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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 3/2015

01.03.2015

Photochemical doping of graphene oxide thin films with nitrogen for electrical conductivity improvement

verfasst von: Xinyu Li, Tao Tang, Ming Li, Xiancong He

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 3/2015

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Abstract

By using simple irradiation of graphene oxide (GO) thin films in NH3 atmosphere, nitrogen-doped GO (NGO) thin films had been successfully synthesized. It is notable that the reduction and nitrogen doping of graphene are simultaneously achieved by irradiation, and the nitrogen content of NGO could reach as high as 12.34 at.% within only 5 min. With further prolonging the irradiation time to 120 min, it could reach a very high value of 17.21 at.%. The electrical properties of NGO thin films were investigated. The results showed that, compared to irradiation of GO films in Ar atmosphere, irradiation in NH3 atmosphere is much more effective to improve the electrical conductivity. It may attribute to the nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.
Vorheriger Artikel Investigation on optical, structural and electrical properties of annealed AZO/Al/AZO multilayer structures deposited by DC magnetron sputtering
Nächster Artikel Synthesis of ZnO nanocrystal by thermal decomposition for inverted polymer solar cell application

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Metadaten
Titel
Photochemical doping of graphene oxide thin films with nitrogen for electrical conductivity improvement
verfasst von
Xinyu Li
Tao Tang
Ming Li
Xiancong He
Publikationsdatum
01.03.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 3/2015
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2606-7

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