Skip to main content
Erschienen in: International Journal of Parallel Programming 4/2018

10.10.2017

Partial-PreSET: Enhancing Lifetime of PCM-Based Main Memory with Fine-Grained SET Operations

verfasst von: Yang Shi, Yanmin Zhu, Linpeng Huang

Erschienen in: International Journal of Parallel Programming | Ausgabe 4/2018

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Phase change memory (PCM) is one of promising technology to replace DRAM with its attractive features such as zero leakage power and high scalability. In PCM, a SET operation needs much more time than a RESET operation. A typical write request concurrently writes 64 bytes to a PCM memory line. Therefore, write latency is mainly determined by SET operations. Previously, PreSET has been proposed to improve PCM performance by exploiting asymmetry in write time. A PreSET operation pro-actively SETs all the bits in the memory line before a dirty cache line is written to PCM . Later, when a write request is processed, only RESET operations are actually performed. Consequently, PreSET reduces write latency and improves system performance. However, such PreSET operations are conducted only at a very coarse-grained level, which reduces the endurance of PCM. Through empirical study, we observe that in most applications the number of dirty words in a dirty line is actually quite limited. If we only SET those dirty words, instead of the whole cache line, we would significantly extend the lifetime of PCM while still achieving desirable performance. Inspired by this observation, we propose a scheme called Partial-PreSET which balances performance and endurance of PCM. The core idea of this scheme is to SET those dirty bits of a cache line in a fine-grained fashion. Our experiments show that the proposed Partial-PreSET scheme significantly improves the average lifetime of PCM system, up to 2.79X, while incurring only 2% system performance loss, compared with the state-of-the-art scheme (i.e., PreSET).

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat Lefurgy, C., Rajamani, K., Rawson, F., Felter, W., Kistler, M., Keller, T.W.: Energy management for commercial servers. Computer 36(12), 39–48 (2003)CrossRef Lefurgy, C., Rajamani, K., Rawson, F., Felter, W., Kistler, M., Keller, T.W.: Energy management for commercial servers. Computer 36(12), 39–48 (2003)CrossRef
2.
Zurück zum Zitat Qureshi, M., Gurumurthi, S., Rajendran, B.: Phase change memory: from devices to systems. Synth. Lect. Comput. Archit. 6(4), 134 (2011) Qureshi, M., Gurumurthi, S., Rajendran, B.: Phase change memory: from devices to systems. Synth. Lect. Comput. Archit. 6(4), 134 (2011)
3.
Zurück zum Zitat Qureshi, M.K., Franceschini, M.M., Jagmohan, A., Lastras, L.A.: Preset: improving performance of phase change memories by exploiting asymmetry in write times. ACM SIGARCH Comput. Archit. News 40(3), 380–391 (2012)CrossRef Qureshi, M.K., Franceschini, M.M., Jagmohan, A., Lastras, L.A.: Preset: improving performance of phase change memories by exploiting asymmetry in write times. ACM SIGARCH Comput. Archit. News 40(3), 380–391 (2012)CrossRef
4.
Zurück zum Zitat Lee, K.-J., Cho, B.-H., Cho, W.-Y., Kang, S., Choi, B.-G., Oh, H.-R., Lee, C.-S., Kim, H.-J., Park, J.-M., Wang, Q., et al.: A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput. IEEE J. Solid State Circuits 43(1), 150–162 (2008)CrossRef Lee, K.-J., Cho, B.-H., Cho, W.-Y., Kang, S., Choi, B.-G., Oh, H.-R., Lee, C.-S., Kim, H.-J., Park, J.-M., Wang, Q., et al.: A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput. IEEE J. Solid State Circuits 43(1), 150–162 (2008)CrossRef
5.
Zurück zum Zitat Mohammad, A., Kandemir, M.T., Sivasubramaniam, A., Das, C.R.: Boosting access parallelism to PCM-based main memory. In: International Symposium on Computer Architecture, pp. 695–706 (2016) Mohammad, A., Kandemir, M.T., Sivasubramaniam, A., Das, C.R.: Boosting access parallelism to PCM-based main memory. In: International Symposium on Computer Architecture, pp. 695–706 (2016)
6.
Zurück zum Zitat Zhou, P., Zhao, B., Yang, J., Zhang, Y.: A durable and energy efficient main memory using phase change memory technology. In: International Symposium on Computer, Architecture, pp. 14–23 (2009) Zhou, P., Zhao, B., Yang, J., Zhang, Y.: A durable and energy efficient main memory using phase change memory technology. In: International Symposium on Computer, Architecture, pp. 14–23 (2009)
7.
Zurück zum Zitat Qureshi, M.K., Franceschini, M.M., Lastras-Montano, L.A.: Improving read performance of phase change memories via write cancellation and write pausing. In: IEEE International Symposium on High Performance Computer, Architecture, pp. 1–11 (2010) Qureshi, M.K., Franceschini, M.M., Lastras-Montano, L.A.: Improving read performance of phase change memories via write cancellation and write pausing. In: IEEE International Symposium on High Performance Computer, Architecture, pp. 1–11 (2010)
8.
Zurück zum Zitat Patel, A., Afram, F., Chen, S., Ghose, K.: MARSS: a full system simulator for multicore x86 CPUs. In: Design Automation Conference, DAC 2011, San Diego, California, USA, June, pp. 1050–1055 (2011) Patel, A., Afram, F., Chen, S., Ghose, K.: MARSS: a full system simulator for multicore x86 CPUs. In: Design Automation Conference, DAC 2011, San Diego, California, USA, June, pp. 1050–1055 (2011)
9.
Zurück zum Zitat Qureshi, M.K., Srinivasan, V., Rivers, J.A.: Scalable high performance main memory system using phase-change memory technology. In: International Symposium on Computer Architecture, pp. 24–33 (2009) Qureshi, M.K., Srinivasan, V., Rivers, J.A.: Scalable high performance main memory system using phase-change memory technology. In: International Symposium on Computer Architecture, pp. 24–33 (2009)
10.
Zurück zum Zitat Seong, N.H., Woo, D.H., Lee, H.-H.S.: Security refresh: prevent malicious wear-out and increase durability for phase-change memory with dynamically randomized address mapping. ACM SIGARCH Comput. Archit. News 38(3), 383–394 (2010)CrossRef Seong, N.H., Woo, D.H., Lee, H.-H.S.: Security refresh: prevent malicious wear-out and increase durability for phase-change memory with dynamically randomized address mapping. ACM SIGARCH Comput. Archit. News 38(3), 383–394 (2010)CrossRef
11.
Zurück zum Zitat Qureshi, M.K., Karidis, J., Franceschini, M., Srinivasan, V.: Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling. In: IEEE/ACM International Symposium on Microarchitecture, pp. 14–23 (2009) Qureshi, M.K., Karidis, J., Franceschini, M., Srinivasan, V.: Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling. In: IEEE/ACM International Symposium on Microarchitecture, pp. 14–23 (2009)
12.
Zurück zum Zitat Zhao, M., Xue, Y., Hu, J., Yang, C., Liu, T., Jia, Z., Xue, C.J.: State asymmetry driven state remapping in phase change memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst 36(1), 27–40 (2016)CrossRef Zhao, M., Xue, Y., Hu, J., Yang, C., Liu, T., Jia, Z., Xue, C.J.: State asymmetry driven state remapping in phase change memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst 36(1), 27–40 (2016)CrossRef
13.
Zurück zum Zitat Zhao, M., Shi, L., Yang, C., Xue, C.J.: Leveling to the last mile: near-zero-cost bit level wear leveling for PCM-based main memory. In: IEEE International Conference on Computer Design, pp. 16–21 (2014) Zhao, M., Shi, L., Yang, C., Xue, C.J.: Leveling to the last mile: near-zero-cost bit level wear leveling for PCM-based main memory. In: IEEE International Conference on Computer Design, pp. 16–21 (2014)
14.
Zurück zum Zitat Shi, Y., Zhu, Y., Huang, L.: Partial-preset: enhancing lifetime of PCM-based main memory with fine-grained set operations. In: International Conference on Network and Parallel Computing (2017) Shi, Y., Zhu, Y., Huang, L.: Partial-preset: enhancing lifetime of PCM-based main memory with fine-grained set operations. In: International Conference on Network and Parallel Computing (2017)
Metadaten
Titel
Partial-PreSET: Enhancing Lifetime of PCM-Based Main Memory with Fine-Grained SET Operations
verfasst von
Yang Shi
Yanmin Zhu
Linpeng Huang
Publikationsdatum
10.10.2017
Verlag
Springer US
Erschienen in
International Journal of Parallel Programming / Ausgabe 4/2018
Print ISSN: 0885-7458
Elektronische ISSN: 1573-7640
DOI
https://doi.org/10.1007/s10766-017-0527-9

Weitere Artikel der Ausgabe 4/2018

International Journal of Parallel Programming 4/2018 Zur Ausgabe

Premium Partner