponse of Na2x Zn1−x O thin film
verfasst von
Jianguo Lv
Wenhao Wang
Min Zhao
Yuebing Cheng
Weili Zhu
Gang He
Miao Zhang
Zhaoqi Sun
Xiaoshuang Chen
Publikationsdatum
25.08.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5623-x

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