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2024 | OriginalPaper | Buchkapitel

Performance Estimation of Multilayer-Stack-Channel IGZO-Based Thin-Film Transistor in Double-Gate Mode

verfasst von : Shashi Kant Dargar, Abha Dargar, Shilpi Birla, V. Hima Deepthi

Erschienen in: Flexible Electronics for Electric Vehicles

Verlag: Springer Nature Singapore

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Abstract

Several additional amorphous oxide materials have been employed as promising materials in Thin-Film Transistor (TFT) applications due to their good transparency, resilience, and cost-effectiveness. However, due to low attainable mobility and low turn-on currents, the single-layer channel a-IGZO TFT is insufficient. To improve the switching characteristics of IGZO TFTs, this research suggests a multi-stack channel configuration. In this study, the source of performance enhancement in double-gate TFTs, compared to the Single-Gate (SG) multi-layer stack channel structure, has been described. Low mobility and Subthreshold Swing (SS) degradations occur in SG multi-layer stack channel TFTs. The field-effect mobility (FE) of SG TFTs (14.70 cm²/V-s) increases to 24.92 cm²/V-s when the gate voltage (V_G = 10 V) is increased. From the channel’s top to the gate-insulator interface (1.3 × 10¹⁸ per cubic cm), the concentration of electrons in SG TFT declines gradually (1.86 × 10¹⁸ per cubic cm). The current density in the DG structure of the multi-stack channel drops from 7.5 A per cm² to 2.5 A per cm², leading to accumulation in the a-IGZO bulk and a large drain current. When the results from the proposed structure were compared to current results, they were found to be extremely encouraging and promising for future displays.

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Vorheriges Kapitel Trends and Developments of Electric Vehicles: Current State and Future Perspectives

Nächstes Kapitel Towards Space Sensor Network and Internet of Things: Merging CubeSats with IoT

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Titel: Performance Estimation of Multilayer-Stack-Channel IGZO-Based Thin-Film Transistor in Double-Gate Mode
verfasst von: Shashi Kant Dargar
Abha Dargar
Shilpi Birla
V. Hima Deepthi
Verlag: Springer Nature Singapore
Buch: Flexible Electronics for Electric Vehicles
Print ISBN: 978-981-9947-94-2

Electronic ISBN: 978-981-9947-95-9

Copyright-Jahr: 2024
DOI: https://doi.org/10.1007/978-981-99-4795-9_8